Growth temperature dependence of strain relaxation during InGaAs/GaAs(001) heteroepitaxy

Growth temperature dependence of strain relaxation during In0.12Ga0.88As/GaAs(001) molecular beam epitaxy was studied by in situ X-ray reciprocal space mapping. Evolution of the residual strain and crystal quality for the InGaAs film was obtained as a function of film thickness at growth temperature...

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Veröffentlicht in:	Journal of crystal growth 2011-05, Vol.323 (1), p.13-16
Hauptverfasser:	Sasaki, Takuo, Suzuki, Hidetoshi, Sai, Akihisa, Takahasi, Masamitu, Fujikawa, Seiji, Kamiya, Itaru, Ohshita, Yoshio, Yamaguchi, Masafumi
Format:	Artikel
Sprache:	eng
Schlagworte:	A1. Stresses A1. X-ray diffraction A3. Molecular beam epitaxy B2. Semiconducting III–V materials Condensed matter: structure, mechanical and thermal properties Cross-disciplinary physics: materials science rheology Crystals Dislocations Evolution Exact sciences and technology Indium gallium arsenides Materials science Mathematical models Mechanical and acoustical properties Mechanical and acoustical properties of condensed matter Mechanical properties of nanoscale materials Methods of deposition of films and coatings film growth and epitaxy Other semiconductors Physical properties of thin films, nonelectronic Physics Specific materials Strain Strain relaxation Surfaces and interfaces thin films and whiskers (structure and nonelectronic properties) Temperature dependence Theory and models of film growth
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