Thickness dependent microstructural changes in La0.5Ca0.5MnO3 thin films deposited on (111) SrTiO3

Thickness dependent microstructural changes in La0.5Ca0.5MnO3 thin films deposited on (111) SrTiO3

The epitaxial strain can modify the physical properties of complex oxide thin films considerably. The strain effect is expected to be less pronounced for relatively thick films and the physical properties should resemble to the bulk material. However, it has been recently observed that the electroni...

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Veröffentlicht in:Thin solid films 2010-06, Vol.518 (16), p.4667-4669
Hauptverfasser: AYDOGDU, G. H, KURU, Y, NELAYAH, J, VAN AKEN, P. A, HABERMEIER, H.-U
Format: Artikel
Sprache:eng
Schlagworte:
Condensed matter: electronic structure, electrical, magnetic, and optical properties
Condensed matter: structure, mechanical and thermal properties
Deposition
Diffraction
Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures
Exact sciences and technology
Magnetic properties
Microstructure
Oxides
Physical properties
Physics
Strain
Strontium titanates
Structure and morphology
thickness
Surface and interface electron states
Surfaces and interfaces
thin films and whiskers (structure and nonelectronic properties)
Thin film structure and morphology
Thin films
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Zusammenfassung:The epitaxial strain can modify the physical properties of complex oxide thin films considerably. The strain effect is expected to be less pronounced for relatively thick films and the physical properties should resemble to the bulk material. However, it has been recently observed that the electronic and magnetic properties of La0.5Ca0.5MnO3 thin films deposited on (111) SrTiO3 substrates thicker than a threshold value differ considerably from the bulk material. This observation is a hint for some interesting microstructural features in these films. In the present study, the microstructure of La0.5Ca0.5MnO3 thin films on (111) SrTiO3 substrates is investigated by X-ray diffraction and high resolution transmission electron microscopy.
ISSN:0040-6090
1879-2731
DOI:10.1016/j.tsf.2009.12.055