Ultra-low-noise indium-phosphide MMIC amplifiers for 85-115 GHz

This paper describes a high-performance indium-phosphide monolithic microwave integrated circuit (MMIC) amplifier, which has been developed for cooled application in ultra-low-noise imaging-array receivers. At 300 K, the four-stage amplifier exhibits more than 15-dB gain and better than 10-dB input...

Ausführliche Beschreibung

Gespeichert in:

Bibliographische Detailangaben
Veröffentlicht in:	IEEE transactions on microwave theory and techniques 2001-11, Vol.49 (11), p.2080-2085
Hauptverfasser:	Archer, J.W., Lai, R., Gough, R.
Format:	Artikel
Sprache:	eng
Schlagworte:	Amplification Amplifiers Australia Circuits Frequency bands Gain HEMTs Indium phosphide Low-noise amplifiers Microwaves Millimeter wave communication Millimeter wave technology MMICs MODFETs Noise Noise figure Noise levels Receivers
Online-Zugang:	Volltext bestellen
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!

Schreiben Sie den ersten Kommentar!