Properties of innovative resistive memories studied by X-ray and UV photoemission

Pt/NiO‐based devices are promising candidates for the next generation of resistive random access memories (RRAMs). X‐ray (XPS) and ultraviolet (UPS) photoemission are performed to investigate the chemical and electronic properties of this stack. After resistive switching of the nickel oxide, the as‐...

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Veröffentlicht in:	Surface and interface analysis 2010-06, Vol.42 (6-7), p.783-786
Hauptverfasser:	Martinez, E., Guedj, C., Calka, P., Minoret, S., Buckley, J., Bernard, Y., Jousseaume, V.
Format:	Artikel
Sprache:	eng
Schlagworte:	Devices Electron affinity NiO Photoemission Platinum resistive random access memory Ultraviolet ultraviolet photoelectron spectroscopy UPS X-ray photoelectron spectroscopy X-rays
Online-Zugang:	Volltext
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