Annealing and recrystallization of amorphous ZnO thin films deposited under cryogenic conditions by pulsed laser deposition
This article deals with the annealing of amorphous ZnO thin films prepared by pulsed laser deposition (PLD) under cryogenic conditions. The substrate holder was cooled by liquid nitrogen. X-ray diffraction analysis evidenced that as-deposited films had amorphous structures: analysis by scanning elec...
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| Veröffentlicht in: | Thin solid films 2011-11, Vol.520 (2), p.866-870 |
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| creator | Bruncko, J. Vincze, A. Netrvalova, M. Šutta, P. Hasko, D. Michalka, M. |
| description | This article deals with the annealing of amorphous ZnO thin films prepared by pulsed laser deposition (PLD) under cryogenic conditions. The substrate holder was cooled by liquid nitrogen. X-ray diffraction analysis evidenced that as-deposited films had amorphous structures: analysis by scanning electron microscopy (SEM) revealed their fine grained surface and inner structure. Annealing at temperatures in the range of 200–800
°C resulted in a transition in the thin film crystal structure from amorphous to polycrystalline. Various properties of the ZnO films were found depending on the recrystallization temperature. In depth investigations employing SEM, X-ray diffraction, atomic force microscopy and secondary ion mass spectroscopy provided comparisons of the recrystallizations of undoped ZnO thin films during the phase transition processes from amorphous to hexagonal wurtzite structures. |
| doi_str_mv | 10.1016/j.tsf.2011.04.202 |
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°C resulted in a transition in the thin film crystal structure from amorphous to polycrystalline. Various properties of the ZnO films were found depending on the recrystallization temperature. In depth investigations employing SEM, X-ray diffraction, atomic force microscopy and secondary ion mass spectroscopy provided comparisons of the recrystallizations of undoped ZnO thin films during the phase transition processes from amorphous to hexagonal wurtzite structures.</description><identifier>ISSN: 0040-6090</identifier><identifier>EISSN: 1879-2731</identifier><identifier>DOI: 10.1016/j.tsf.2011.04.202</identifier><identifier>CODEN: THSFAP</identifier><language>eng</language><publisher>Amsterdam: Elsevier B.V</publisher><subject>Amorphous structure ; Annealing ; Condensed matter: structure, mechanical and thermal properties ; Cross-disciplinary physics: materials science; rheology ; Cryogenic temperature ; Diffraction ; Electron, ion, and scanning probe microscopy ; Exact sciences and technology ; Laser deposition ; Materials science ; Methods of deposition of films and coatings; film growth and epitaxy ; Physics ; Pulsed laser deposition ; Recrystallization ; Scanning electron microscopy ; Structure and morphology; thickness ; Structure of solids and liquids; crystallography ; Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties) ; Thin film structure and morphology ; Thin films ; X-rays ; Zinc oxide</subject><ispartof>Thin solid films, 2011-11, Vol.520 (2), p.866-870</ispartof><rights>2011 Elsevier B.V.</rights><rights>2015 INIST-CNRS</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c426t-6a555d71a7e5dffbd90d31f89b566ae8fb0ab0823ac72885043ddcdebe33aa223</citedby><cites>FETCH-LOGICAL-c426t-6a555d71a7e5dffbd90d31f89b566ae8fb0ab0823ac72885043ddcdebe33aa223</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://dx.doi.org/10.1016/j.tsf.2011.04.202$$EHTML$$P50$$Gelsevier$$H</linktohtml><link.rule.ids>310,311,315,782,786,791,792,3552,23937,23938,25147,27931,27932,46002</link.rule.ids><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=25512241$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>Bruncko, J.</creatorcontrib><creatorcontrib>Vincze, A.</creatorcontrib><creatorcontrib>Netrvalova, M.</creatorcontrib><creatorcontrib>Šutta, P.</creatorcontrib><creatorcontrib>Hasko, D.</creatorcontrib><creatorcontrib>Michalka, M.</creatorcontrib><title>Annealing and recrystallization of amorphous ZnO thin films deposited under cryogenic conditions by pulsed laser deposition</title><title>Thin solid films</title><description>This article deals with the annealing of amorphous ZnO thin films prepared by pulsed laser deposition (PLD) under cryogenic conditions. The substrate holder was cooled by liquid nitrogen. X-ray diffraction analysis evidenced that as-deposited films had amorphous structures: analysis by scanning electron microscopy (SEM) revealed their fine grained surface and inner structure. Annealing at temperatures in the range of 200–800
°C resulted in a transition in the thin film crystal structure from amorphous to polycrystalline. Various properties of the ZnO films were found depending on the recrystallization temperature. 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thickness</subject><subject>Structure of solids and liquids; crystallography</subject><subject>Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties)</subject><subject>Thin film structure and morphology</subject><subject>Thin films</subject><subject>X-rays</subject><subject>Zinc oxide</subject><issn>0040-6090</issn><issn>1879-2731</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2011</creationdate><recordtype>article</recordtype><recordid>eNp9kDFvFDEQhS1EJI6QH5DODRLNXsbe9e6eqKKIQKRIaaBJY83a48Qnn73Ye0gHfx6f7kRJ9Yr53hu9x9i1gLUA0d9s10txawlCrKGrKt-wlRiHTSOHVrxlK4AOmh428I69L2ULAELKdsX-3MZIGHx84Rgtz2TyoSwYgv-Ni0-RJ8dxl_L8mvaFP8cnvrz6yJ0Pu8Itzan4hSzfR0uZV296oegNNylaf_QXPh34vA-lQgFLhc6mevvALhzWy9VZL9mP-y_f7741j09fH-5uHxvTyX5pelRK2UHgQMo6N9kN2Fa4cTOpvkca3QQ4wShbNIMcRwVda62xNFHbItaWl-zTKXfO6eeeyqJ3vhgKASPVVlr0g5CqeruKihNqciolk9Nz9jvMBy1AH4fWW12H1sehNXRVj_Efz_FYDAaXMRpf_hmlUnXqTlTu84mj2vWXp6yL8RQNWV9nX7RN_j9f_gJQYZa_</recordid><startdate>20111101</startdate><enddate>20111101</enddate><creator>Bruncko, J.</creator><creator>Vincze, A.</creator><creator>Netrvalova, M.</creator><creator>Šutta, P.</creator><creator>Hasko, D.</creator><creator>Michalka, M.</creator><general>Elsevier B.V</general><general>Elsevier</general><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7SR</scope><scope>7U5</scope><scope>8BQ</scope><scope>8FD</scope><scope>H8D</scope><scope>JG9</scope><scope>L7M</scope></search><sort><creationdate>20111101</creationdate><title>Annealing and recrystallization of amorphous ZnO thin films deposited under cryogenic conditions by pulsed laser deposition</title><author>Bruncko, J. ; 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thickness</topic><topic>Structure of solids and liquids; crystallography</topic><topic>Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties)</topic><topic>Thin film structure and morphology</topic><topic>Thin films</topic><topic>X-rays</topic><topic>Zinc oxide</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Bruncko, J.</creatorcontrib><creatorcontrib>Vincze, A.</creatorcontrib><creatorcontrib>Netrvalova, M.</creatorcontrib><creatorcontrib>Šutta, P.</creatorcontrib><creatorcontrib>Hasko, D.</creatorcontrib><creatorcontrib>Michalka, M.</creatorcontrib><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>Engineered Materials Abstracts</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>METADEX</collection><collection>Technology Research Database</collection><collection>Aerospace Database</collection><collection>Materials Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Thin solid films</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Bruncko, J.</au><au>Vincze, A.</au><au>Netrvalova, M.</au><au>Šutta, P.</au><au>Hasko, D.</au><au>Michalka, M.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Annealing and recrystallization of amorphous ZnO thin films deposited under cryogenic conditions by pulsed laser deposition</atitle><jtitle>Thin solid films</jtitle><date>2011-11-01</date><risdate>2011</risdate><volume>520</volume><issue>2</issue><spage>866</spage><epage>870</epage><pages>866-870</pages><issn>0040-6090</issn><eissn>1879-2731</eissn><coden>THSFAP</coden><abstract>This article deals with the annealing of amorphous ZnO thin films prepared by pulsed laser deposition (PLD) under cryogenic conditions. 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°C resulted in a transition in the thin film crystal structure from amorphous to polycrystalline. Various properties of the ZnO films were found depending on the recrystallization temperature. In depth investigations employing SEM, X-ray diffraction, atomic force microscopy and secondary ion mass spectroscopy provided comparisons of the recrystallizations of undoped ZnO thin films during the phase transition processes from amorphous to hexagonal wurtzite structures.</abstract><cop>Amsterdam</cop><pub>Elsevier B.V</pub><doi>10.1016/j.tsf.2011.04.202</doi><tpages>5</tpages></addata></record> |
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| subjects | Amorphous structure Annealing Condensed matter: structure, mechanical and thermal properties Cross-disciplinary physics: materials science rheology Cryogenic temperature Diffraction Electron, ion, and scanning probe microscopy Exact sciences and technology Laser deposition Materials science Methods of deposition of films and coatings film growth and epitaxy Physics Pulsed laser deposition Recrystallization Scanning electron microscopy Structure and morphology thickness Structure of solids and liquids crystallography Surfaces and interfaces thin films and whiskers (structure and nonelectronic properties) Thin film structure and morphology Thin films X-rays Zinc oxide |
| title | Annealing and recrystallization of amorphous ZnO thin films deposited under cryogenic conditions by pulsed laser deposition |
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