Performance enhancement of ring oscillators and transimpedance amplifiers by package strain
The appropriate external stress can enhance a device and circuit performance. The 7.4% speed enhancement is achieved for the 250-nm node ring oscillator under uniaxial tensile strain for a mutually perpendicular layout of the NFET and the PFET. The speed enhancement is less than 1.5% for the convent...
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Veröffentlicht in: | IEEE transactions on electron devices 2006-04, Vol.53 (4), p.724-729 |
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container_title | IEEE transactions on electron devices |
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creator | Feng Yuan, Feng Yuan Ching-Fang Huang, Ching-Fang Huang Ming-Hsin Yu, Ming-Hsin Yu Chee Wee Liu, Chee Wee Liu |
description | The appropriate external stress can enhance a device and circuit performance. The 7.4% speed enhancement is achieved for the 250-nm node ring oscillator under uniaxial tensile strain for a mutually perpendicular layout of the NFET and the PFET. The speed enhancement is less than 1.5% for the conventional parallel layout of the NFET and the PFET. A 180-nm node transimpedance amplifier has a /spl sim/ 5% bandwidth enhancement using a biaxial tensile strain or a uniaxial tensile strain parallel to the NFET channel to tune the peaking frequency of active inductor in the circuit. The package strain can provide an extra useful parameter for the future digital and analog circuit design. |
doi_str_mv | 10.1109/TED.2006.870568 |
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The 7.4% speed enhancement is achieved for the 250-nm node ring oscillator under uniaxial tensile strain for a mutually perpendicular layout of the NFET and the PFET. The speed enhancement is less than 1.5% for the conventional parallel layout of the NFET and the PFET. A 180-nm node transimpedance amplifier has a /spl sim/ 5% bandwidth enhancement using a biaxial tensile strain or a uniaxial tensile strain parallel to the NFET channel to tune the peaking frequency of active inductor in the circuit. The package strain can provide an extra useful parameter for the future digital and analog circuit design.</description><identifier>ISSN: 0018-9383</identifier><identifier>EISSN: 1557-9646</identifier><identifier>DOI: 10.1109/TED.2006.870568</identifier><identifier>CODEN: IETDAI</identifier><language>eng</language><publisher>New York, NY: IEEE</publisher><subject>Amplifiers ; Applied sciences ; Channels ; Circuit properties ; Circuits ; Design. Technologies. Operation analysis. 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The 7.4% speed enhancement is achieved for the 250-nm node ring oscillator under uniaxial tensile strain for a mutually perpendicular layout of the NFET and the PFET. The speed enhancement is less than 1.5% for the conventional parallel layout of the NFET and the PFET. A 180-nm node transimpedance amplifier has a /spl sim/ 5% bandwidth enhancement using a biaxial tensile strain or a uniaxial tensile strain parallel to the NFET channel to tune the peaking frequency of active inductor in the circuit. The package strain can provide an extra useful parameter for the future digital and analog circuit design.</description><subject>Amplifiers</subject><subject>Applied sciences</subject><subject>Channels</subject><subject>Circuit properties</subject><subject>Circuits</subject><subject>Design. Technologies. Operation analysis. Testing</subject><subject>Devices</subject><subject>Digital</subject><subject>Electric, optical and optoelectronic circuits</subject><subject>Electronic circuits</subject><subject>Electronics</subject><subject>Exact sciences and technology</subject><subject>Integrated circuit layout</subject><subject>Integrated circuit packaging</subject><subject>Integrated circuits</subject><subject>Layout direction</subject><subject>Magnetic devices</subject><subject>mechanical strain</subject><subject>MOSFETs</subject><subject>Oscillators</subject><subject>Oscillators, resonators, synthetizers</subject><subject>package strain</subject><subject>Packages</subject><subject>ring oscillator</subject><subject>Semiconductor electronics. Microelectronics. Optoelectronics. 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Testing</topic><topic>Devices</topic><topic>Digital</topic><topic>Electric, optical and optoelectronic circuits</topic><topic>Electronic circuits</topic><topic>Electronics</topic><topic>Exact sciences and technology</topic><topic>Integrated circuit layout</topic><topic>Integrated circuit packaging</topic><topic>Integrated circuits</topic><topic>Layout direction</topic><topic>Magnetic devices</topic><topic>mechanical strain</topic><topic>MOSFETs</topic><topic>Oscillators</topic><topic>Oscillators, resonators, synthetizers</topic><topic>package strain</topic><topic>Packages</topic><topic>ring oscillator</topic><topic>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</topic><topic>Strain</topic><topic>transimpedance amplifier (TIA)</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Feng Yuan, Feng Yuan</creatorcontrib><creatorcontrib>Ching-Fang Huang, Ching-Fang Huang</creatorcontrib><creatorcontrib>Ming-Hsin Yu, Ming-Hsin Yu</creatorcontrib><creatorcontrib>Chee Wee Liu, Chee Wee Liu</creatorcontrib><collection>IEEE All-Society Periodicals Package (ASPP) 2005-present</collection><collection>IEEE All-Society Periodicals Package (ASPP) 1998-Present</collection><collection>IEEE Electronic Library (IEL)</collection><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>ANTE: Abstracts in New Technology & Engineering</collection><collection>Engineering Research Database</collection><jtitle>IEEE transactions on electron devices</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Feng Yuan, Feng Yuan</au><au>Ching-Fang Huang, Ching-Fang Huang</au><au>Ming-Hsin Yu, Ming-Hsin Yu</au><au>Chee Wee Liu, Chee Wee Liu</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Performance enhancement of ring oscillators and transimpedance amplifiers by package strain</atitle><jtitle>IEEE transactions on electron devices</jtitle><stitle>TED</stitle><date>2006-04-01</date><risdate>2006</risdate><volume>53</volume><issue>4</issue><spage>724</spage><epage>729</epage><pages>724-729</pages><issn>0018-9383</issn><eissn>1557-9646</eissn><coden>IETDAI</coden><abstract>The appropriate external stress can enhance a device and circuit performance. The 7.4% speed enhancement is achieved for the 250-nm node ring oscillator under uniaxial tensile strain for a mutually perpendicular layout of the NFET and the PFET. The speed enhancement is less than 1.5% for the conventional parallel layout of the NFET and the PFET. A 180-nm node transimpedance amplifier has a /spl sim/ 5% bandwidth enhancement using a biaxial tensile strain or a uniaxial tensile strain parallel to the NFET channel to tune the peaking frequency of active inductor in the circuit. The package strain can provide an extra useful parameter for the future digital and analog circuit design.</abstract><cop>New York, NY</cop><pub>IEEE</pub><doi>10.1109/TED.2006.870568</doi><tpages>6</tpages></addata></record> |
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subjects | Amplifiers Applied sciences Channels Circuit properties Circuits Design. Technologies. Operation analysis. Testing Devices Digital Electric, optical and optoelectronic circuits Electronic circuits Electronics Exact sciences and technology Integrated circuit layout Integrated circuit packaging Integrated circuits Layout direction Magnetic devices mechanical strain MOSFETs Oscillators Oscillators, resonators, synthetizers package strain Packages ring oscillator Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Strain transimpedance amplifier (TIA) |
title | Performance enhancement of ring oscillators and transimpedance amplifiers by package strain |
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