Ultra-low-noise indium-phosphide MMIC amplifiers for 85-115 GHz
This paper describes a high-performance indium-phosphide monolithic microwave integrated circuit (MMIC) amplifier, which has been developed for cooled application in ultra-low-noise imaging-array receivers. At 300 K, the four-stage amplifier exhibits more than 15-dB gain and better than 10-dB input...
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| Veröffentlicht in: | IEEE transactions on microwave theory and techniques 2001-11, Vol.49 (11), p.2080-2085 |
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| container_issue | 11 |
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| container_title | IEEE transactions on microwave theory and techniques |
| container_volume | 49 |
| creator | Archer, J.W. Lai, R. Gough, R. |
| description | This paper describes a high-performance indium-phosphide monolithic microwave integrated circuit (MMIC) amplifier, which has been developed for cooled application in ultra-low-noise imaging-array receivers. At 300 K, the four-stage amplifier exhibits more than 15-dB gain and better than 10-dB input and output return loss from 80 to 110 GHz. The room-temperature noise figure is typically 3.2 dB, measured between 90-98 GHz. When cooled to 15 K, the gain increases to more than 18 dB and the noise figure decreases to 0.5 dB. Only one design pass was required to obtain very good agreement between the predicted and measured characteristics of the circuit. The overall amplifier performance is comparable to the best ever reported for MMIC amplifiers in this frequency band. |
| doi_str_mv | 10.1109/22.963140 |
| format | Article |
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At 300 K, the four-stage amplifier exhibits more than 15-dB gain and better than 10-dB input and output return loss from 80 to 110 GHz. The room-temperature noise figure is typically 3.2 dB, measured between 90-98 GHz. When cooled to 15 K, the gain increases to more than 18 dB and the noise figure decreases to 0.5 dB. Only one design pass was required to obtain very good agreement between the predicted and measured characteristics of the circuit. The overall amplifier performance is comparable to the best ever reported for MMIC amplifiers in this frequency band.</description><identifier>ISSN: 0018-9480</identifier><identifier>EISSN: 1557-9670</identifier><identifier>DOI: 10.1109/22.963140</identifier><identifier>CODEN: IETMAB</identifier><language>eng</language><publisher>New York: IEEE</publisher><subject>Amplification ; Amplifiers ; Australia ; Circuits ; Frequency bands ; Gain ; HEMTs ; Indium phosphide ; Low-noise amplifiers ; Microwaves ; Millimeter wave communication ; Millimeter wave technology ; MMICs ; MODFETs ; Noise ; Noise figure ; Noise levels ; Receivers</subject><ispartof>IEEE transactions on microwave theory and techniques, 2001-11, Vol.49 (11), p.2080-2085</ispartof><rights>Copyright The Institute of Electrical and Electronics Engineers, Inc. (IEEE) 2001</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c368t-8985bfa3897af60b64b41b89cb26fb1cf5e45626e60dfcf7da7d45de8ca216363</citedby><cites>FETCH-LOGICAL-c368t-8985bfa3897af60b64b41b89cb26fb1cf5e45626e60dfcf7da7d45de8ca216363</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/963140$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>314,780,784,796,27924,27925,54758</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/963140$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc></links><search><creatorcontrib>Archer, J.W.</creatorcontrib><creatorcontrib>Lai, R.</creatorcontrib><creatorcontrib>Gough, R.</creatorcontrib><title>Ultra-low-noise indium-phosphide MMIC amplifiers for 85-115 GHz</title><title>IEEE transactions on microwave theory and techniques</title><addtitle>TMTT</addtitle><description>This paper describes a high-performance indium-phosphide monolithic microwave integrated circuit (MMIC) amplifier, which has been developed for cooled application in ultra-low-noise imaging-array receivers. At 300 K, the four-stage amplifier exhibits more than 15-dB gain and better than 10-dB input and output return loss from 80 to 110 GHz. The room-temperature noise figure is typically 3.2 dB, measured between 90-98 GHz. When cooled to 15 K, the gain increases to more than 18 dB and the noise figure decreases to 0.5 dB. Only one design pass was required to obtain very good agreement between the predicted and measured characteristics of the circuit. The overall amplifier performance is comparable to the best ever reported for MMIC amplifiers in this frequency band.</description><subject>Amplification</subject><subject>Amplifiers</subject><subject>Australia</subject><subject>Circuits</subject><subject>Frequency bands</subject><subject>Gain</subject><subject>HEMTs</subject><subject>Indium phosphide</subject><subject>Low-noise amplifiers</subject><subject>Microwaves</subject><subject>Millimeter wave communication</subject><subject>Millimeter wave technology</subject><subject>MMICs</subject><subject>MODFETs</subject><subject>Noise</subject><subject>Noise figure</subject><subject>Noise levels</subject><subject>Receivers</subject><issn>0018-9480</issn><issn>1557-9670</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2001</creationdate><recordtype>article</recordtype><sourceid>RIE</sourceid><recordid>eNqF0c1LwzAUAPAgCs7pwaun4kH0kJmX5qsnkaFzsOHFnUvaJiyjXWqyIvrX29HhwYOeHo_34_E-ELoEMgEg2T2lk0ykwMgRGgHnEmdCkmM0IgQUzpgip-gsxk2fMk7UCD2s6l3QuPYfeOtdNInbVq5rcLv2sV27yiTL5Xya6KatnXUmxMT6kCiOAXgye_k6RydW19FcHOIYrZ6f3qYvePE6m08fF7hMhdphlSleWJ2qTGorSCFYwaBQWVlQYQsoLTeMCyqMIJUtray0rBivjCo1BZGKdIxuhr5t8O-dibu8cbE0da23xncxpyqVKeXkfyikFILyHt7-CUFISPubkn3P619047uw7ffNlWIKANh-wrsBlcHHGIzN2-AaHT5zIPn-Nzml-fCb3l4N1hljftyh-A0164W1</recordid><startdate>20011101</startdate><enddate>20011101</enddate><creator>Archer, J.W.</creator><creator>Lai, R.</creator><creator>Gough, R.</creator><general>IEEE</general><general>The Institute of Electrical and Electronics Engineers, Inc. (IEEE)</general><scope>RIA</scope><scope>RIE</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>8FD</scope><scope>L7M</scope><scope>F28</scope><scope>FR3</scope><scope>H8D</scope></search><sort><creationdate>20011101</creationdate><title>Ultra-low-noise indium-phosphide MMIC amplifiers for 85-115 GHz</title><author>Archer, J.W. ; Lai, R. ; Gough, R.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c368t-8985bfa3897af60b64b41b89cb26fb1cf5e45626e60dfcf7da7d45de8ca216363</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2001</creationdate><topic>Amplification</topic><topic>Amplifiers</topic><topic>Australia</topic><topic>Circuits</topic><topic>Frequency bands</topic><topic>Gain</topic><topic>HEMTs</topic><topic>Indium phosphide</topic><topic>Low-noise amplifiers</topic><topic>Microwaves</topic><topic>Millimeter wave communication</topic><topic>Millimeter wave technology</topic><topic>MMICs</topic><topic>MODFETs</topic><topic>Noise</topic><topic>Noise figure</topic><topic>Noise levels</topic><topic>Receivers</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Archer, J.W.</creatorcontrib><creatorcontrib>Lai, R.</creatorcontrib><creatorcontrib>Gough, R.</creatorcontrib><collection>IEEE All-Society Periodicals Package (ASPP) 1998-Present</collection><collection>IEEE Electronic Library (IEL)</collection><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>ANTE: Abstracts in New Technology & Engineering</collection><collection>Engineering Research Database</collection><collection>Aerospace Database</collection><jtitle>IEEE transactions on microwave theory and techniques</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Archer, J.W.</au><au>Lai, R.</au><au>Gough, R.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Ultra-low-noise indium-phosphide MMIC amplifiers for 85-115 GHz</atitle><jtitle>IEEE transactions on microwave theory and techniques</jtitle><stitle>TMTT</stitle><date>2001-11-01</date><risdate>2001</risdate><volume>49</volume><issue>11</issue><spage>2080</spage><epage>2085</epage><pages>2080-2085</pages><issn>0018-9480</issn><eissn>1557-9670</eissn><coden>IETMAB</coden><abstract>This paper describes a high-performance indium-phosphide monolithic microwave integrated circuit (MMIC) amplifier, which has been developed for cooled application in ultra-low-noise imaging-array receivers. At 300 K, the four-stage amplifier exhibits more than 15-dB gain and better than 10-dB input and output return loss from 80 to 110 GHz. The room-temperature noise figure is typically 3.2 dB, measured between 90-98 GHz. When cooled to 15 K, the gain increases to more than 18 dB and the noise figure decreases to 0.5 dB. Only one design pass was required to obtain very good agreement between the predicted and measured characteristics of the circuit. The overall amplifier performance is comparable to the best ever reported for MMIC amplifiers in this frequency band.</abstract><cop>New York</cop><pub>IEEE</pub><doi>10.1109/22.963140</doi><tpages>6</tpages></addata></record> |
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| ispartof | IEEE transactions on microwave theory and techniques, 2001-11, Vol.49 (11), p.2080-2085 |
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| language | eng |
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| source | IEEE Electronic Library (IEL) |
| subjects | Amplification Amplifiers Australia Circuits Frequency bands Gain HEMTs Indium phosphide Low-noise amplifiers Microwaves Millimeter wave communication Millimeter wave technology MMICs MODFETs Noise Noise figure Noise levels Receivers |
| title | Ultra-low-noise indium-phosphide MMIC amplifiers for 85-115 GHz |
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