Single crystalline aluminum nanowires with ideal resistivity

Single crystalline aluminum nanowires with ideal resistivity

We present the stress-induced synthesis of aluminum nanowires having almost perfect crystallinity. Their resistivity is comparable to the lowest bulk value of aluminum, and thus unprecedentedly smaller than the ones observed in other metal nanostructures. We analyze the measured resistivity using th...

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Veröffentlicht in:Scripta materialia 2010-11, Vol.63 (10), p.1009-1012
Hauptverfasser: Lee, J.W., Kang, M.G., Kim, B.-S., Hong, B.H., Whang, D., Hwang, S.W.
Format: Artikel
Sprache:eng
Schlagworte:
Aluminum
Crystallinity
Electrical resistivity
Electrical resistivity/conductivity
Grain size
Nanocomposites
Nanomaterials
Nanostructure
Nanowires
Stress-induced growth
Wire
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Beschreibung
Zusammenfassung:We present the stress-induced synthesis of aluminum nanowires having almost perfect crystallinity. Their resistivity is comparable to the lowest bulk value of aluminum, and thus unprecedentedly smaller than the ones observed in other metal nanostructures. We analyze the measured resistivity using the standard theory of scattering in metal wires, and the observed resistivity values are consistent with the infinite average grain size.
ISSN:1359-6462
1872-8456
DOI:10.1016/j.scriptamat.2010.07.026