DLTFS Investigation of Ingaasn/Gaas Tandem Solar Cell

In this paper authors present the results of identification of emission and capture processes in tandem solar cell structures based on quaternary InGaAsN semiconductor alloys by DLTFS (Deep Level Transient Fourier Spectroscopy) and by ana- lytical evaluation processes. The energies of five trap leve...

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Veröffentlicht in:	Journal of Electrical Engineering 2014-09, Vol.65 (5), p.271-276
Hauptverfasser:	Kósa, Arád, Stuchlíková, L’ubica, Dawidowski, Wojciech, Jakuš, Juraj, Sciana, Beata, Radziewicz, Damian, Pucicki, Damian, Harmatha, Ladislav, Kováč, Jaroslav, Tłaczala, Marek
Format:	Artikel
Sprache:	eng
Schlagworte:	Alloys deep energy levels deep level transient Fourier spectroscopy Fourier analysis Gallium arsenide Gallium arsenides Mathematical analysis Photovoltaic cells Semiconductors Solar cells tandem solar cell
Online-Zugang:	Volltext
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