Post Hard Breakdown Conduction in MOS Capacitors With Silicon and Aluminum Oxide as Dielectric

I-V curves as a function of voltage and temperature of MOS capacitors with silicon oxide and aluminum oxide after dielectric breakdown are presented. A different temperature behavior in accumulation is observed. The samples with aluminum oxide show an entirely positive temperature dependence, wherea...

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Veröffentlicht in:	IEEE electron device letters 2008-04, Vol.29 (4), p.366-368
Hauptverfasser:	Avellan, A., Jakschik, S., Tippelt, B., Kudelka, S., Krautschneider, W.
Format:	Artikel
Sprache:	eng
Schlagworte:	Aluminum oxide Analytical models Applied sciences Breakdown Breakdown voltage Capacitors Charge distribution Compound structure devices Current Dielectric breakdown Dielectric, amorphous and glass solid devices Electric breakdown Electronics Exact sciences and technology Interfaces Metal oxide semiconductors MOS capacitors MOS devices P-n junctions Schottky barriers Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Silicon Silicon oxides Temperature dependence
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