Negative-type Chemically Amplified Photosensitive Novolac
A negative-type chemically amplified photosensitive resist based on a novolac resin, 4,4'-methylenebis[2,6-bis(methoxymethyl)phenol] (MBMP) as a cross-linker, and (5-propylsulfonyloxyimino-5H-thiophen-2-ylidene)-(2-methylphenyl)acetonitrile (PTMA) as a photoacid generator has been developed. Th...
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| Veröffentlicht in: | Journal of Photopolymer Science and Technology 2008/06/24, Vol.21(1), pp.161-164 |
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| container_end_page | 164 |
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| container_title | Journal of Photopolymer Science and Technology |
| container_volume | 21 |
| creator | Saito, Yuta Mizoguchi, katsuhisa Ueda, Mitsuru |
| description | A negative-type chemically amplified photosensitive resist based on a novolac resin, 4,4'-methylenebis[2,6-bis(methoxymethyl)phenol] (MBMP) as a cross-linker, and (5-propylsulfonyloxyimino-5H-thiophen-2-ylidene)-(2-methylphenyl)acetonitrile (PTMA) as a photoacid generator has been developed. This resist showed the high sensitivity (D0.5) of 5.3 mJ/cm2 and good contrast (γ0.5) of 3.5 after exposure of 365 nm UV light, post exposure baked at 110 ° for 5 min, and developed with 2.38 wt% tetramethylammonium hydroxide aqueous solution. The 20 μm image was made in the polymer with 12 μm film thickness by using the resist consisting of novolac resin (90 wt %), MBMP (7 wt %), and PTMA (3 wt %). |
| doi_str_mv | 10.2494/photopolymer.21.161 |
| format | Article |
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This resist showed the high sensitivity (D0.5) of 5.3 mJ/cm2 and good contrast (γ0.5) of 3.5 after exposure of 365 nm UV light, post exposure baked at 110 ° for 5 min, and developed with 2.38 wt% tetramethylammonium hydroxide aqueous solution. The 20 μm image was made in the polymer with 12 μm film thickness by using the resist consisting of novolac resin (90 wt %), MBMP (7 wt %), and PTMA (3 wt %).</description><identifier>ISSN: 0914-9244</identifier><identifier>ISSN: 1349-6336</identifier><identifier>EISSN: 1349-6336</identifier><identifier>DOI: 10.2494/photopolymer.21.161</identifier><language>eng</language><publisher>Hiratsuka: The Society of Photopolymer Science and Technology(SPST)</publisher><subject>Amplification ; Aqueous solutions ; chemically amplified resists ; cross-linker ; Film thickness ; novolac resin ; Novolacs ; photoacid generator ; Polymers ; Resins ; Resists</subject><ispartof>Journal of Photopolymer Science and Technology, 2008/06/24, Vol.21(1), pp.161-164</ispartof><rights>2008 The Society of Photopolymer Science and Technology (SPST)</rights><rights>Copyright Japan Science and Technology Agency 2008</rights><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c612t-9320af5ff09ca08df5826c89b0dd70b560f861c470b19b2af7d9c178a36f47b43</citedby><cites>FETCH-LOGICAL-c612t-9320af5ff09ca08df5826c89b0dd70b560f861c470b19b2af7d9c178a36f47b43</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,776,780,1877,27903,27904</link.rule.ids></links><search><creatorcontrib>Saito, Yuta</creatorcontrib><creatorcontrib>Mizoguchi, katsuhisa</creatorcontrib><creatorcontrib>Ueda, Mitsuru</creatorcontrib><title>Negative-type Chemically Amplified Photosensitive Novolac</title><title>Journal of Photopolymer Science and Technology</title><addtitle>J. Photopol. Sci. Technol.</addtitle><description>A negative-type chemically amplified photosensitive resist based on a novolac resin, 4,4'-methylenebis[2,6-bis(methoxymethyl)phenol] (MBMP) as a cross-linker, and (5-propylsulfonyloxyimino-5H-thiophen-2-ylidene)-(2-methylphenyl)acetonitrile (PTMA) as a photoacid generator has been developed. This resist showed the high sensitivity (D0.5) of 5.3 mJ/cm2 and good contrast (γ0.5) of 3.5 after exposure of 365 nm UV light, post exposure baked at 110 ° for 5 min, and developed with 2.38 wt% tetramethylammonium hydroxide aqueous solution. The 20 μm image was made in the polymer with 12 μm film thickness by using the resist consisting of novolac resin (90 wt %), MBMP (7 wt %), and PTMA (3 wt %).</description><subject>Amplification</subject><subject>Aqueous solutions</subject><subject>chemically amplified resists</subject><subject>cross-linker</subject><subject>Film thickness</subject><subject>novolac resin</subject><subject>Novolacs</subject><subject>photoacid generator</subject><subject>Polymers</subject><subject>Resins</subject><subject>Resists</subject><issn>0914-9244</issn><issn>1349-6336</issn><issn>1349-6336</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2008</creationdate><recordtype>article</recordtype><recordid>eNplkLFOwzAQhi0EEqXwBCyRWFhSfLbjxGNVAUWqgAFmy3HsNpVTBzutlLcnVVCFYLm74fv-Ox1Ct4BnhAn20G5851vv-saEGYEZcDhDE6BMpJxSfo4mWABLBWHsEl3FuMWY0iwTEyRezVp19cGkXd-aZLExTa2Vc30yb1pX29pUyfsxPZpdrI9g8uoP3il9jS6sctHc_PQp-nx6_Fgs09Xb88tivko1B9KlghKsbGYtFlrhorJZQbguRImrKsdlxrEtOGg2zCBKomxeCQ15oSi3LC8ZnaL7MbcN_mtvYiebOmrjnNoZv48SeA6ECybEgN79Qbd-H3bDdRIYY5zxDIqBoiOlg48xGCvbUDcq9BKwPL5T_n6nJDCsgMFajtY2dmptTo4KXa2d-e-MZVBPiN6oIM2OfgOj4Yb0</recordid><startdate>20080101</startdate><enddate>20080101</enddate><creator>Saito, Yuta</creator><creator>Mizoguchi, katsuhisa</creator><creator>Ueda, Mitsuru</creator><general>The Society of Photopolymer Science and Technology(SPST)</general><general>Japan Science and Technology Agency</general><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>7SR</scope><scope>7U5</scope><scope>8FD</scope><scope>JG9</scope><scope>L7M</scope></search><sort><creationdate>20080101</creationdate><title>Negative-type Chemically Amplified Photosensitive Novolac</title><author>Saito, Yuta ; Mizoguchi, katsuhisa ; Ueda, Mitsuru</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c612t-9320af5ff09ca08df5826c89b0dd70b560f861c470b19b2af7d9c178a36f47b43</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2008</creationdate><topic>Amplification</topic><topic>Aqueous solutions</topic><topic>chemically amplified resists</topic><topic>cross-linker</topic><topic>Film thickness</topic><topic>novolac resin</topic><topic>Novolacs</topic><topic>photoacid generator</topic><topic>Polymers</topic><topic>Resins</topic><topic>Resists</topic><toplevel>online_resources</toplevel><creatorcontrib>Saito, Yuta</creatorcontrib><creatorcontrib>Mizoguchi, katsuhisa</creatorcontrib><creatorcontrib>Ueda, Mitsuru</creatorcontrib><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Engineered Materials Abstracts</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>Technology Research Database</collection><collection>Materials Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Journal of Photopolymer Science and Technology</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Saito, Yuta</au><au>Mizoguchi, katsuhisa</au><au>Ueda, Mitsuru</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Negative-type Chemically Amplified Photosensitive Novolac</atitle><jtitle>Journal of Photopolymer Science and Technology</jtitle><addtitle>J. Photopol. Sci. Technol.</addtitle><date>2008-01-01</date><risdate>2008</risdate><volume>21</volume><issue>1</issue><spage>161</spage><epage>164</epage><pages>161-164</pages><issn>0914-9244</issn><issn>1349-6336</issn><eissn>1349-6336</eissn><abstract>A negative-type chemically amplified photosensitive resist based on a novolac resin, 4,4'-methylenebis[2,6-bis(methoxymethyl)phenol] (MBMP) as a cross-linker, and (5-propylsulfonyloxyimino-5H-thiophen-2-ylidene)-(2-methylphenyl)acetonitrile (PTMA) as a photoacid generator has been developed. This resist showed the high sensitivity (D0.5) of 5.3 mJ/cm2 and good contrast (γ0.5) of 3.5 after exposure of 365 nm UV light, post exposure baked at 110 ° for 5 min, and developed with 2.38 wt% tetramethylammonium hydroxide aqueous solution. The 20 μm image was made in the polymer with 12 μm film thickness by using the resist consisting of novolac resin (90 wt %), MBMP (7 wt %), and PTMA (3 wt %).</abstract><cop>Hiratsuka</cop><pub>The Society of Photopolymer Science and Technology(SPST)</pub><doi>10.2494/photopolymer.21.161</doi><tpages>4</tpages><oa>free_for_read</oa></addata></record> |
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| subjects | Amplification Aqueous solutions chemically amplified resists cross-linker Film thickness novolac resin Novolacs photoacid generator Polymers Resins Resists |
| title | Negative-type Chemically Amplified Photosensitive Novolac |
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