Growth temperature dependence of strain relaxation during InGaAs/GaAs(001) heteroepitaxy
Growth temperature dependence of strain relaxation during In0.12Ga0.88As/GaAs(001) molecular beam epitaxy was studied by in situ X-ray reciprocal space mapping. Evolution of the residual strain and crystal quality for the InGaAs film was obtained as a function of film thickness at growth temperature...
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| Veröffentlicht in: | Journal of crystal growth 2011-05, Vol.323 (1), p.13-16 |
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| creator | Sasaki, Takuo Suzuki, Hidetoshi Sai, Akihisa Takahasi, Masamitu Fujikawa, Seiji Kamiya, Itaru Ohshita, Yoshio Yamaguchi, Masafumi |
| description | Growth temperature dependence of strain relaxation during In0.12Ga0.88As/GaAs(001) molecular beam epitaxy was studied by in situ X-ray reciprocal space mapping. Evolution of the residual strain and crystal quality for the InGaAs film was obtained as a function of film thickness at growth temperatures of 420, 445 and 477°C. In the early stages of strain relaxation, it was found that evolution of the residual strain and crystal quality was dependent on the growth temperature. In order to discuss this observation quantitatively, the strain relaxation model was proposed based on the Dodson–Tsao kinetic model, and its validity was demonstrated by good agreement with the experimental residual strain. Additionally, rate coefficients reflecting dislocation motions during strain relaxation were obtained as a function of growth temperature and strain relaxation was discussed in terms of the thermally active dislocation motion. |
| doi_str_mv | 10.1016/j.jcrysgro.2010.10.005 |
| format | Article |
| fullrecord | <record><control><sourceid>proquest_cross</sourceid><recordid>TN_cdi_proquest_miscellaneous_1671276960</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><els_id>S0022024810007359</els_id><sourcerecordid>1671276960</sourcerecordid><originalsourceid>FETCH-LOGICAL-c441t-8ab0d89cb043ed52d101dc181dfa010e17b1752c83e9dc5b0affeb1ab16d833b3</originalsourceid><addsrcrecordid>eNqFkE9rGzEQxUVpoK7Tr1D2UkgOa8_sf99iQuoGAr0k0JvQSrOJzHq1GcmJ_e2rrd1ee5mB4b15vJ8QXxEWCFgtt4ut5qN_ZrfI4M9xAVB-EDNs6jwtAbKPYhZnlkJWNJ_EZ--3ANGJMBO_Nuzew0sSaDcSq7BnSgyNNBgaNCWuS3xgZYeEqVcHFawbErNnOzwn98NGrf1yGlfx3XXyQoHY0WiDOhwvxUWnek9fznsunr7fPd7-SB9-bu5v1w-pLgoMaaNaMM1Kt1DkZMrMxEpGY4OmU7EMYd1iXWa6yWlldNmC6jpqUbVYmSbP23wurk5_R3ave_JB7qzX1PdqILf3Eqsas7paVRCl1Umq2XnP1MmR7U7xUSLICaXcyr8o5YRyukeU0fjtnKG8Vn3HatDW_3NnRY7Q4BRwc9JRLPxmiaXXduJoLJMO0jj7v6jf5JyOMw</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>1671276960</pqid></control><display><type>article</type><title>Growth temperature dependence of strain relaxation during InGaAs/GaAs(001) heteroepitaxy</title><source>ScienceDirect Journals (5 years ago - present)</source><creator>Sasaki, Takuo ; Suzuki, Hidetoshi ; Sai, Akihisa ; Takahasi, Masamitu ; Fujikawa, Seiji ; Kamiya, Itaru ; Ohshita, Yoshio ; Yamaguchi, Masafumi</creator><creatorcontrib>Sasaki, Takuo ; Suzuki, Hidetoshi ; Sai, Akihisa ; Takahasi, Masamitu ; Fujikawa, Seiji ; Kamiya, Itaru ; Ohshita, Yoshio ; Yamaguchi, Masafumi</creatorcontrib><description>Growth temperature dependence of strain relaxation during In0.12Ga0.88As/GaAs(001) molecular beam epitaxy was studied by in situ X-ray reciprocal space mapping. Evolution of the residual strain and crystal quality for the InGaAs film was obtained as a function of film thickness at growth temperatures of 420, 445 and 477°C. In the early stages of strain relaxation, it was found that evolution of the residual strain and crystal quality was dependent on the growth temperature. In order to discuss this observation quantitatively, the strain relaxation model was proposed based on the Dodson–Tsao kinetic model, and its validity was demonstrated by good agreement with the experimental residual strain. Additionally, rate coefficients reflecting dislocation motions during strain relaxation were obtained as a function of growth temperature and strain relaxation was discussed in terms of the thermally active dislocation motion.</description><identifier>ISSN: 0022-0248</identifier><identifier>EISSN: 1873-5002</identifier><identifier>DOI: 10.1016/j.jcrysgro.2010.10.005</identifier><identifier>CODEN: JCRGAE</identifier><language>eng</language><publisher>Amsterdam: Elsevier B.V</publisher><subject>A1. Stresses ; A1. X-ray diffraction ; A3. Molecular beam epitaxy ; B2. Semiconducting III–V materials ; Condensed matter: structure, mechanical and thermal properties ; Cross-disciplinary physics: materials science; rheology ; Crystals ; Dislocations ; Evolution ; Exact sciences and technology ; Indium gallium arsenides ; Materials science ; Mathematical models ; Mechanical and acoustical properties ; Mechanical and acoustical properties of condensed matter ; Mechanical properties of nanoscale materials ; Methods of deposition of films and coatings; film growth and epitaxy ; Other semiconductors ; Physical properties of thin films, nonelectronic ; Physics ; Specific materials ; Strain ; Strain relaxation ; Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties) ; Temperature dependence ; Theory and models of film growth</subject><ispartof>Journal of crystal growth, 2011-05, Vol.323 (1), p.13-16</ispartof><rights>2010 Elsevier B.V.</rights><rights>2015 INIST-CNRS</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c441t-8ab0d89cb043ed52d101dc181dfa010e17b1752c83e9dc5b0affeb1ab16d833b3</citedby><cites>FETCH-LOGICAL-c441t-8ab0d89cb043ed52d101dc181dfa010e17b1752c83e9dc5b0affeb1ab16d833b3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://dx.doi.org/10.1016/j.jcrysgro.2010.10.005$$EHTML$$P50$$Gelsevier$$H</linktohtml><link.rule.ids>309,310,314,780,784,789,790,3548,23929,23930,25139,27923,27924,45994</link.rule.ids><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=24310810$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>Sasaki, Takuo</creatorcontrib><creatorcontrib>Suzuki, Hidetoshi</creatorcontrib><creatorcontrib>Sai, Akihisa</creatorcontrib><creatorcontrib>Takahasi, Masamitu</creatorcontrib><creatorcontrib>Fujikawa, Seiji</creatorcontrib><creatorcontrib>Kamiya, Itaru</creatorcontrib><creatorcontrib>Ohshita, Yoshio</creatorcontrib><creatorcontrib>Yamaguchi, Masafumi</creatorcontrib><title>Growth temperature dependence of strain relaxation during InGaAs/GaAs(001) heteroepitaxy</title><title>Journal of crystal growth</title><description>Growth temperature dependence of strain relaxation during In0.12Ga0.88As/GaAs(001) molecular beam epitaxy was studied by in situ X-ray reciprocal space mapping. Evolution of the residual strain and crystal quality for the InGaAs film was obtained as a function of film thickness at growth temperatures of 420, 445 and 477°C. In the early stages of strain relaxation, it was found that evolution of the residual strain and crystal quality was dependent on the growth temperature. In order to discuss this observation quantitatively, the strain relaxation model was proposed based on the Dodson–Tsao kinetic model, and its validity was demonstrated by good agreement with the experimental residual strain. Additionally, rate coefficients reflecting dislocation motions during strain relaxation were obtained as a function of growth temperature and strain relaxation was discussed in terms of the thermally active dislocation motion.</description><subject>A1. Stresses</subject><subject>A1. X-ray diffraction</subject><subject>A3. Molecular beam epitaxy</subject><subject>B2. Semiconducting III–V materials</subject><subject>Condensed matter: structure, mechanical and thermal properties</subject><subject>Cross-disciplinary physics: materials science; rheology</subject><subject>Crystals</subject><subject>Dislocations</subject><subject>Evolution</subject><subject>Exact sciences and technology</subject><subject>Indium gallium arsenides</subject><subject>Materials science</subject><subject>Mathematical models</subject><subject>Mechanical and acoustical properties</subject><subject>Mechanical and acoustical properties of condensed matter</subject><subject>Mechanical properties of nanoscale materials</subject><subject>Methods of deposition of films and coatings; film growth and epitaxy</subject><subject>Other semiconductors</subject><subject>Physical properties of thin films, nonelectronic</subject><subject>Physics</subject><subject>Specific materials</subject><subject>Strain</subject><subject>Strain relaxation</subject><subject>Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties)</subject><subject>Temperature dependence</subject><subject>Theory and models of film growth</subject><issn>0022-0248</issn><issn>1873-5002</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2011</creationdate><recordtype>article</recordtype><recordid>eNqFkE9rGzEQxUVpoK7Tr1D2UkgOa8_sf99iQuoGAr0k0JvQSrOJzHq1GcmJ_e2rrd1ee5mB4b15vJ8QXxEWCFgtt4ut5qN_ZrfI4M9xAVB-EDNs6jwtAbKPYhZnlkJWNJ_EZ--3ANGJMBO_Nuzew0sSaDcSq7BnSgyNNBgaNCWuS3xgZYeEqVcHFawbErNnOzwn98NGrf1yGlfx3XXyQoHY0WiDOhwvxUWnek9fznsunr7fPd7-SB9-bu5v1w-pLgoMaaNaMM1Kt1DkZMrMxEpGY4OmU7EMYd1iXWa6yWlldNmC6jpqUbVYmSbP23wurk5_R3ave_JB7qzX1PdqILf3Eqsas7paVRCl1Umq2XnP1MmR7U7xUSLICaXcyr8o5YRyukeU0fjtnKG8Vn3HatDW_3NnRY7Q4BRwc9JRLPxmiaXXduJoLJMO0jj7v6jf5JyOMw</recordid><startdate>20110515</startdate><enddate>20110515</enddate><creator>Sasaki, Takuo</creator><creator>Suzuki, Hidetoshi</creator><creator>Sai, Akihisa</creator><creator>Takahasi, Masamitu</creator><creator>Fujikawa, Seiji</creator><creator>Kamiya, Itaru</creator><creator>Ohshita, Yoshio</creator><creator>Yamaguchi, Masafumi</creator><general>Elsevier B.V</general><general>Elsevier</general><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7QQ</scope><scope>7SR</scope><scope>7U5</scope><scope>8BQ</scope><scope>8FD</scope><scope>JG9</scope><scope>L7M</scope></search><sort><creationdate>20110515</creationdate><title>Growth temperature dependence of strain relaxation during InGaAs/GaAs(001) heteroepitaxy</title><author>Sasaki, Takuo ; Suzuki, Hidetoshi ; Sai, Akihisa ; Takahasi, Masamitu ; Fujikawa, Seiji ; Kamiya, Itaru ; Ohshita, Yoshio ; Yamaguchi, Masafumi</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c441t-8ab0d89cb043ed52d101dc181dfa010e17b1752c83e9dc5b0affeb1ab16d833b3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2011</creationdate><topic>A1. Stresses</topic><topic>A1. X-ray diffraction</topic><topic>A3. Molecular beam epitaxy</topic><topic>B2. Semiconducting III–V materials</topic><topic>Condensed matter: structure, mechanical and thermal properties</topic><topic>Cross-disciplinary physics: materials science; rheology</topic><topic>Crystals</topic><topic>Dislocations</topic><topic>Evolution</topic><topic>Exact sciences and technology</topic><topic>Indium gallium arsenides</topic><topic>Materials science</topic><topic>Mathematical models</topic><topic>Mechanical and acoustical properties</topic><topic>Mechanical and acoustical properties of condensed matter</topic><topic>Mechanical properties of nanoscale materials</topic><topic>Methods of deposition of films and coatings; film growth and epitaxy</topic><topic>Other semiconductors</topic><topic>Physical properties of thin films, nonelectronic</topic><topic>Physics</topic><topic>Specific materials</topic><topic>Strain</topic><topic>Strain relaxation</topic><topic>Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties)</topic><topic>Temperature dependence</topic><topic>Theory and models of film growth</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Sasaki, Takuo</creatorcontrib><creatorcontrib>Suzuki, Hidetoshi</creatorcontrib><creatorcontrib>Sai, Akihisa</creatorcontrib><creatorcontrib>Takahasi, Masamitu</creatorcontrib><creatorcontrib>Fujikawa, Seiji</creatorcontrib><creatorcontrib>Kamiya, Itaru</creatorcontrib><creatorcontrib>Ohshita, Yoshio</creatorcontrib><creatorcontrib>Yamaguchi, Masafumi</creatorcontrib><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>Ceramic Abstracts</collection><collection>Engineered Materials Abstracts</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>METADEX</collection><collection>Technology Research Database</collection><collection>Materials Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Journal of crystal growth</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Sasaki, Takuo</au><au>Suzuki, Hidetoshi</au><au>Sai, Akihisa</au><au>Takahasi, Masamitu</au><au>Fujikawa, Seiji</au><au>Kamiya, Itaru</au><au>Ohshita, Yoshio</au><au>Yamaguchi, Masafumi</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Growth temperature dependence of strain relaxation during InGaAs/GaAs(001) heteroepitaxy</atitle><jtitle>Journal of crystal growth</jtitle><date>2011-05-15</date><risdate>2011</risdate><volume>323</volume><issue>1</issue><spage>13</spage><epage>16</epage><pages>13-16</pages><issn>0022-0248</issn><eissn>1873-5002</eissn><coden>JCRGAE</coden><abstract>Growth temperature dependence of strain relaxation during In0.12Ga0.88As/GaAs(001) molecular beam epitaxy was studied by in situ X-ray reciprocal space mapping. Evolution of the residual strain and crystal quality for the InGaAs film was obtained as a function of film thickness at growth temperatures of 420, 445 and 477°C. In the early stages of strain relaxation, it was found that evolution of the residual strain and crystal quality was dependent on the growth temperature. In order to discuss this observation quantitatively, the strain relaxation model was proposed based on the Dodson–Tsao kinetic model, and its validity was demonstrated by good agreement with the experimental residual strain. Additionally, rate coefficients reflecting dislocation motions during strain relaxation were obtained as a function of growth temperature and strain relaxation was discussed in terms of the thermally active dislocation motion.</abstract><cop>Amsterdam</cop><pub>Elsevier B.V</pub><doi>10.1016/j.jcrysgro.2010.10.005</doi><tpages>4</tpages></addata></record> |
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| subjects | A1. Stresses A1. X-ray diffraction A3. Molecular beam epitaxy B2. Semiconducting III–V materials Condensed matter: structure, mechanical and thermal properties Cross-disciplinary physics: materials science rheology Crystals Dislocations Evolution Exact sciences and technology Indium gallium arsenides Materials science Mathematical models Mechanical and acoustical properties Mechanical and acoustical properties of condensed matter Mechanical properties of nanoscale materials Methods of deposition of films and coatings film growth and epitaxy Other semiconductors Physical properties of thin films, nonelectronic Physics Specific materials Strain Strain relaxation Surfaces and interfaces thin films and whiskers (structure and nonelectronic properties) Temperature dependence Theory and models of film growth |
| title | Growth temperature dependence of strain relaxation during InGaAs/GaAs(001) heteroepitaxy |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-10T21%3A02%3A49IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_cross&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Growth%20temperature%20dependence%20of%20strain%20relaxation%20during%20InGaAs/GaAs(001)%20heteroepitaxy&rft.jtitle=Journal%20of%20crystal%20growth&rft.au=Sasaki,%20Takuo&rft.date=2011-05-15&rft.volume=323&rft.issue=1&rft.spage=13&rft.epage=16&rft.pages=13-16&rft.issn=0022-0248&rft.eissn=1873-5002&rft.coden=JCRGAE&rft_id=info:doi/10.1016/j.jcrysgro.2010.10.005&rft_dat=%3Cproquest_cross%3E1671276960%3C/proquest_cross%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_pqid=1671276960&rft_id=info:pmid/&rft_els_id=S0022024810007359&rfr_iscdi=true |