A Ta/Mo Interdiffusion Dual Metal Gate Technology for Drivability Enhancement of FinFETs

A Ta/Mo interdiffusion dual metal gate technology was successfully introduced to FinFET fabrication. The advantage of the proposed technology was examined by using the gate-first process without a metal-etch off step. The Ta/Mo gated nMOS FinFET with a reduced threshold voltage and the Mo gated pMOS...

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Veröffentlicht in:	IEEE electron device letters 2008-06, Vol.29 (6), p.618-620
Hauptverfasser:	Matsukawa, T., Endo, K., Yongxun Liu, O'uchi, S., Ishikawa, Y., Yamauchi, H., Tsukada, J., Ishii, K., Masahara, M., Sakamoto, K., Suzuki, E.
Format:	Artikel
Sprache:	eng
Schlagworte:	Applied sciences Carrier mobility CMOS CMOS technology CMOSFET Degradation Design. Technologies. Operation analysis. Testing Devices dual metal gate Electric circuits Electronics Etching Exact sciences and technology Fabrication FinFET FinFETs Gates (circuits) Integrated circuits Interdiffusion Molybdenum (Mo) MOS devices MOSFETs Nanoelectronics Robustness Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Tantalum Tantalum (Ta) Threshold voltage Transistors work function (WF)
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