Electrical Characteristics of Driver LSI with 35km Thickness for Flexible Display
Electrical characteristics of the mechanically flexible driver LSI as thin as 35km mounted directly on a flexible display panel were precisely analyzed. The high-voltage transistors on this LSI show the current decrease by 10-30% in high voltage region, comparing with that of an ordinary thickness L...
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| Veröffentlicht in: | IEICE transactions on electronics 2008-01 (10), p.1570-1575 |
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| creator | Asakawa, Michihiro Nakashima, Takuro Saeki, Tsubasa Hattori, Reiji Yokoo, Akihiko Sakurai, Ryo Nihei, Norio Masuda, Yoshitomo |
| description | Electrical characteristics of the mechanically flexible driver LSI as thin as 35km mounted directly on a flexible display panel were precisely analyzed. The high-voltage transistors on this LSI show the current decrease by 10-30% in high voltage region, comparing with that of an ordinary thickness LSI. These phenomena can be associated with a self-heating effect. We considered the thermal diffusion on the thin chip by changing material of the measurement stage. Moreover, we analyzed the transistor characteristics on the thin chip under convex and concave bending conditions. The drain current change by piezoresistive effect was observed. |
| doi_str_mv | 10.1093/ietele/e91-c.10.1570 |
| format | Article |
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The drain current change by piezoresistive effect was observed.</description><identifier>ISSN: 1745-1353</identifier><identifier>DOI: 10.1093/ietele/e91-c.10.1570</identifier><language>eng</language><subject>Bending ; Chips ; Drains ; Drivers ; Electronics ; Large scale integration ; Semiconductor devices ; Transistors</subject><ispartof>IEICE transactions on electronics, 2008-01 (10), p.1570-1575</ispartof><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,776,780,27903,27904</link.rule.ids></links><search><creatorcontrib>Asakawa, Michihiro</creatorcontrib><creatorcontrib>Nakashima, Takuro</creatorcontrib><creatorcontrib>Saeki, Tsubasa</creatorcontrib><creatorcontrib>Hattori, Reiji</creatorcontrib><creatorcontrib>Yokoo, Akihiko</creatorcontrib><creatorcontrib>Sakurai, Ryo</creatorcontrib><creatorcontrib>Nihei, Norio</creatorcontrib><creatorcontrib>Masuda, Yoshitomo</creatorcontrib><title>Electrical Characteristics of Driver LSI with 35km Thickness for Flexible Display</title><title>IEICE transactions on electronics</title><description>Electrical characteristics of the mechanically flexible driver LSI as thin as 35km mounted directly on a flexible display panel were precisely analyzed. 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The high-voltage transistors on this LSI show the current decrease by 10-30% in high voltage region, comparing with that of an ordinary thickness LSI. These phenomena can be associated with a self-heating effect. We considered the thermal diffusion on the thin chip by changing material of the measurement stage. Moreover, we analyzed the transistor characteristics on the thin chip under convex and concave bending conditions. The drain current change by piezoresistive effect was observed.</abstract><doi>10.1093/ietele/e91-c.10.1570</doi></addata></record> |
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| ispartof | IEICE transactions on electronics, 2008-01 (10), p.1570-1575 |
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| source | J-STAGE (Japan Science & Technology Information Aggregator, Electronic) Freely Available Titles - Japanese |
| subjects | Bending Chips Drains Drivers Electronics Large scale integration Semiconductor devices Transistors |
| title | Electrical Characteristics of Driver LSI with 35km Thickness for Flexible Display |
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