Post Hard Breakdown Conduction in MOS Capacitors With Silicon and Aluminum Oxide as Dielectric
I-V curves as a function of voltage and temperature of MOS capacitors with silicon oxide and aluminum oxide after dielectric breakdown are presented. A different temperature behavior in accumulation is observed. The samples with aluminum oxide show an entirely positive temperature dependence, wherea...
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| Veröffentlicht in: | IEEE electron device letters 2008-04, Vol.29 (4), p.366-368 |
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| container_end_page | 368 |
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| container_issue | 4 |
| container_start_page | 366 |
| container_title | IEEE electron device letters |
| container_volume | 29 |
| creator | Avellan, A. Jakschik, S. Tippelt, B. Kudelka, S. Krautschneider, W. |
| description | I-V curves as a function of voltage and temperature of MOS capacitors with silicon oxide and aluminum oxide after dielectric breakdown are presented. A different temperature behavior in accumulation is observed. The samples with aluminum oxide show an entirely positive temperature dependence, whereas the samples with silicon oxide have a crossover of the temperature dependent curves. This difference of the two sample types is attributed to the charge distribution according to the material of the breakdown spot, silicon for the case of silicon oxide, and aluminum for aluminum oxide. Thus, in the first case, a p-n junction is formed while a Schottky contact is created in the latter case. Atlas simulations and TEM analysis are presented that confirm this hypothesis. |
| doi_str_mv | 10.1109/LED.2008.917627 |
| format | Article |
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A different temperature behavior in accumulation is observed. The samples with aluminum oxide show an entirely positive temperature dependence, whereas the samples with silicon oxide have a crossover of the temperature dependent curves. This difference of the two sample types is attributed to the charge distribution according to the material of the breakdown spot, silicon for the case of silicon oxide, and aluminum for aluminum oxide. Thus, in the first case, a p-n junction is formed while a Schottky contact is created in the latter case. Atlas simulations and TEM analysis are presented that confirm this hypothesis.</description><identifier>ISSN: 0741-3106</identifier><identifier>EISSN: 1558-0563</identifier><identifier>DOI: 10.1109/LED.2008.917627</identifier><identifier>CODEN: EDLEDZ</identifier><language>eng</language><publisher>New York, NY: IEEE</publisher><subject>Aluminum oxide ; Analytical models ; Applied sciences ; Breakdown ; Breakdown voltage ; Capacitors ; Charge distribution ; Compound structure devices ; Current ; Dielectric breakdown ; Dielectric, amorphous and glass solid devices ; Electric breakdown ; Electronics ; Exact sciences and technology ; Interfaces ; Metal oxide semiconductors ; MOS capacitors ; MOS devices ; P-n junctions ; Schottky barriers ; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices ; Silicon ; Silicon oxides ; Temperature dependence</subject><ispartof>IEEE electron device letters, 2008-04, Vol.29 (4), p.366-368</ispartof><rights>2008 INIST-CNRS</rights><rights>Copyright The Institute of Electrical and Electronics Engineers, Inc. (IEEE) 2008</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c382t-d92f098d3adfc90533e8144cd582f054339336f12ea0b7c3720887833f4789b13</citedby><cites>FETCH-LOGICAL-c382t-d92f098d3adfc90533e8144cd582f054339336f12ea0b7c3720887833f4789b13</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/4459060$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>314,780,784,796,27915,27916,54749</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/4459060$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=20192087$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>Avellan, A.</creatorcontrib><creatorcontrib>Jakschik, S.</creatorcontrib><creatorcontrib>Tippelt, B.</creatorcontrib><creatorcontrib>Kudelka, S.</creatorcontrib><creatorcontrib>Krautschneider, W.</creatorcontrib><title>Post Hard Breakdown Conduction in MOS Capacitors With Silicon and Aluminum Oxide as Dielectric</title><title>IEEE electron device letters</title><addtitle>LED</addtitle><description>I-V curves as a function of voltage and temperature of MOS capacitors with silicon oxide and aluminum oxide after dielectric breakdown are presented. A different temperature behavior in accumulation is observed. The samples with aluminum oxide show an entirely positive temperature dependence, whereas the samples with silicon oxide have a crossover of the temperature dependent curves. This difference of the two sample types is attributed to the charge distribution according to the material of the breakdown spot, silicon for the case of silicon oxide, and aluminum for aluminum oxide. Thus, in the first case, a p-n junction is formed while a Schottky contact is created in the latter case. Atlas simulations and TEM analysis are presented that confirm this hypothesis.</description><subject>Aluminum oxide</subject><subject>Analytical models</subject><subject>Applied sciences</subject><subject>Breakdown</subject><subject>Breakdown voltage</subject><subject>Capacitors</subject><subject>Charge distribution</subject><subject>Compound structure devices</subject><subject>Current</subject><subject>Dielectric breakdown</subject><subject>Dielectric, amorphous and glass solid devices</subject><subject>Electric breakdown</subject><subject>Electronics</subject><subject>Exact sciences and technology</subject><subject>Interfaces</subject><subject>Metal oxide semiconductors</subject><subject>MOS capacitors</subject><subject>MOS devices</subject><subject>P-n junctions</subject><subject>Schottky barriers</subject><subject>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</subject><subject>Silicon</subject><subject>Silicon oxides</subject><subject>Temperature dependence</subject><issn>0741-3106</issn><issn>1558-0563</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2008</creationdate><recordtype>article</recordtype><sourceid>RIE</sourceid><recordid>eNp9kb1vFDEUxFcIJI5ATUFjIRHR7OXZz7u2y3D5Qjp0SElEh-XYXuGwZx_2rgL_PT5dlIKC6hXzm9EbTdO8pbCkFNTJ-vxsyQDkUlHRM_GsWdCuky10PT5vFiA4bZFC_7J5Vco9AOVc8EXz_WsqE7ky2ZFP2ZufLj1EskrRzXYKKZIQyZfNNVmZnbFhSrmQb2H6Qa7DGGyVTXTkdJy3Ic5bsvkdnCemkLPgR2-nHOzr5sVgxuLfPN6j5vbi_GZ11a43l59Xp-vWomRT6xQbQEmHxg1WQYfoZX3Quk5WoeOICrEfKPMG7oRFwUBKIREHLqS6o3jUHB9ydzn9mn2Z9DYU68fRRJ_mopF3TDDsKvjxvyDtBUXktOcVff8Pep_mHGsNrShjHDiHCp0cIJtTKdkPepfD1uQ_moLe76LrLnq_iz7sUh0fHmNNsWYcsok2lCcbA6pquz337sAF7_2TzHmnoAf8CwV0kto</recordid><startdate>20080401</startdate><enddate>20080401</enddate><creator>Avellan, A.</creator><creator>Jakschik, S.</creator><creator>Tippelt, B.</creator><creator>Kudelka, S.</creator><creator>Krautschneider, W.</creator><general>IEEE</general><general>Institute of Electrical and Electronics Engineers</general><general>The Institute of Electrical and Electronics Engineers, Inc. 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Solid state devices</topic><topic>Silicon</topic><topic>Silicon oxides</topic><topic>Temperature dependence</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Avellan, A.</creatorcontrib><creatorcontrib>Jakschik, S.</creatorcontrib><creatorcontrib>Tippelt, B.</creatorcontrib><creatorcontrib>Kudelka, S.</creatorcontrib><creatorcontrib>Krautschneider, W.</creatorcontrib><collection>IEEE All-Society Periodicals Package (ASPP) 2005-present</collection><collection>IEEE All-Society Periodicals Package (ASPP) 1998-Present</collection><collection>IEEE Electronic Library (IEL)</collection><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>Aluminium Industry Abstracts</collection><collection>ANTE: Abstracts in New Technology & Engineering</collection><collection>Engineering Research Database</collection><collection>Materials Research Database</collection><jtitle>IEEE electron device letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Avellan, A.</au><au>Jakschik, S.</au><au>Tippelt, B.</au><au>Kudelka, S.</au><au>Krautschneider, W.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Post Hard Breakdown Conduction in MOS Capacitors With Silicon and Aluminum Oxide as Dielectric</atitle><jtitle>IEEE electron device letters</jtitle><stitle>LED</stitle><date>2008-04-01</date><risdate>2008</risdate><volume>29</volume><issue>4</issue><spage>366</spage><epage>368</epage><pages>366-368</pages><issn>0741-3106</issn><eissn>1558-0563</eissn><coden>EDLEDZ</coden><abstract>I-V curves as a function of voltage and temperature of MOS capacitors with silicon oxide and aluminum oxide after dielectric breakdown are presented. A different temperature behavior in accumulation is observed. The samples with aluminum oxide show an entirely positive temperature dependence, whereas the samples with silicon oxide have a crossover of the temperature dependent curves. This difference of the two sample types is attributed to the charge distribution according to the material of the breakdown spot, silicon for the case of silicon oxide, and aluminum for aluminum oxide. Thus, in the first case, a p-n junction is formed while a Schottky contact is created in the latter case. Atlas simulations and TEM analysis are presented that confirm this hypothesis.</abstract><cop>New York, NY</cop><pub>IEEE</pub><doi>10.1109/LED.2008.917627</doi><tpages>3</tpages></addata></record> |
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| ispartof | IEEE electron device letters, 2008-04, Vol.29 (4), p.366-368 |
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| source | IEEE Electronic Library (IEL) |
| subjects | Aluminum oxide Analytical models Applied sciences Breakdown Breakdown voltage Capacitors Charge distribution Compound structure devices Current Dielectric breakdown Dielectric, amorphous and glass solid devices Electric breakdown Electronics Exact sciences and technology Interfaces Metal oxide semiconductors MOS capacitors MOS devices P-n junctions Schottky barriers Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Silicon Silicon oxides Temperature dependence |
| title | Post Hard Breakdown Conduction in MOS Capacitors With Silicon and Aluminum Oxide as Dielectric |
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