A Low Power 77 GHz Low Noise Amplifier With an Area Efficient RF-ESD Protection in 65 nm CMOS

An area efficient electrostatic discharge (ESD) protection structure is presented to protect the RF input PAD of a 77 GHz low noise amplifier in a 65 nm CMOS process. The results show a measured small signal gain of 10.5 dB at 77 GHz with 37 mW dc power consumption. The measured noise figure at 77 G...

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