Growth and annealing of InAs quantum dots on pre-structured GaAs substrates

In this study, we investigated the effect of in situ annealing on InAs quantum dots site-selectively grown on pre-structured GaAs substrates. A morphological transition is observed with original double dots merging into one single dot during annealing. This is accompanied by a reduction of quantum d...

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Veröffentlicht in:	Journal of crystal growth 2011-05, Vol.323 (1), p.187-190
Hauptverfasser:	Helfrich, M., Hu, D.Z., Hendrickson, J., Gehl, M., Rülke, D., Gröger, R., Litvinov, D., Linden, S., Wegener, M., Gerthsen, D., Schimmel, T., Hetterich, M., Kalt, H., Khitrova, G., Gibbs, H.M., Schaadt, D.M.
Format:	Artikel
Sprache:	eng
Schlagworte:	A1. In situ annealing A1. Patterning A1. Quantum dots A1. Site-selective growth A3. Molecular beam epitaxy Annealing Applied sciences Cleaning Cross-disciplinary physics: materials science rheology Crystal growth Electronics Exact sciences and technology Gallium arsenide Gallium arsenides Indium arsenides Materials science Methods of deposition of films and coatings film growth and epitaxy Molecular electronics, nanoelectronics Nanoscale materials and structures: fabrication and characterization Other semiconductors Physics Quantum dots Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Specific materials Theory and models of film growth
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Zusammenfassung:	In this study, we investigated the effect of in situ annealing on InAs quantum dots site-selectively grown on pre-structured GaAs substrates. A morphological transition is observed with original double dots merging into one single dot during annealing. This is accompanied by a reduction of quantum dots originally nucleating between defined sites. The photoluminescence intensity of annealed site-selective quantum dots is compared to annealed self-assembled dots with linewidths of single dot emission of about 170 and 81μeV, respectively. UV-ozone cleaning is used to optimize the sample cleaning prior to quantum dot growth.
ISSN:	0022-0248 1873-5002
DOI:	10.1016/j.jcrysgro.2010.11.162