Effect of SiN sub(x) Gate Dielectric Deposition Power and Temperature on a-Si:H TFT Stability

The stability of thin-film transistors (TFTs) of hydrogenated amorphous-silicon (a-Si:H) against gate-bias stress is improved by raising the deposition power and temperature of the silicon nitride gate dielectric. We studied the effects of power density between 22 and 110 mW/cm super(2) and temperat...

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Veröffentlicht in:	IEEE electron device letters 2007-01, Vol.28 (7)
Hauptverfasser:	Kattamis, A Z, Cherenack, KH, Hekmatshoar, B, Cheng, I-Chun, Gleskova, H, Sturm, J C, Wagner, S
Format:	Artikel
Sprache:	eng
Schlagworte:	Density Deposition Dielectrics Gates Semiconductor devices Silicon nitride Stability Thin film transistors
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creator	Kattamis, A Z Cherenack, KH Hekmatshoar, B Cheng, I-Chun Gleskova, H Sturm, J C Wagner, S
description	The stability of thin-film transistors (TFTs) of hydrogenated amorphous-silicon (a-Si:H) against gate-bias stress is improved by raising the deposition power and temperature of the silicon nitride gate dielectric. We studied the effects of power density between 22 and 110 mW/cm super(2) and temperature between 150degC and 300degC . The time needed to shift the threshold voltage by 2 V varies by a factor of 12 between low power and low temperature, and high power and high temperature. These results highlight the importance of fabricating a-Si:H TFTs on flexible plastic with the SiN sub(x) gate dielectric deposited at the highest possible power and temperature.
doi_str_mv	10.1109/LED.2007.900078
format	Article
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subjects	Density Deposition Dielectrics Gates Semiconductor devices Silicon nitride Stability Thin film transistors
title	Effect of SiN sub(x) Gate Dielectric Deposition Power and Temperature on a-Si:H TFT Stability
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