Formation of microcrystalline silicon films using rapid crystal aluminum induced crystallization under low-temperature rapid thermal annealing

The process of obtaining thin film solar cells using the method of aluminum-induced crystallization under rapid thermal annealing (RTA) was investigated. 200-nm-thick amorphous Si (a-Si) film was deposited on a glass substrate using an ultra-high vacuum ion beam sputtering system. A 50-nm-thick crys...

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Veröffentlicht in:	Thin solid films 2010-09, Vol.518 (23), p.6966-6971
Hauptverfasser:	Peng, Cheng-Chang, Chung, Chen-Kuei, Lin, Jen-Fin
Format:	Artikel
Sprache:	eng
Schlagworte:	Al oxide Aluminum Aluminum-induced crystallization Annealing Condensed matter: structure, mechanical and thermal properties Cross-disciplinary physics: materials science rheology Crystallization Crystals Deposition Diffusion Diffusion interface formation Exact sciences and technology Ion and electron beam-assisted deposition ion plating Ion beam sputtering Low-temperature annealing Materials science Methods of deposition of films and coatings film growth and epitaxy Microcrystalline Si Physics Rapid thermal annealing Silicon Solid surfaces and solid-solid interfaces Structure and morphology thickness Surface energy Surfaces and interfaces thin films and whiskers (structure and nonelectronic properties) Thin film structure and morphology Thin films
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