Positioning of the Fermi Level in Graphene Devices with Asymmetric Metal Electrodes
To elucidate the effect of the work function on the position of the Dirac point, we fabricated graphene devices with asymmetric metal contacts. By measuring the peak position of the resistance for each pair of metal electrodes, we obtained the voltage of the Dirac point VgDirac (V) from the gate res...
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| Veröffentlicht in: | Journal of nanomaterials 2010-01, Vol.2010 (1) |
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| container_title | Journal of nanomaterials |
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| creator | Kim, Bum-Kyu Jeon, Eun-Kyoung Kim, Ju-Jin Lee, Jeong-O |
| description | To elucidate the effect of the work function on the position of the Dirac point, we fabricated graphene devices with asymmetric metal contacts. By measuring the peak position of the resistance for each pair of metal electrodes, we obtained the voltage of the Dirac point VgDirac (V) from the gate response. We found that the position of VgDirac (V) in the hybrid devices was significantly influenced by the type of metal electrode. The measured shifts in VgDirac (V) were closely related to the modified work functions of the metal-graphene complexes. Within a certain bias range, the Fermi level of one of the contacts aligned with the electron band and that of the other contact aligned with the hole band. |
| doi_str_mv | 10.1155/2010/575472 |
| format | Article |
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By measuring the peak position of the resistance for each pair of metal electrodes, we obtained the voltage of the Dirac point VgDirac (V) from the gate response. We found that the position of VgDirac (V) in the hybrid devices was significantly influenced by the type of metal electrode. The measured shifts in VgDirac (V) were closely related to the modified work functions of the metal-graphene complexes. Within a certain bias range, the Fermi level of one of the contacts aligned with the electron band and that of the other contact aligned with the hole band.</description><identifier>ISSN: 1687-4110</identifier><identifier>EISSN: 1687-4129</identifier><identifier>DOI: 10.1155/2010/575472</identifier><language>eng</language><publisher>New York: Hindawi Publishing Corporation</publisher><subject>Alignment ; Asymmetry ; Devices ; Electrodes ; Experiments ; Fermi level ; Fermi surfaces ; Graphene ; Nanomaterials ; Semiconductors ; Voltage ; Work functions</subject><ispartof>Journal of nanomaterials, 2010-01, Vol.2010 (1)</ispartof><rights>Copyright © 2010 Bum-Kyu Kim et al.</rights><rights>Copyright © 2010 Bum-Kyu Kim et al. Bum-Kyu Kim et al. 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Within a certain bias range, the Fermi level of one of the contacts aligned with the electron band and that of the other contact aligned with the hole band.</description><subject>Alignment</subject><subject>Asymmetry</subject><subject>Devices</subject><subject>Electrodes</subject><subject>Experiments</subject><subject>Fermi level</subject><subject>Fermi surfaces</subject><subject>Graphene</subject><subject>Nanomaterials</subject><subject>Semiconductors</subject><subject>Voltage</subject><subject>Work functions</subject><issn>1687-4110</issn><issn>1687-4129</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2010</creationdate><recordtype>article</recordtype><sourceid>RHX</sourceid><sourceid>ABUWG</sourceid><sourceid>AFKRA</sourceid><sourceid>AZQEC</sourceid><sourceid>BENPR</sourceid><sourceid>CCPQU</sourceid><sourceid>DWQXO</sourceid><recordid>eNp90E9LwzAYBvAiCs7pyS8QPIlSlz9NmhyHblOYKKjnkLVvXUbbzCTb2Le3o-LBg6f3Pfx4eHiS5JLgO0I4H1FM8IjnPMvpUTIgQuZpRqg6_v0JPk3OQlhhnHHF6SB5e3XBRuta234iV6G4BDQF31g0hy3UyLZo5s16CS2gB9jaAgLa2bhE47BvGojeFugZoqnRpIYieldCOE9OKlMHuPi5w-RjOnm_f0znL7On-_E8NRnLYiqwVFIQhWVeUil5ZiCnC04rzisjqcgpKJCGYSO4YLQETBaGMgqsYIVQhg2T6z537d3XBkLUjQ0F1LVpwW2CJiInDCumREev_tCV2_i2a6cl74pkSvAO3fao8C4ED5Vee9sYv9cE68O--rCv7vft9E2vl7Ytzc7-i78BH4p3rA</recordid><startdate>20100101</startdate><enddate>20100101</enddate><creator>Kim, Bum-Kyu</creator><creator>Jeon, Eun-Kyoung</creator><creator>Kim, Ju-Jin</creator><creator>Lee, Jeong-O</creator><general>Hindawi Publishing Corporation</general><general>Hindawi Limited</general><scope>RHU</scope><scope>RHW</scope><scope>RHX</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7SR</scope><scope>7U5</scope><scope>8BQ</scope><scope>8FD</scope><scope>8FE</scope><scope>8FG</scope><scope>ABJCF</scope><scope>ABUWG</scope><scope>AFKRA</scope><scope>AZQEC</scope><scope>BENPR</scope><scope>BGLVJ</scope><scope>CCPQU</scope><scope>CWDGH</scope><scope>D1I</scope><scope>DWQXO</scope><scope>HCIFZ</scope><scope>JG9</scope><scope>KB.</scope><scope>L7M</scope><scope>PDBOC</scope><scope>PIMPY</scope><scope>PQEST</scope><scope>PQQKQ</scope><scope>PQUKI</scope><scope>PRINS</scope><scope>F28</scope><scope>FR3</scope></search><sort><creationdate>20100101</creationdate><title>Positioning of the Fermi Level in Graphene Devices with Asymmetric Metal Electrodes</title><author>Kim, Bum-Kyu ; 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| subjects | Alignment Asymmetry Devices Electrodes Experiments Fermi level Fermi surfaces Graphene Nanomaterials Semiconductors Voltage Work functions |
| title | Positioning of the Fermi Level in Graphene Devices with Asymmetric Metal Electrodes |
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