Suitability of metal gate stacks for low-power and high-performance applications: impact of carrier confinement

A simulation study is carried out to assess the competitiveness of metal gate stacks for low-power and high-performance technologies using realistic oxynitride and high-permittivity gate dielectric stacks having insulator leakages appropriate for each application. In the first part of this paper, th...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Veröffentlicht in:IEEE transactions on electron devices 2006-05, Vol.53 (5), p.1208-1215
Hauptverfasser: Kumar, A., Solomon, P.M.
Format: Artikel
Sprache:eng
Schlagworte:
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
container_end_page 1215
container_issue 5
container_start_page 1208
container_title IEEE transactions on electron devices
container_volume 53
creator Kumar, A.
Solomon, P.M.
description A simulation study is carried out to assess the competitiveness of metal gate stacks for low-power and high-performance technologies using realistic oxynitride and high-permittivity gate dielectric stacks having insulator leakages appropriate for each application. In the first part of this paper, the metal-gate work function is fixed at a value near midgap. For this value of work function, the performance (obtained from mixed-mode simulations of inverter delay chains) of metal gate stacks is found to exceed that of polysilicon gate stacks for low-power applications, but to be uncompetitive for high-performance applications. Both of these observations are explained by understanding the role of carrier confinement determined by the channel doping required for each application. In the second part of this paper, the metal-gate work function is allowed to vary in order to obtain the optimal work-function ranges for each application. Metal gate stacks are shown to be especially suitable for low-power applications over a wide range of possible work functions, with optimal performance away from the band edges. For high-performance applications, work functions near the band edges yield the best performance, but significant gains compared to polysilicon-gated devices are found only when additional scaling is achieved through a use of a high-permittivity gate insulator.
doi_str_mv 10.1109/TED.2006.872883
format Article
fullrecord <record><control><sourceid>proquest_RIE</sourceid><recordid>TN_cdi_proquest_miscellaneous_1671276253</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><ieee_id>1624704</ieee_id><sourcerecordid>2340436541</sourcerecordid><originalsourceid>FETCH-LOGICAL-c448t-cb3315721faed0ea6d93fd8f9ff92e32c63cc817efaaf2ab10d0facf488e53313</originalsourceid><addsrcrecordid>eNp9kU2LFDEQhoMoOI6ePXgJguKlZ_PVSdqbrOsHLHhwPYeadGU3a3enTTIs--_NMAsLHjwVoZ73gcpLyGvOdpyz4ezq4vNOMKZ31ghr5ROy4X1vukEr_ZRsGOO2G6SVz8mLUm7bUyslNiT9PMQK-zjFek9ToDNWmOg1VKSlgv9daEiZTumuW9MdZgrLSG_i9U23Ym6bGRaPFNZ1ih5qTEv5SOO8gq9HmYecYwv5tIS44IxLfUmeBZgKvnqYW_Lry8XV-bfu8sfX7-efLjuvlK2d30vJeyN4ABwZgh4HGUYbhhAGgVJ4Lb233GAACAL2nI0sgA_KWuxbVG7J-5N3zenPAUt1cywepwkWTIfihGV6YFo38MN_Qa4NF0aLZt2St_-gt-mQl3aGs7rnWhslGnR2gnxOpWQMbs1xhnzvOHPHolwryh2LcqeiWuLdgxaKhynk9qexPMaMUYOQR_ObExcR8XGthTJMyb8rK51x</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>865166742</pqid></control><display><type>article</type><title>Suitability of metal gate stacks for low-power and high-performance applications: impact of carrier confinement</title><source>IEEE Electronic Library (IEL)</source><creator>Kumar, A. ; Solomon, P.M.</creator><creatorcontrib>Kumar, A. ; Solomon, P.M.</creatorcontrib><description>A simulation study is carried out to assess the competitiveness of metal gate stacks for low-power and high-performance technologies using realistic oxynitride and high-permittivity gate dielectric stacks having insulator leakages appropriate for each application. In the first part of this paper, the metal-gate work function is fixed at a value near midgap. For this value of work function, the performance (obtained from mixed-mode simulations of inverter delay chains) of metal gate stacks is found to exceed that of polysilicon gate stacks for low-power applications, but to be uncompetitive for high-performance applications. Both of these observations are explained by understanding the role of carrier confinement determined by the channel doping required for each application. In the second part of this paper, the metal-gate work function is allowed to vary in order to obtain the optimal work-function ranges for each application. Metal gate stacks are shown to be especially suitable for low-power applications over a wide range of possible work functions, with optimal performance away from the band edges. For high-performance applications, work functions near the band edges yield the best performance, but significant gains compared to polysilicon-gated devices are found only when additional scaling is achieved through a use of a high-permittivity gate insulator.</description><identifier>ISSN: 0018-9383</identifier><identifier>EISSN: 1557-9646</identifier><identifier>DOI: 10.1109/TED.2006.872883</identifier><identifier>CODEN: IETDAI</identifier><language>eng</language><publisher>New York, NY: IEEE</publisher><subject>Applied sciences ; Charge carrier lifetime ; Compound structure devices ; Confinement ; Devices ; Dielectric materials ; Electronic equipment and fabrication. Passive components, printed wiring boards, connectics ; Electronics ; Exact sciences and technology ; Gates ; Insulators ; MOS devices ; Optimization ; Permittivity ; semiconductor device modeling ; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices ; Simulation ; Stacks ; work function ; Work functions</subject><ispartof>IEEE transactions on electron devices, 2006-05, Vol.53 (5), p.1208-1215</ispartof><rights>2006 INIST-CNRS</rights><rights>Copyright The Institute of Electrical and Electronics Engineers, Inc. (IEEE) 2006</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c448t-cb3315721faed0ea6d93fd8f9ff92e32c63cc817efaaf2ab10d0facf488e53313</citedby><cites>FETCH-LOGICAL-c448t-cb3315721faed0ea6d93fd8f9ff92e32c63cc817efaaf2ab10d0facf488e53313</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/1624704$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>314,780,784,796,27924,27925,54758</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/1624704$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&amp;idt=17749232$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>Kumar, A.</creatorcontrib><creatorcontrib>Solomon, P.M.</creatorcontrib><title>Suitability of metal gate stacks for low-power and high-performance applications: impact of carrier confinement</title><title>IEEE transactions on electron devices</title><addtitle>TED</addtitle><description>A simulation study is carried out to assess the competitiveness of metal gate stacks for low-power and high-performance technologies using realistic oxynitride and high-permittivity gate dielectric stacks having insulator leakages appropriate for each application. In the first part of this paper, the metal-gate work function is fixed at a value near midgap. For this value of work function, the performance (obtained from mixed-mode simulations of inverter delay chains) of metal gate stacks is found to exceed that of polysilicon gate stacks for low-power applications, but to be uncompetitive for high-performance applications. Both of these observations are explained by understanding the role of carrier confinement determined by the channel doping required for each application. In the second part of this paper, the metal-gate work function is allowed to vary in order to obtain the optimal work-function ranges for each application. Metal gate stacks are shown to be especially suitable for low-power applications over a wide range of possible work functions, with optimal performance away from the band edges. For high-performance applications, work functions near the band edges yield the best performance, but significant gains compared to polysilicon-gated devices are found only when additional scaling is achieved through a use of a high-permittivity gate insulator.</description><subject>Applied sciences</subject><subject>Charge carrier lifetime</subject><subject>Compound structure devices</subject><subject>Confinement</subject><subject>Devices</subject><subject>Dielectric materials</subject><subject>Electronic equipment and fabrication. Passive components, printed wiring boards, connectics</subject><subject>Electronics</subject><subject>Exact sciences and technology</subject><subject>Gates</subject><subject>Insulators</subject><subject>MOS devices</subject><subject>Optimization</subject><subject>Permittivity</subject><subject>semiconductor device modeling</subject><subject>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</subject><subject>Simulation</subject><subject>Stacks</subject><subject>work function</subject><subject>Work functions</subject><issn>0018-9383</issn><issn>1557-9646</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2006</creationdate><recordtype>article</recordtype><sourceid>RIE</sourceid><recordid>eNp9kU2LFDEQhoMoOI6ePXgJguKlZ_PVSdqbrOsHLHhwPYeadGU3a3enTTIs--_NMAsLHjwVoZ73gcpLyGvOdpyz4ezq4vNOMKZ31ghr5ROy4X1vukEr_ZRsGOO2G6SVz8mLUm7bUyslNiT9PMQK-zjFek9ToDNWmOg1VKSlgv9daEiZTumuW9MdZgrLSG_i9U23Ym6bGRaPFNZ1ih5qTEv5SOO8gq9HmYecYwv5tIS44IxLfUmeBZgKvnqYW_Lry8XV-bfu8sfX7-efLjuvlK2d30vJeyN4ABwZgh4HGUYbhhAGgVJ4Lb233GAACAL2nI0sgA_KWuxbVG7J-5N3zenPAUt1cywepwkWTIfihGV6YFo38MN_Qa4NF0aLZt2St_-gt-mQl3aGs7rnWhslGnR2gnxOpWQMbs1xhnzvOHPHolwryh2LcqeiWuLdgxaKhynk9qexPMaMUYOQR_ObExcR8XGthTJMyb8rK51x</recordid><startdate>20060501</startdate><enddate>20060501</enddate><creator>Kumar, A.</creator><creator>Solomon, P.M.</creator><general>IEEE</general><general>Institute of Electrical and Electronics Engineers</general><general>The Institute of Electrical and Electronics Engineers, Inc. (IEEE)</general><scope>97E</scope><scope>RIA</scope><scope>RIE</scope><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>8FD</scope><scope>L7M</scope><scope>F28</scope><scope>FR3</scope></search><sort><creationdate>20060501</creationdate><title>Suitability of metal gate stacks for low-power and high-performance applications: impact of carrier confinement</title><author>Kumar, A. ; Solomon, P.M.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c448t-cb3315721faed0ea6d93fd8f9ff92e32c63cc817efaaf2ab10d0facf488e53313</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2006</creationdate><topic>Applied sciences</topic><topic>Charge carrier lifetime</topic><topic>Compound structure devices</topic><topic>Confinement</topic><topic>Devices</topic><topic>Dielectric materials</topic><topic>Electronic equipment and fabrication. Passive components, printed wiring boards, connectics</topic><topic>Electronics</topic><topic>Exact sciences and technology</topic><topic>Gates</topic><topic>Insulators</topic><topic>MOS devices</topic><topic>Optimization</topic><topic>Permittivity</topic><topic>semiconductor device modeling</topic><topic>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</topic><topic>Simulation</topic><topic>Stacks</topic><topic>work function</topic><topic>Work functions</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Kumar, A.</creatorcontrib><creatorcontrib>Solomon, P.M.</creatorcontrib><collection>IEEE All-Society Periodicals Package (ASPP) 2005-present</collection><collection>IEEE All-Society Periodicals Package (ASPP) 1998-Present</collection><collection>IEEE Electronic Library (IEL)</collection><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>Electronics &amp; Communications Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>ANTE: Abstracts in New Technology &amp; Engineering</collection><collection>Engineering Research Database</collection><jtitle>IEEE transactions on electron devices</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Kumar, A.</au><au>Solomon, P.M.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Suitability of metal gate stacks for low-power and high-performance applications: impact of carrier confinement</atitle><jtitle>IEEE transactions on electron devices</jtitle><stitle>TED</stitle><date>2006-05-01</date><risdate>2006</risdate><volume>53</volume><issue>5</issue><spage>1208</spage><epage>1215</epage><pages>1208-1215</pages><issn>0018-9383</issn><eissn>1557-9646</eissn><coden>IETDAI</coden><abstract>A simulation study is carried out to assess the competitiveness of metal gate stacks for low-power and high-performance technologies using realistic oxynitride and high-permittivity gate dielectric stacks having insulator leakages appropriate for each application. In the first part of this paper, the metal-gate work function is fixed at a value near midgap. For this value of work function, the performance (obtained from mixed-mode simulations of inverter delay chains) of metal gate stacks is found to exceed that of polysilicon gate stacks for low-power applications, but to be uncompetitive for high-performance applications. Both of these observations are explained by understanding the role of carrier confinement determined by the channel doping required for each application. In the second part of this paper, the metal-gate work function is allowed to vary in order to obtain the optimal work-function ranges for each application. Metal gate stacks are shown to be especially suitable for low-power applications over a wide range of possible work functions, with optimal performance away from the band edges. For high-performance applications, work functions near the band edges yield the best performance, but significant gains compared to polysilicon-gated devices are found only when additional scaling is achieved through a use of a high-permittivity gate insulator.</abstract><cop>New York, NY</cop><pub>IEEE</pub><doi>10.1109/TED.2006.872883</doi><tpages>8</tpages></addata></record>
fulltext fulltext_linktorsrc
identifier ISSN: 0018-9383
ispartof IEEE transactions on electron devices, 2006-05, Vol.53 (5), p.1208-1215
issn 0018-9383
1557-9646
language eng
recordid cdi_proquest_miscellaneous_1671276253
source IEEE Electronic Library (IEL)
subjects Applied sciences
Charge carrier lifetime
Compound structure devices
Confinement
Devices
Dielectric materials
Electronic equipment and fabrication. Passive components, printed wiring boards, connectics
Electronics
Exact sciences and technology
Gates
Insulators
MOS devices
Optimization
Permittivity
semiconductor device modeling
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Simulation
Stacks
work function
Work functions
title Suitability of metal gate stacks for low-power and high-performance applications: impact of carrier confinement
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2024-12-23T10%3A47%3A54IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_RIE&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Suitability%20of%20metal%20gate%20stacks%20for%20low-power%20and%20high-performance%20applications:%20impact%20of%20carrier%20confinement&rft.jtitle=IEEE%20transactions%20on%20electron%20devices&rft.au=Kumar,%20A.&rft.date=2006-05-01&rft.volume=53&rft.issue=5&rft.spage=1208&rft.epage=1215&rft.pages=1208-1215&rft.issn=0018-9383&rft.eissn=1557-9646&rft.coden=IETDAI&rft_id=info:doi/10.1109/TED.2006.872883&rft_dat=%3Cproquest_RIE%3E2340436541%3C/proquest_RIE%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_pqid=865166742&rft_id=info:pmid/&rft_ieee_id=1624704&rfr_iscdi=true