Influence of dummy active patterns on mechanical stress induced by spin-on-glass-filled shallow trench isolation in n-MOSFETs
This paper proposes an electrical method of extracting mechanical stress in n-MOSFETs and analyzes the influence of dummy active patterns on mechanical stress induced by spin-on-glass-filled shallow trench isolation (SOG-filled STI). The proposed method requires only the maximum transconductance g m...
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| Veröffentlicht in: | Microelectronic engineering 2011-06, Vol.88 (6), p.882-887 |
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| creator | Kim, Dongwoo Lee, Seonhaeng Oh, T.K. Cha, S.Y. Hong, S.J. Kang, Bongkoo |
| description | This paper proposes an electrical method of extracting mechanical stress in
n-MOSFETs and analyzes the influence of dummy active patterns on mechanical stress induced by spin-on-glass-filled shallow trench isolation (SOG-filled STI). The proposed method requires only the maximum transconductance
g
m
,max and measured subthreshold current
I
d
(
sub
.), eliminating the effect of deviations of the mobility
μ and effective channel length
L
eff
that occurred in a previous method using
μ. In addition, it eliminates the measurement error due to the drain induced barrier lowering (DIBL) effect in a previous method using
I
d
(
sub
.). The tensile stress
σ
t
in the experimental
n-MOSFETs was measured as several hundred mega Pascals. An increase of separation distance
d between dummy active regions and the Si active region resulted in a decrease of
σ
t
for
d
>
0.2
μm. But,
σ
t
decreased when
d decreased from 0.2 to 0.09
μm. |
| doi_str_mv | 10.1016/j.mee.2010.11.036 |
| format | Article |
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n-MOSFETs and analyzes the influence of dummy active patterns on mechanical stress induced by spin-on-glass-filled shallow trench isolation (SOG-filled STI). The proposed method requires only the maximum transconductance
g
m
,max and measured subthreshold current
I
d
(
sub
.), eliminating the effect of deviations of the mobility
μ and effective channel length
L
eff
that occurred in a previous method using
μ. In addition, it eliminates the measurement error due to the drain induced barrier lowering (DIBL) effect in a previous method using
I
d
(
sub
.). The tensile stress
σ
t
in the experimental
n-MOSFETs was measured as several hundred mega Pascals. An increase of separation distance
d between dummy active regions and the Si active region resulted in a decrease of
σ
t
for
d
>
0.2
μm. But,
σ
t
decreased when
d decreased from 0.2 to 0.09
μm.</description><identifier>ISSN: 0167-9317</identifier><identifier>EISSN: 1873-5568</identifier><identifier>DOI: 10.1016/j.mee.2010.11.036</identifier><identifier>CODEN: MIENEF</identifier><language>eng</language><publisher>Amsterdam: Elsevier B.V</publisher><subject>Applied sciences ; Channels ; Deviation ; Drain induced barrier lowering (DIBL) ; Drains ; Dummies ; Dummy active patterns ; Electronics ; Error analysis ; Exact sciences and technology ; Mechanical stress ; Pascal (programming language) ; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices ; Shallow trench isolation (STI) ; Stresses ; Subthreshold current ; Tensile stress ; Transistors ; Trenches</subject><ispartof>Microelectronic engineering, 2011-06, Vol.88 (6), p.882-887</ispartof><rights>2010 Elsevier B.V.</rights><rights>2015 INIST-CNRS</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c426t-7fecc76a71cc00609854fbdfe73f72f792d19a41e88e748369c021078cd696c43</citedby><cites>FETCH-LOGICAL-c426t-7fecc76a71cc00609854fbdfe73f72f792d19a41e88e748369c021078cd696c43</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://dx.doi.org/10.1016/j.mee.2010.11.036$$EHTML$$P50$$Gelsevier$$H</linktohtml><link.rule.ids>314,777,781,3537,27905,27906,45976</link.rule.ids><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=23964628$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>Kim, Dongwoo</creatorcontrib><creatorcontrib>Lee, Seonhaeng</creatorcontrib><creatorcontrib>Oh, T.K.</creatorcontrib><creatorcontrib>Cha, S.Y.</creatorcontrib><creatorcontrib>Hong, S.J.</creatorcontrib><creatorcontrib>Kang, Bongkoo</creatorcontrib><title>Influence of dummy active patterns on mechanical stress induced by spin-on-glass-filled shallow trench isolation in n-MOSFETs</title><title>Microelectronic engineering</title><description>This paper proposes an electrical method of extracting mechanical stress in
n-MOSFETs and analyzes the influence of dummy active patterns on mechanical stress induced by spin-on-glass-filled shallow trench isolation (SOG-filled STI). The proposed method requires only the maximum transconductance
g
m
,max and measured subthreshold current
I
d
(
sub
.), eliminating the effect of deviations of the mobility
μ and effective channel length
L
eff
that occurred in a previous method using
μ. In addition, it eliminates the measurement error due to the drain induced barrier lowering (DIBL) effect in a previous method using
I
d
(
sub
.). The tensile stress
σ
t
in the experimental
n-MOSFETs was measured as several hundred mega Pascals. An increase of separation distance
d between dummy active regions and the Si active region resulted in a decrease of
σ
t
for
d
>
0.2
μm. But,
σ
t
decreased when
d decreased from 0.2 to 0.09
μm.</description><subject>Applied sciences</subject><subject>Channels</subject><subject>Deviation</subject><subject>Drain induced barrier lowering (DIBL)</subject><subject>Drains</subject><subject>Dummies</subject><subject>Dummy active patterns</subject><subject>Electronics</subject><subject>Error analysis</subject><subject>Exact sciences and technology</subject><subject>Mechanical stress</subject><subject>Pascal (programming language)</subject><subject>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</subject><subject>Shallow trench isolation (STI)</subject><subject>Stresses</subject><subject>Subthreshold current</subject><subject>Tensile stress</subject><subject>Transistors</subject><subject>Trenches</subject><issn>0167-9317</issn><issn>1873-5568</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2011</creationdate><recordtype>article</recordtype><recordid>eNp9kMFu1DAQhi0EEkvLA3DzBYmLFzvJ2ok4oQraSkU9AGfLnYxZrxx78SSt9sC742grjpxGM_rnG83H2Dslt0oq_fGwnRC3jVx7tZWtfsE2qjet2O10_5JtasaIoVXmNXtDdJC172S_YX9uk48LJkCePR-XaTpxB3N4RH5084wlEc-JTwh7lwK4yGkuSMRDGhfAkT-cOB1DEjmJX9ERCR9irHPauxjzE6_pBHseKEc3h4oKiSfx7f771y8_6JK98i4Svn2uF-xnHV_diLv769urz3cCukbPwngEMNoZBSCllkO_6_zD6NG03jTeDM2oBtcp7Hs0Xd_qAWSjpOlh1IOGrr1gH87cY8m_F6TZToEAY3QJ80K2ylHVTQXXqDpHoWSigt4eS5hcOVkl7araHmxVbVfVVilbVded9894R1WRLy5BoH-LTTvoTjcr-9M5h_XXx4DFEoTV_RgKwmzHHP5z5S_NFJTN</recordid><startdate>20110601</startdate><enddate>20110601</enddate><creator>Kim, Dongwoo</creator><creator>Lee, Seonhaeng</creator><creator>Oh, T.K.</creator><creator>Cha, S.Y.</creator><creator>Hong, S.J.</creator><creator>Kang, Bongkoo</creator><general>Elsevier B.V</general><general>Elsevier</general><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>8FD</scope><scope>L7M</scope></search><sort><creationdate>20110601</creationdate><title>Influence of dummy active patterns on mechanical stress induced by spin-on-glass-filled shallow trench isolation in n-MOSFETs</title><author>Kim, Dongwoo ; Lee, Seonhaeng ; Oh, T.K. ; Cha, S.Y. ; Hong, S.J. ; Kang, Bongkoo</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c426t-7fecc76a71cc00609854fbdfe73f72f792d19a41e88e748369c021078cd696c43</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2011</creationdate><topic>Applied sciences</topic><topic>Channels</topic><topic>Deviation</topic><topic>Drain induced barrier lowering (DIBL)</topic><topic>Drains</topic><topic>Dummies</topic><topic>Dummy active patterns</topic><topic>Electronics</topic><topic>Error analysis</topic><topic>Exact sciences and technology</topic><topic>Mechanical stress</topic><topic>Pascal (programming language)</topic><topic>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</topic><topic>Shallow trench isolation (STI)</topic><topic>Stresses</topic><topic>Subthreshold current</topic><topic>Tensile stress</topic><topic>Transistors</topic><topic>Trenches</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Kim, Dongwoo</creatorcontrib><creatorcontrib>Lee, Seonhaeng</creatorcontrib><creatorcontrib>Oh, T.K.</creatorcontrib><creatorcontrib>Cha, S.Y.</creatorcontrib><creatorcontrib>Hong, S.J.</creatorcontrib><creatorcontrib>Kang, Bongkoo</creatorcontrib><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Microelectronic engineering</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Kim, Dongwoo</au><au>Lee, Seonhaeng</au><au>Oh, T.K.</au><au>Cha, S.Y.</au><au>Hong, S.J.</au><au>Kang, Bongkoo</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Influence of dummy active patterns on mechanical stress induced by spin-on-glass-filled shallow trench isolation in n-MOSFETs</atitle><jtitle>Microelectronic engineering</jtitle><date>2011-06-01</date><risdate>2011</risdate><volume>88</volume><issue>6</issue><spage>882</spage><epage>887</epage><pages>882-887</pages><issn>0167-9317</issn><eissn>1873-5568</eissn><coden>MIENEF</coden><abstract>This paper proposes an electrical method of extracting mechanical stress in
n-MOSFETs and analyzes the influence of dummy active patterns on mechanical stress induced by spin-on-glass-filled shallow trench isolation (SOG-filled STI). The proposed method requires only the maximum transconductance
g
m
,max and measured subthreshold current
I
d
(
sub
.), eliminating the effect of deviations of the mobility
μ and effective channel length
L
eff
that occurred in a previous method using
μ. In addition, it eliminates the measurement error due to the drain induced barrier lowering (DIBL) effect in a previous method using
I
d
(
sub
.). The tensile stress
σ
t
in the experimental
n-MOSFETs was measured as several hundred mega Pascals. An increase of separation distance
d between dummy active regions and the Si active region resulted in a decrease of
σ
t
for
d
>
0.2
μm. But,
σ
t
decreased when
d decreased from 0.2 to 0.09
μm.</abstract><cop>Amsterdam</cop><pub>Elsevier B.V</pub><doi>10.1016/j.mee.2010.11.036</doi><tpages>6</tpages></addata></record> |
| fulltext | fulltext |
| identifier | ISSN: 0167-9317 |
| ispartof | Microelectronic engineering, 2011-06, Vol.88 (6), p.882-887 |
| issn | 0167-9317 1873-5568 |
| language | eng |
| recordid | cdi_proquest_miscellaneous_1671317098 |
| source | Elsevier ScienceDirect Journals |
| subjects | Applied sciences Channels Deviation Drain induced barrier lowering (DIBL) Drains Dummies Dummy active patterns Electronics Error analysis Exact sciences and technology Mechanical stress Pascal (programming language) Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Shallow trench isolation (STI) Stresses Subthreshold current Tensile stress Transistors Trenches |
| title | Influence of dummy active patterns on mechanical stress induced by spin-on-glass-filled shallow trench isolation in n-MOSFETs |
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