Prediction of strong ground state electron and hole wave function spatial overlap in nonpolar GaN/AlN quantum dots

We present a detailed analysis of the electrostatic built-in field, the electronic structure, and the optical properties of a-plane GaN/AlN quantum dots with an arrowhead-shaped geometry. This geometry is based on extensive experimental analysis given in the literature. Our results indicate that the...

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Veröffentlicht in:	Applied physics letters 2012-09, Vol.101 (11)
Hauptverfasser:	Schulz, S., Caro, M. A., O'Reilly, E. P.
Format:	Artikel
Sprache:	eng
Schlagworte:	Aluminum nitride Electronic structure Electrostatics Gallium nitrides Ground state Optical properties Quantum dots Wave functions
Online-Zugang:	Volltext
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