Shallow-Trench-Isolation (STI)-Induced Mechanical-Stress-Related Kink-Effect Behaviors of 40-nm PD SOI NMOS Device

This brief reports the shallow-trench-isolation (STI)-induced mechanical-stress-related kink-effect behaviors of the 40-nm PD silicon on insulator (SOI) NMOS device. As verified by the experimentally measured data and the 2-D simulation results, the kink-effect behaviors occur at a higher in the sat...

Ausführliche Beschreibung

Bibliographische Detailangaben

Veröffentlicht in:	IEEE transactions on electron devices 2008-06, Vol.55 (6), p.1558-1562
Hauptverfasser:	Su, V.C., Kuo, J.B., Lin, I.S., Guan-Shyan Lin, Chen, D.C., Chune-Sin Yeh, Cheng-Tzung Tsai, Ma, M.
Format:	Artikel
Sprache:	eng
Schlagworte:	Applied sciences CMOSFET Devices Electronics Exact sciences and technology Insulators Saturation Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Silicon silicon on insulator (SOI) technology Simulation Stresses Transistors
Online-Zugang:	Volltext bestellen
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!