Light-Emitting Field-Effect Transistors Consisting of Bilayer-Crystal Organic Semiconductors

A novel device structure for organic light‐emitting field‐effect transistors has been developed. The devices comprise bilayer‐crystal organic semiconductors of a p‐type and an n‐type. The pn‐junction can readily be formed by successively laminating two crystals on top of a gate insulator. This struc...

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Veröffentlicht in:	Advanced functional materials 2011-08, Vol.21 (15), p.2854-2860
Hauptverfasser:	Kajiwara, Kentaro, Terasaki, Kohei, Yamao, Takeshi, Hotta, Shu
Format:	Artikel
Sprache:	eng
Schlagworte:	AC gate bias bilayer-crystal devices Carrier transport Devices external quantum efficiency Gates Insulators organic light-emitting field-effect transistors (OLEFETs) Organic semiconductors Semiconductor devices thiophene/phenylene co-oligomers Transistors Voltage
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