Impact of lateral asymmetric channel doping on deep submicrometer mixed-signal device and circuit performance

In this paper, we have systematically investigated the effect of scaling on analog performance parameters in lateral asymmetric channel (LAC) MOSFETs and compared their performance with conventional (CON) MOSFETs for mixed-signal applications. Our results show that, in LAC MOSFETs, there is signific...

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Bibliographische Detailangaben

Veröffentlicht in:	IEEE transactions on electron devices 2003-12, Vol.50 (12), p.2481-2489
Hauptverfasser:	Narasimhulu, K., Sharma, D.K., Rao, V.R.
Format:	Artikel
Sprache:	eng
Schlagworte:	Asymmetry Channels Circuits CMOS CMOS integrated circuits Devices Gain Mixed analog-digital integrated circuits MOSFETs Semiconductor device doping Simulation
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