Local crystal structural modifications in pulsed laser deposited high- k dielectric thin films on silicon and germanium

The thin film growth conditions are correlated with the local structures formed in Hf x Zr 1− x O 2 ( x=0.0–1.0) high- k dielectric thin films on Si and Ge substrates during deposition. Pulsed laser deposition (PLD) technique has been used in the synthesis of the thin films with systematic variation...

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Veröffentlicht in:	Materials Science in Semiconductor Processing 2008-10, Vol.11 (5), p.245-249
Hauptverfasser:	Alper Sahiner, Mehmet, Woicik, Joseph C., Kurp, Timothy, Serfass, Jeffrey, Aranguren, Marc
Format:	Artikel
Sprache:	eng
Schlagworte:	ABSORPTION SPECTROSCOPY Applied sciences ATOMS BNL Condensed matter: electronic structure, electrical, magnetic, and optical properties Constant-composition solid-solid phase transformations: polymorphic, massive, and order-disorder Correlation Cross-disciplinary physics: materials science rheology DEPOSITION DIELECTRIC MATERIALS Dielectric thin films Dielectrics, piezoelectrics, and ferroelectrics and their properties Electronics Exact sciences and technology Geremanium GERMANIUM Hafnium Hafnium oxide High- k dielectrics Laser deposition LASERS MATERIALS SCIENCE Methods of deposition of films and coatings film growth and epitaxy Microelectronic fabrication (materials and surfaces technology) MODIFICATIONS national synchrotron light source NSLS OXIDES PARTICLE ACCELERATORS Phase diagrams and microstructures developed by solidification and solid-solid phase transformations PHASE TRANSFORMATIONS Phases Physics Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Semiconductors SILICON Silicon substrates SUBSTRATES SYMMETRY SYNTHESIS TARGETS THIN FILMS
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