Composition and morphology of fluorinated anodic oxides on InAs (1 1 1)A surface

Composition and morphology of fluorinated anodic oxides on InAs (1 1 1)A surface

The composition and morphology of fluorinated anodic oxide (FAO) films grown on InAs (1 1 1)A in alkaline aqueous (pH 11.5) and acid waterless (pH 1.5) electrolytes are studied by means of X-ray photoelectron spectroscopy (XPS), atomic force microscopy (AFM) and high resolution transmission electron...

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Veröffentlicht in:Applied surface science 2010-07, Vol.256 (19), p.5722-5726
Hauptverfasser: Valisheva, N.A., Tereshchenko, O.E., Prosvirin, I.P., Levtsova, T.A., Rodjakina, E.E., Kovchavcev, A.V.
Format: Artikel
Sprache:eng
Schlagworte:
Anodic
Anodic oxide
Atomic force microscopy
Fermi surfaces
Fluorination
InAs
Indium arsenides
Interface
Morphology
Oxides
Passivation
Phase composition
Surface states
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Beschreibung
Zusammenfassung:The composition and morphology of fluorinated anodic oxide (FAO) films grown on InAs (1 1 1)A in alkaline aqueous (pH 11.5) and acid waterless (pH 1.5) electrolytes are studied by means of X-ray photoelectron spectroscopy (XPS), atomic force microscopy (AFM) and high resolution transmission electron microscopy (HRTEM) in order to reveal the passivation mechanism of fluorine on the FAO/InAs(1 1 1)A interface. The formation of the highest oxidation form of As +5 and passivation of defects in the FAO layers during the fluorination process explain the reduction of the density of surface states and unpinning of the Fermi level on the fluorinated AO/InAs(1 1 1)A interface.
ISSN:0169-4332
1873-5584
DOI:10.1016/j.apsusc.2010.03.100