Formation of nanodimensional structures on surfaces of GaAs and Si by means of ion implantation

We obtained the two‐ and three‐component nanostructures by means of ion implantation of low‐energy Co and Ba ions in the surface layers of Si and GaAs in combination with the post‐implantation annealing. We show that flat shaped nanocrystals (nanoislands) of two‐ and three‐component composition, Co‐...

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Veröffentlicht in:	Physica status solidi. C 2015-01, Vol.12 (1-2), p.89-93
Hauptverfasser:	Donaev, S. B., Djurabekova, F., Tashmukhamedova, D. A., Umirzakov, B. E.
Format:	Artikel
Sprache:	eng
Schlagworte:	Formations GaAs Gallium arsenide Gallium arsenides implantation Ion implantation Nanocrystals nanodimensional structures Nanostructure Si surfaces Silicon Solid state physics
Online-Zugang:	Volltext
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