Deposited dielectrics on metal thin films using silicon and glass substrates for hot electron-induced electrochemiluminescence
Electrochemiluminescence by tunnel emission of hot electrons into aqueous solution is a sensitive method for detection of luminophores e.g. rare-earth chelates, which may be used as labels in bioassays. Electrons are injected into solution from an insulating film-coated working electrode, working ag...
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| Veröffentlicht in: | Thin solid films 2010-10, Vol.519 (1), p.430-433 |
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| container_title | Thin solid films |
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| creator | Niskanen, Antti J. Ylinen-Hinkka, Tiina Pusa, Matti Kulmala, Sakari Franssila, Sami |
| description | Electrochemiluminescence by tunnel emission of hot electrons into aqueous solution is a sensitive method for detection of luminophores e.g. rare-earth chelates, which may be used as labels in bioassays. Electrons are injected into solution from an insulating film-coated working electrode, working against a platinum counter electrode. Conductive silicon electrodes with various tunnel dielectric materials e.g. thermal oxide have been used in previous work. In this paper we explore the use of metal thin film electrodes on silicon and glass substrates, using tunneling dielectrics of aluminum oxide and silicon dioxide made by the low-temperature processes of atomic layer deposition or plasma-enhanced chemical vapor deposition. |
| doi_str_mv | 10.1016/j.tsf.2010.07.027 |
| format | Article |
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film growth and epitaxy</subject><subject>Physics</subject><subject>Rare earth metals</subject><subject>Silicon substrates</subject><subject>Thin films</subject><subject>Thin insulating</subject><subject>Vapor phase epitaxy; growth from vapor phase</subject><issn>0040-6090</issn><issn>1879-2731</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2010</creationdate><recordtype>article</recordtype><recordid>eNp9kMGOFCEQhonRxHH1AbxxMfHSswV0N9PxZNZVN9nEi54JQxc7TGgYKdrEi88uk5l49EQKvvqL-hh7K2ArQIy3x20lv5XQatBbkPoZ24idnjqplXjONgA9dCNM8JK9IjoCgJBSbdifT3jKFCrOfA4Y0dUSHPGc-ILVRl4PIXEf4kJ8pZCeOIUYXHu2aeZP0RJxWvdUi61I3OfCD7nyS1BOXUjz6lr29cIdcAlxXUJCcpgcvmYvvI2Eb67nDfvx-f773dfu8duXh7uPj51TI9TO-73ocSckoga9k8rjMGg3Ki1Ryr1yqPc4Qo_g51H5adBTA6ZxsHIaVC_UDXt_yT2V_HNFqmYJ7Qcx2oR5JSNGLVST0u8aKi6oK5mooDenEhZbfhsB5uzaHE1zbc6uDWjTXLeed9d4S85GX2xygf41yl5AP2nVuA8XDtuuvwIWQy6cPcyhNEFmzuE_U_4COZqWow</recordid><startdate>20101029</startdate><enddate>20101029</enddate><creator>Niskanen, Antti J.</creator><creator>Ylinen-Hinkka, Tiina</creator><creator>Pusa, Matti</creator><creator>Kulmala, Sakari</creator><creator>Franssila, Sami</creator><general>Elsevier B.V</general><general>Elsevier</general><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7SR</scope><scope>7U5</scope><scope>8BQ</scope><scope>8FD</scope><scope>JG9</scope><scope>L7M</scope></search><sort><creationdate>20101029</creationdate><title>Deposited dielectrics on metal thin films using silicon and glass substrates for hot electron-induced electrochemiluminescence</title><author>Niskanen, Antti J. ; 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| subjects | Aluminum oxide Atomic layer deposition Chemical vapor deposition Chemical vapor deposition (including plasma-enhanced cvd, mocvd, etc.) Chemiluminescence Chemistry Condensed matter: electronic structure, electrical, magnetic, and optical properties Cross-disciplinary physics: materials science rheology Deposition Dielectric, piezoelectric, ferroelectric and antiferroelectric materials Dielectrics Dielectrics, piezoelectrics, and ferroelectrics and their properties Electrochemiluminescence Electrochemistry Electrodes Electrodes: preparations and properties Exact sciences and technology Film-coated electrodes General and physical chemistry Glass Materials science Methods of deposition of films and coatings film growth and epitaxy Physics Rare earth metals Silicon substrates Thin films Thin insulating Vapor phase epitaxy growth from vapor phase |
| title | Deposited dielectrics on metal thin films using silicon and glass substrates for hot electron-induced electrochemiluminescence |
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