Changes of optical, dielectric, and structural properties of Si sub(15Sb) sub(8)5 phase change memory thin films under different initializing laser power
The optical, dielectric, and structural characteristics of Si sub(15Sb) sub(8)5 phase change memory thin films under a moving continuous-wave laser initialization are studied by using spectroscopic ellipsometry and high-resolution transmission electron microscopy. The dependence of complex refractiv...
Gespeichert in:
| Veröffentlicht in: | Journal of alloys and compounds 2011-04, Vol.509 (16), p.5050-5054 |
|---|---|
| Hauptverfasser: | , , , , , , |
| Format: | Artikel |
| Sprache: | eng |
| Schlagworte: | |
| Online-Zugang: | Volltext |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| container_end_page | 5054 |
|---|---|
| container_issue | 16 |
| container_start_page | 5050 |
| container_title | Journal of alloys and compounds |
| container_volume | 509 |
| creator | Huang, Huan Zhang, Lei Wang, Yang Han, Xiao Dong Wu, Yiqun Zhang, Ze Gan, Fuxi |
| description | The optical, dielectric, and structural characteristics of Si sub(15Sb) sub(8)5 phase change memory thin films under a moving continuous-wave laser initialization are studied by using spectroscopic ellipsometry and high-resolution transmission electron microscopy. The dependence of complex refractive index, dielectric functions, absorption coefficient, and optical band gap of the films on its crystallization extents formed by the different initialization laser power are analyzed in detail. The structural change from as-deposited amorphous phase to distorted rhombohedra-Sb-like crystalline structure with the increase of initialization laser power is clearly observed with sub-nanometer resolution. The optical and dielectric constants, the relationship between them, and the local atomic arrangements of this new phase change material can help explain the phase change mechanism and design the practical phase change memory devices. |
| doi_str_mv | 10.1016/j.jallcom.2011.02.031 |
| format | Article |
| fullrecord | <record><control><sourceid>proquest</sourceid><recordid>TN_cdi_proquest_miscellaneous_1671261443</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>1671261443</sourcerecordid><originalsourceid>FETCH-proquest_miscellaneous_16712614433</originalsourceid><addsrcrecordid>eNqVjs1OwzAQhH0AqeXnESrtsZXa4E2akJ4rEPdyr1xn02zk2ME_QvAmvC1R4QV6mjnMNzNCLFBmKLF66rNeGaPdkOUSMZN5Jgu8EXO5y8tNXdT1TNyF0EspcVfgXPzsO2XPFMC14MbIWpk1NEyGdPSs16BsAyH6pGPyysDo3Ug-8h9xYAjptMTycFpdXL0qYexUINCXXhhocP4LYscWWjZDgGQb8tNE25InG4EtR1aGv9mewUyoh9F9kn8Qt60ygR7_9V4sX1_e92-b6cJHohCPAwdNxihLLoUjVs-YV7jdFsUV0V8Ek2Pg</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>1671261443</pqid></control><display><type>article</type><title>Changes of optical, dielectric, and structural properties of Si sub(15Sb) sub(8)5 phase change memory thin films under different initializing laser power</title><source>Elsevier ScienceDirect Journals Complete</source><creator>Huang, Huan ; Zhang, Lei ; Wang, Yang ; Han, Xiao Dong ; Wu, Yiqun ; Zhang, Ze ; Gan, Fuxi</creator><creatorcontrib>Huang, Huan ; Zhang, Lei ; Wang, Yang ; Han, Xiao Dong ; Wu, Yiqun ; Zhang, Ze ; Gan, Fuxi</creatorcontrib><description>The optical, dielectric, and structural characteristics of Si sub(15Sb) sub(8)5 phase change memory thin films under a moving continuous-wave laser initialization are studied by using spectroscopic ellipsometry and high-resolution transmission electron microscopy. The dependence of complex refractive index, dielectric functions, absorption coefficient, and optical band gap of the films on its crystallization extents formed by the different initialization laser power are analyzed in detail. The structural change from as-deposited amorphous phase to distorted rhombohedra-Sb-like crystalline structure with the increase of initialization laser power is clearly observed with sub-nanometer resolution. The optical and dielectric constants, the relationship between them, and the local atomic arrangements of this new phase change material can help explain the phase change mechanism and design the practical phase change memory devices.</description><identifier>ISSN: 0925-8388</identifier><identifier>DOI: 10.1016/j.jallcom.2011.02.031</identifier><language>eng</language><subject>Alloys ; Data storage ; Dielectric properties ; Dielectrics ; Ellipsometry ; Lasers ; Memory devices ; Phase change ; Thin films</subject><ispartof>Journal of alloys and compounds, 2011-04, Vol.509 (16), p.5050-5054</ispartof><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,776,780,27901,27902</link.rule.ids></links><search><creatorcontrib>Huang, Huan</creatorcontrib><creatorcontrib>Zhang, Lei</creatorcontrib><creatorcontrib>Wang, Yang</creatorcontrib><creatorcontrib>Han, Xiao Dong</creatorcontrib><creatorcontrib>Wu, Yiqun</creatorcontrib><creatorcontrib>Zhang, Ze</creatorcontrib><creatorcontrib>Gan, Fuxi</creatorcontrib><title>Changes of optical, dielectric, and structural properties of Si sub(15Sb) sub(8)5 phase change memory thin films under different initializing laser power</title><title>Journal of alloys and compounds</title><description>The optical, dielectric, and structural characteristics of Si sub(15Sb) sub(8)5 phase change memory thin films under a moving continuous-wave laser initialization are studied by using spectroscopic ellipsometry and high-resolution transmission electron microscopy. The dependence of complex refractive index, dielectric functions, absorption coefficient, and optical band gap of the films on its crystallization extents formed by the different initialization laser power are analyzed in detail. The structural change from as-deposited amorphous phase to distorted rhombohedra-Sb-like crystalline structure with the increase of initialization laser power is clearly observed with sub-nanometer resolution. The optical and dielectric constants, the relationship between them, and the local atomic arrangements of this new phase change material can help explain the phase change mechanism and design the practical phase change memory devices.</description><subject>Alloys</subject><subject>Data storage</subject><subject>Dielectric properties</subject><subject>Dielectrics</subject><subject>Ellipsometry</subject><subject>Lasers</subject><subject>Memory devices</subject><subject>Phase change</subject><subject>Thin films</subject><issn>0925-8388</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2011</creationdate><recordtype>article</recordtype><recordid>eNqVjs1OwzAQhH0AqeXnESrtsZXa4E2akJ4rEPdyr1xn02zk2ME_QvAmvC1R4QV6mjnMNzNCLFBmKLF66rNeGaPdkOUSMZN5Jgu8EXO5y8tNXdT1TNyF0EspcVfgXPzsO2XPFMC14MbIWpk1NEyGdPSs16BsAyH6pGPyysDo3Ug-8h9xYAjptMTycFpdXL0qYexUINCXXhhocP4LYscWWjZDgGQb8tNE25InG4EtR1aGv9mewUyoh9F9kn8Qt60ygR7_9V4sX1_e92-b6cJHohCPAwdNxihLLoUjVs-YV7jdFsUV0V8Ek2Pg</recordid><startdate>20110421</startdate><enddate>20110421</enddate><creator>Huang, Huan</creator><creator>Zhang, Lei</creator><creator>Wang, Yang</creator><creator>Han, Xiao Dong</creator><creator>Wu, Yiqun</creator><creator>Zhang, Ze</creator><creator>Gan, Fuxi</creator><scope>8BQ</scope><scope>8FD</scope><scope>H8D</scope><scope>JG9</scope><scope>L7M</scope></search><sort><creationdate>20110421</creationdate><title>Changes of optical, dielectric, and structural properties of Si sub(15Sb) sub(8)5 phase change memory thin films under different initializing laser power</title><author>Huang, Huan ; Zhang, Lei ; Wang, Yang ; Han, Xiao Dong ; Wu, Yiqun ; Zhang, Ze ; Gan, Fuxi</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-proquest_miscellaneous_16712614433</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2011</creationdate><topic>Alloys</topic><topic>Data storage</topic><topic>Dielectric properties</topic><topic>Dielectrics</topic><topic>Ellipsometry</topic><topic>Lasers</topic><topic>Memory devices</topic><topic>Phase change</topic><topic>Thin films</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Huang, Huan</creatorcontrib><creatorcontrib>Zhang, Lei</creatorcontrib><creatorcontrib>Wang, Yang</creatorcontrib><creatorcontrib>Han, Xiao Dong</creatorcontrib><creatorcontrib>Wu, Yiqun</creatorcontrib><creatorcontrib>Zhang, Ze</creatorcontrib><creatorcontrib>Gan, Fuxi</creatorcontrib><collection>METADEX</collection><collection>Technology Research Database</collection><collection>Aerospace Database</collection><collection>Materials Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Journal of alloys and compounds</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Huang, Huan</au><au>Zhang, Lei</au><au>Wang, Yang</au><au>Han, Xiao Dong</au><au>Wu, Yiqun</au><au>Zhang, Ze</au><au>Gan, Fuxi</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Changes of optical, dielectric, and structural properties of Si sub(15Sb) sub(8)5 phase change memory thin films under different initializing laser power</atitle><jtitle>Journal of alloys and compounds</jtitle><date>2011-04-21</date><risdate>2011</risdate><volume>509</volume><issue>16</issue><spage>5050</spage><epage>5054</epage><pages>5050-5054</pages><issn>0925-8388</issn><abstract>The optical, dielectric, and structural characteristics of Si sub(15Sb) sub(8)5 phase change memory thin films under a moving continuous-wave laser initialization are studied by using spectroscopic ellipsometry and high-resolution transmission electron microscopy. The dependence of complex refractive index, dielectric functions, absorption coefficient, and optical band gap of the films on its crystallization extents formed by the different initialization laser power are analyzed in detail. The structural change from as-deposited amorphous phase to distorted rhombohedra-Sb-like crystalline structure with the increase of initialization laser power is clearly observed with sub-nanometer resolution. The optical and dielectric constants, the relationship between them, and the local atomic arrangements of this new phase change material can help explain the phase change mechanism and design the practical phase change memory devices.</abstract><doi>10.1016/j.jallcom.2011.02.031</doi></addata></record> |
| fulltext | fulltext |
| identifier | ISSN: 0925-8388 |
| ispartof | Journal of alloys and compounds, 2011-04, Vol.509 (16), p.5050-5054 |
| issn | 0925-8388 |
| language | eng |
| recordid | cdi_proquest_miscellaneous_1671261443 |
| source | Elsevier ScienceDirect Journals Complete |
| subjects | Alloys Data storage Dielectric properties Dielectrics Ellipsometry Lasers Memory devices Phase change Thin films |
| title | Changes of optical, dielectric, and structural properties of Si sub(15Sb) sub(8)5 phase change memory thin films under different initializing laser power |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-02-13T01%3A52%3A13IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Changes%20of%20optical,%20dielectric,%20and%20structural%20properties%20of%20Si%20sub(15Sb)%20sub(8)5%20phase%20change%20memory%20thin%20films%20under%20different%20initializing%20laser%20power&rft.jtitle=Journal%20of%20alloys%20and%20compounds&rft.au=Huang,%20Huan&rft.date=2011-04-21&rft.volume=509&rft.issue=16&rft.spage=5050&rft.epage=5054&rft.pages=5050-5054&rft.issn=0925-8388&rft_id=info:doi/10.1016/j.jallcom.2011.02.031&rft_dat=%3Cproquest%3E1671261443%3C/proquest%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_pqid=1671261443&rft_id=info:pmid/&rfr_iscdi=true |