Optical microcavities fabricated by DBR overgrowth of pyramidal-shaped GaAs mesas
Optical cavities have been fabricated by overgrowth of truncated GaAs pyramids with a distributed Bragg reflector. The success of this overgrowth depends strongly on the crystallographic orientation of the pyramid facets and shows best results for { 1 1 4 } A facets. In order to fabricate mesas with...
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| Veröffentlicht in: | Journal of crystal growth 2011-06, Vol.324 (1), p.259-262 |
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| container_title | Journal of crystal growth |
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| creator | Rülke, D. Karl, M. Hu, D.Z. Schaadt, D.M. Kalt, H. Hetterich, M. |
| description | Optical cavities have been fabricated by overgrowth of truncated GaAs pyramids with a distributed Bragg reflector. The success of this overgrowth depends strongly on the crystallographic orientation of the pyramid facets and shows best results for
{
1
1
4
}
A facets. In order to fabricate mesas with precisely such facets, a wet-chemical etching process including several selective etching steps has been established. To determine the optical properties of these resonators, InAs quantum dots have been used as an internal broad-band light source. The quality factors for optical modes have been determined to range up to 8000 and show a dependency on cavity width. |
| doi_str_mv | 10.1016/j.jcrysgro.2011.03.041 |
| format | Article |
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A facets. In order to fabricate mesas with precisely such facets, a wet-chemical etching process including several selective etching steps has been established. To determine the optical properties of these resonators, InAs quantum dots have been used as an internal broad-band light source. The quality factors for optical modes have been determined to range up to 8000 and show a dependency on cavity width.</description><identifier>ISSN: 0022-0248</identifier><identifier>EISSN: 1873-5002</identifier><identifier>DOI: 10.1016/j.jcrysgro.2011.03.041</identifier><identifier>CODEN: JCRGAE</identifier><language>eng</language><publisher>Amsterdam: Elsevier B.V</publisher><subject>A1. Etching ; A1. Nanostructures ; A1. Optical microscopy ; A3. Molecular beam epitaxy ; B1. Arsenates ; B2. Semiconducting III–V materials ; Condensed matter: electronic structure, electrical, magnetic, and optical properties ; Condensed matter: structure, mechanical and thermal properties ; Cross-disciplinary physics: materials science; rheology ; Etching ; Exact sciences and technology ; Gallium arsenide ; Gallium arsenides ; Holes ; Materials science ; Mesas ; Microcavities ; Nanoscale materials and structures: fabrication and characterization ; Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation ; Optical properties of bulk materials and thin films ; Other topics in nanoscale materials and structures ; Physics ; Pyramids ; Quantum dots ; Structure of solids and liquids; crystallography ; Structure of specific crystalline solids</subject><ispartof>Journal of crystal growth, 2011-06, Vol.324 (1), p.259-262</ispartof><rights>2011 Elsevier B.V.</rights><rights>2015 INIST-CNRS</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c375t-c4d114a965ccbbc5589c6dc67821c445b9bad82de136bbdc0d6a098f8ef618f73</citedby><cites>FETCH-LOGICAL-c375t-c4d114a965ccbbc5589c6dc67821c445b9bad82de136bbdc0d6a098f8ef618f73</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://dx.doi.org/10.1016/j.jcrysgro.2011.03.041$$EHTML$$P50$$Gelsevier$$H</linktohtml><link.rule.ids>314,780,784,3550,27924,27925,45995</link.rule.ids><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=24276911$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>Rülke, D.</creatorcontrib><creatorcontrib>Karl, M.</creatorcontrib><creatorcontrib>Hu, D.Z.</creatorcontrib><creatorcontrib>Schaadt, D.M.</creatorcontrib><creatorcontrib>Kalt, H.</creatorcontrib><creatorcontrib>Hetterich, M.</creatorcontrib><title>Optical microcavities fabricated by DBR overgrowth of pyramidal-shaped GaAs mesas</title><title>Journal of crystal growth</title><description>Optical cavities have been fabricated by overgrowth of truncated GaAs pyramids with a distributed Bragg reflector. The success of this overgrowth depends strongly on the crystallographic orientation of the pyramid facets and shows best results for
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A facets. In order to fabricate mesas with precisely such facets, a wet-chemical etching process including several selective etching steps has been established. To determine the optical properties of these resonators, InAs quantum dots have been used as an internal broad-band light source. The quality factors for optical modes have been determined to range up to 8000 and show a dependency on cavity width.</description><subject>A1. Etching</subject><subject>A1. Nanostructures</subject><subject>A1. Optical microscopy</subject><subject>A3. Molecular beam epitaxy</subject><subject>B1. Arsenates</subject><subject>B2. Semiconducting III–V materials</subject><subject>Condensed matter: electronic structure, electrical, magnetic, and optical properties</subject><subject>Condensed matter: structure, mechanical and thermal properties</subject><subject>Cross-disciplinary physics: materials science; rheology</subject><subject>Etching</subject><subject>Exact sciences and technology</subject><subject>Gallium arsenide</subject><subject>Gallium arsenides</subject><subject>Holes</subject><subject>Materials science</subject><subject>Mesas</subject><subject>Microcavities</subject><subject>Nanoscale materials and structures: fabrication and characterization</subject><subject>Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation</subject><subject>Optical properties of bulk materials and thin films</subject><subject>Other topics in nanoscale materials and structures</subject><subject>Physics</subject><subject>Pyramids</subject><subject>Quantum dots</subject><subject>Structure of solids and liquids; crystallography</subject><subject>Structure of specific crystalline solids</subject><issn>0022-0248</issn><issn>1873-5002</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2011</creationdate><recordtype>article</recordtype><recordid>eNqFkE1LxDAQhoMouH78BelF8NKaSdu0vbl-rYIgip5DOkndLO22Zror--_NsurVSwbC887LPIydAU-Ag7xcJAv0G_rwfSI4QMLThGewxyZQFmmccy722SS8IuYiKw_ZEdGC85AEPmEvz8PoULdR59D3qNdudJaiRtc-fI_WRPUmur1-jfq19aHia5xHfRMNG687Z3Qb01wPgZrpKUWdJU0n7KDRLdnTn3nM3u_v3m4e4qfn2ePN9CnGtMjHGDMDkOlK5oh1jXleVigNyqIUgFmW11WtTSmMhVTWtUFupOZV2ZS2kVA2RXrMLnZ7B99_riyNqnOEtm310vYrUiALEFVa5TygcoeGE4m8bdTgXaf9RgFXW4dqoX4dqq1DxVMVHIbg-U-HpiCp8XqJjv7SIhOFrGDLXe04Gw5eO-sVobNLtMZ5i6Myvfuv6hvkwowE</recordid><startdate>20110601</startdate><enddate>20110601</enddate><creator>Rülke, D.</creator><creator>Karl, M.</creator><creator>Hu, D.Z.</creator><creator>Schaadt, D.M.</creator><creator>Kalt, H.</creator><creator>Hetterich, M.</creator><general>Elsevier B.V</general><general>Elsevier</general><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7QQ</scope><scope>7SR</scope><scope>7U5</scope><scope>8BQ</scope><scope>8FD</scope><scope>JG9</scope><scope>L7M</scope></search><sort><creationdate>20110601</creationdate><title>Optical microcavities fabricated by DBR overgrowth of pyramidal-shaped GaAs mesas</title><author>Rülke, D. ; Karl, M. ; Hu, D.Z. ; Schaadt, D.M. ; Kalt, H. ; Hetterich, M.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c375t-c4d114a965ccbbc5589c6dc67821c445b9bad82de136bbdc0d6a098f8ef618f73</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2011</creationdate><topic>A1. 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A facets. In order to fabricate mesas with precisely such facets, a wet-chemical etching process including several selective etching steps has been established. To determine the optical properties of these resonators, InAs quantum dots have been used as an internal broad-band light source. The quality factors for optical modes have been determined to range up to 8000 and show a dependency on cavity width.</abstract><cop>Amsterdam</cop><pub>Elsevier B.V</pub><doi>10.1016/j.jcrysgro.2011.03.041</doi><tpages>4</tpages></addata></record> |
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| ispartof | Journal of crystal growth, 2011-06, Vol.324 (1), p.259-262 |
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| subjects | A1. Etching A1. Nanostructures A1. Optical microscopy A3. Molecular beam epitaxy B1. Arsenates B2. Semiconducting III–V materials Condensed matter: electronic structure, electrical, magnetic, and optical properties Condensed matter: structure, mechanical and thermal properties Cross-disciplinary physics: materials science rheology Etching Exact sciences and technology Gallium arsenide Gallium arsenides Holes Materials science Mesas Microcavities Nanoscale materials and structures: fabrication and characterization Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation Optical properties of bulk materials and thin films Other topics in nanoscale materials and structures Physics Pyramids Quantum dots Structure of solids and liquids crystallography Structure of specific crystalline solids |
| title | Optical microcavities fabricated by DBR overgrowth of pyramidal-shaped GaAs mesas |
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