Transition of metallic and insulating Ti sub-oxides in bipolar resistive switching TiOx/TiOy frameworks due to oxygen vacancy drifts
Bilayer TiO x (oxygen rich, region 1)/TiO y (oxygen poor, region 2) homojunctions were evaluated as resistive switching elements where the TiO x layers were designed with various oxygen contents. Depending on the oxygen ion content, controllable memory windows were observed by changing the off-state...
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| Veröffentlicht in: | Applied physics. A, Materials science & processing Materials science & processing, 2011-03, Vol.102 (4), p.1009-1013 |
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| container_title | Applied physics. A, Materials science & processing |
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| creator | Bae, Yoon Cheol Lee, Ah Rahm Kwak, June Sik Im, Hyunsik Do, Young Ho Hong, Jin Pyo |
| description | Bilayer TiO
x
(oxygen rich, region 1)/TiO
y
(oxygen poor, region 2) homojunctions were evaluated as resistive switching elements where the TiO
x
layers were designed with various oxygen contents. Depending on the oxygen ion content, controllable memory windows were observed by changing the off-state (high-resistance state), while the on-state (low resistance) was left with very little change. The cause of the variable memory windows in resistive switching phenomena appears to be the increasing amounts of movable oxygen ions between the TiO
x
and TiO
y
layers. In addition, the X-ray photoelectron spectroscopy measurements of the initial, low resistance, and high-resistance states in the homojunctions demonstrated the possible change of metallic and insulating Ti sub-oxide phases at the interfaces and oxygen ion rich region due to the migration of oxygen ions. |
| doi_str_mv | 10.1007/s00339-011-6289-0 |
| format | Article |
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x
(oxygen rich, region 1)/TiO
y
(oxygen poor, region 2) homojunctions were evaluated as resistive switching elements where the TiO
x
layers were designed with various oxygen contents. Depending on the oxygen ion content, controllable memory windows were observed by changing the off-state (high-resistance state), while the on-state (low resistance) was left with very little change. The cause of the variable memory windows in resistive switching phenomena appears to be the increasing amounts of movable oxygen ions between the TiO
x
and TiO
y
layers. In addition, the X-ray photoelectron spectroscopy measurements of the initial, low resistance, and high-resistance states in the homojunctions demonstrated the possible change of metallic and insulating Ti sub-oxide phases at the interfaces and oxygen ion rich region due to the migration of oxygen ions.</description><identifier>ISSN: 0947-8396</identifier><identifier>EISSN: 1432-0630</identifier><identifier>DOI: 10.1007/s00339-011-6289-0</identifier><language>eng</language><publisher>Berlin/Heidelberg: Springer-Verlag</publisher><subject>Characterization and Evaluation of Materials ; Condensed Matter Physics ; Homojunctions ; Low resistance ; Machines ; Manufacturing ; Migration ; Nanotechnology ; Optical and Electronic Materials ; Oxygen ions ; Phases ; Physics ; Physics and Astronomy ; Processes ; Surfaces and Interfaces ; Switching ; Thin Films ; Titanium ; Titanium dioxide</subject><ispartof>Applied physics. A, Materials science & processing, 2011-03, Vol.102 (4), p.1009-1013</ispartof><rights>Springer-Verlag 2011</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://link.springer.com/content/pdf/10.1007/s00339-011-6289-0$$EPDF$$P50$$Gspringer$$H</linktopdf><linktohtml>$$Uhttps://link.springer.com/10.1007/s00339-011-6289-0$$EHTML$$P50$$Gspringer$$H</linktohtml><link.rule.ids>314,780,784,27924,27925,41488,42557,51319</link.rule.ids></links><search><creatorcontrib>Bae, Yoon Cheol</creatorcontrib><creatorcontrib>Lee, Ah Rahm</creatorcontrib><creatorcontrib>Kwak, June Sik</creatorcontrib><creatorcontrib>Im, Hyunsik</creatorcontrib><creatorcontrib>Do, Young Ho</creatorcontrib><creatorcontrib>Hong, Jin Pyo</creatorcontrib><title>Transition of metallic and insulating Ti sub-oxides in bipolar resistive switching TiOx/TiOy frameworks due to oxygen vacancy drifts</title><title>Applied physics. A, Materials science & processing</title><addtitle>Appl. Phys. A</addtitle><description>Bilayer TiO
x
(oxygen rich, region 1)/TiO
y
(oxygen poor, region 2) homojunctions were evaluated as resistive switching elements where the TiO
x
layers were designed with various oxygen contents. Depending on the oxygen ion content, controllable memory windows were observed by changing the off-state (high-resistance state), while the on-state (low resistance) was left with very little change. The cause of the variable memory windows in resistive switching phenomena appears to be the increasing amounts of movable oxygen ions between the TiO
x
and TiO
y
layers. In addition, the X-ray photoelectron spectroscopy measurements of the initial, low resistance, and high-resistance states in the homojunctions demonstrated the possible change of metallic and insulating Ti sub-oxide phases at the interfaces and oxygen ion rich region due to the migration of oxygen ions.</description><subject>Characterization and Evaluation of Materials</subject><subject>Condensed Matter Physics</subject><subject>Homojunctions</subject><subject>Low resistance</subject><subject>Machines</subject><subject>Manufacturing</subject><subject>Migration</subject><subject>Nanotechnology</subject><subject>Optical and Electronic Materials</subject><subject>Oxygen ions</subject><subject>Phases</subject><subject>Physics</subject><subject>Physics and Astronomy</subject><subject>Processes</subject><subject>Surfaces and Interfaces</subject><subject>Switching</subject><subject>Thin Films</subject><subject>Titanium</subject><subject>Titanium dioxide</subject><issn>0947-8396</issn><issn>1432-0630</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2011</creationdate><recordtype>article</recordtype><recordid>eNotkEtPwzAMgCMEEuPxA7jlyKXMSbpkPSLES0LiMs5RmroQ6JIRp7Dd-eEUDR9sS_5k2R9jFwKuBICZE4BSTQVCVFoup-aAzUStZAVawSGbQVObaqkafcxOiN5hilrKGftZZRcplJAiTz1fY3HDEDx3seMh0ji4EuIrXwVOY1ulbeiQpgFvwyYNLvOMFKiEL-T0HYp_28PP2_mUdrzPbo3fKX8Q70bkJfG03b1i5F_Ou-h3vMuhL3TGjno3EJ7_11P2cne7unmonp7vH2-un6qNVKJUy15ja3zddx0a0yzaJaAHJ1DXHSAYKeTCLbRGLxuoF0qJupXetV722qDX6pRd7vducvockYpdB_I4DC5iGskKbYQSRoKYULlHaZOnnzDb9zTmOF1nBdg_5Xav3E7K7Z9yC-oXCmB3Sg</recordid><startdate>20110301</startdate><enddate>20110301</enddate><creator>Bae, Yoon Cheol</creator><creator>Lee, Ah Rahm</creator><creator>Kwak, June Sik</creator><creator>Im, Hyunsik</creator><creator>Do, Young Ho</creator><creator>Hong, Jin Pyo</creator><general>Springer-Verlag</general><scope>7U5</scope><scope>8BQ</scope><scope>8FD</scope><scope>H8D</scope><scope>JG9</scope><scope>L7M</scope></search><sort><creationdate>20110301</creationdate><title>Transition of metallic and insulating Ti sub-oxides in bipolar resistive switching TiOx/TiOy frameworks due to oxygen vacancy drifts</title><author>Bae, Yoon Cheol ; Lee, Ah Rahm ; Kwak, June Sik ; Im, Hyunsik ; Do, Young Ho ; Hong, Jin Pyo</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-p231t-8f6eb7c4fdde7795b80ec0a1e64d0e072125a566ec290453314b2cabc2f67ec63</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2011</creationdate><topic>Characterization and Evaluation of Materials</topic><topic>Condensed Matter Physics</topic><topic>Homojunctions</topic><topic>Low resistance</topic><topic>Machines</topic><topic>Manufacturing</topic><topic>Migration</topic><topic>Nanotechnology</topic><topic>Optical and Electronic Materials</topic><topic>Oxygen ions</topic><topic>Phases</topic><topic>Physics</topic><topic>Physics and Astronomy</topic><topic>Processes</topic><topic>Surfaces and Interfaces</topic><topic>Switching</topic><topic>Thin Films</topic><topic>Titanium</topic><topic>Titanium dioxide</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Bae, Yoon Cheol</creatorcontrib><creatorcontrib>Lee, Ah Rahm</creatorcontrib><creatorcontrib>Kwak, June Sik</creatorcontrib><creatorcontrib>Im, Hyunsik</creatorcontrib><creatorcontrib>Do, Young Ho</creatorcontrib><creatorcontrib>Hong, Jin Pyo</creatorcontrib><collection>Solid State and Superconductivity Abstracts</collection><collection>METADEX</collection><collection>Technology Research Database</collection><collection>Aerospace Database</collection><collection>Materials Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Applied physics. A, Materials science & processing</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Bae, Yoon Cheol</au><au>Lee, Ah Rahm</au><au>Kwak, June Sik</au><au>Im, Hyunsik</au><au>Do, Young Ho</au><au>Hong, Jin Pyo</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Transition of metallic and insulating Ti sub-oxides in bipolar resistive switching TiOx/TiOy frameworks due to oxygen vacancy drifts</atitle><jtitle>Applied physics. A, Materials science & processing</jtitle><stitle>Appl. Phys. A</stitle><date>2011-03-01</date><risdate>2011</risdate><volume>102</volume><issue>4</issue><spage>1009</spage><epage>1013</epage><pages>1009-1013</pages><issn>0947-8396</issn><eissn>1432-0630</eissn><abstract>Bilayer TiO
x
(oxygen rich, region 1)/TiO
y
(oxygen poor, region 2) homojunctions were evaluated as resistive switching elements where the TiO
x
layers were designed with various oxygen contents. Depending on the oxygen ion content, controllable memory windows were observed by changing the off-state (high-resistance state), while the on-state (low resistance) was left with very little change. The cause of the variable memory windows in resistive switching phenomena appears to be the increasing amounts of movable oxygen ions between the TiO
x
and TiO
y
layers. In addition, the X-ray photoelectron spectroscopy measurements of the initial, low resistance, and high-resistance states in the homojunctions demonstrated the possible change of metallic and insulating Ti sub-oxide phases at the interfaces and oxygen ion rich region due to the migration of oxygen ions.</abstract><cop>Berlin/Heidelberg</cop><pub>Springer-Verlag</pub><doi>10.1007/s00339-011-6289-0</doi><tpages>5</tpages></addata></record> |
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| ispartof | Applied physics. A, Materials science & processing, 2011-03, Vol.102 (4), p.1009-1013 |
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| language | eng |
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| source | SpringerLink Journals - AutoHoldings |
| subjects | Characterization and Evaluation of Materials Condensed Matter Physics Homojunctions Low resistance Machines Manufacturing Migration Nanotechnology Optical and Electronic Materials Oxygen ions Phases Physics Physics and Astronomy Processes Surfaces and Interfaces Switching Thin Films Titanium Titanium dioxide |
| title | Transition of metallic and insulating Ti sub-oxides in bipolar resistive switching TiOx/TiOy frameworks due to oxygen vacancy drifts |
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