Effects of NH3 annealing on interface and electrical properties of Gd-doped HfO2/Si stack
Effects of NH3 rapid thermal annealing （RTA） on the interface and electrical properties of Gd-doped HfO2 （GDH）/Si stack were investigated. The process of NH3 annealing could significantly affect the crystallization, stoichiometric properties of GDH film and the interface characteristic of GDH/Si sys...
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| Veröffentlicht in: | Journal of rare earths 2013-04, Vol.31 (4), p.395-399 |
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| container_end_page | 399 |
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| container_issue | 4 |
| container_start_page | 395 |
| container_title | Journal of rare earths |
| container_volume | 31 |
| creator | 杨萌萌 屠海令 杜军 魏峰 熊玉华 赵鸿斌 |
| description | Effects of NH3 rapid thermal annealing （RTA） on the interface and electrical properties of Gd-doped HfO2 （GDH）/Si stack were investigated. The process of NH3 annealing could significantly affect the crystallization, stoichiometric properties of GDH film and the interface characteristic of GDH/Si system. NH3 annealing also led to the decrease of interface layer thickness. The leakage current density of Pt/GDH/p-Si MOS capacitor without RTA was 2× 10-3 A/cm2. After NH3 annealing, the leakage current density was about one order of magnitude lower （3.9× 104 A/cm2）. The effective permittivity extracted from the C-V curves was -14.1 and 13.1 for samples without and with RTA, respectively. |
| doi_str_mv | 10.1016/s1002-0721(12)60293-2 |
| format | Article |
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The process of NH3 annealing could significantly affect the crystallization, stoichiometric properties of GDH film and the interface characteristic of GDH/Si system. NH3 annealing also led to the decrease of interface layer thickness. The leakage current density of Pt/GDH/p-Si MOS capacitor without RTA was 2× 10-3 A/cm2. After NH3 annealing, the leakage current density was about one order of magnitude lower （3.9× 104 A/cm2）. The effective permittivity extracted from the C-V curves was -14.1 and 13.1 for samples without and with RTA, respectively.</description><identifier>ISSN: 1002-0721</identifier><identifier>EISSN: 2509-4963</identifier><identifier>DOI: 10.1016/s1002-0721(12)60293-2</identifier><language>eng</language><publisher>Elsevier B.V</publisher><subject>Annealing ; Density ; Electrical properties ; Gd-doped HfO2 ; Hafnium oxide ; high-k ; interface ; Leakage current ; MOS电容器 ; NH3 ; NH3 annealing ; Rare earth metals ; rare earths ; Silicon ; Stacks ; 堆栈 ; 快速热退火 ; 接口特性 ; 掺钆 ; 漏电流密度 ; 电气性能</subject><ispartof>Journal of rare earths, 2013-04, Vol.31 (4), p.395-399</ispartof><rights>2013 The Chinese Society of Rare Earths</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c434t-d7456fa3f1295bad2f0ea5f576fc1a9aca59aeceef879f211efea759c2f2f363</citedby><cites>FETCH-LOGICAL-c434t-d7456fa3f1295bad2f0ea5f576fc1a9aca59aeceef879f211efea759c2f2f363</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Uhttp://image.cqvip.com/vip1000/qk/84120X/84120X.jpg</thumbnail><linktohtml>$$Uhttps://www.sciencedirect.com/science/article/pii/S1002072112602932$$EHTML$$P50$$Gelsevier$$H</linktohtml><link.rule.ids>314,776,780,3537,27901,27902,65306</link.rule.ids></links><search><creatorcontrib>杨萌萌 屠海令 杜军 魏峰 熊玉华 赵鸿斌</creatorcontrib><title>Effects of NH3 annealing on interface and electrical properties of Gd-doped HfO2/Si stack</title><title>Journal of rare earths</title><addtitle>Journal of Rare Earths</addtitle><description>Effects of NH3 rapid thermal annealing （RTA） on the interface and electrical properties of Gd-doped HfO2 （GDH）/Si stack were investigated. The process of NH3 annealing could significantly affect the crystallization, stoichiometric properties of GDH film and the interface characteristic of GDH/Si system. NH3 annealing also led to the decrease of interface layer thickness. The leakage current density of Pt/GDH/p-Si MOS capacitor without RTA was 2× 10-3 A/cm2. After NH3 annealing, the leakage current density was about one order of magnitude lower （3.9× 104 A/cm2）. The effective permittivity extracted from the C-V curves was -14.1 and 13.1 for samples without and with RTA, respectively.</description><subject>Annealing</subject><subject>Density</subject><subject>Electrical properties</subject><subject>Gd-doped HfO2</subject><subject>Hafnium oxide</subject><subject>high-k</subject><subject>interface</subject><subject>Leakage current</subject><subject>MOS电容器</subject><subject>NH3</subject><subject>NH3 annealing</subject><subject>Rare earth metals</subject><subject>rare earths</subject><subject>Silicon</subject><subject>Stacks</subject><subject>堆栈</subject><subject>快速热退火</subject><subject>接口特性</subject><subject>掺钆</subject><subject>漏电流密度</subject><subject>电气性能</subject><issn>1002-0721</issn><issn>2509-4963</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2013</creationdate><recordtype>article</recordtype><recordid>eNqFkE1LAzEQhoMoWD9-ghBv9bA2H5tscxIpaoViD3rxFGJ2pkbX3TbZCv57s1a8ehpmeN93Zh5Czji75IzrSeKMiYJVgo-5uNBMGFmIPTISipmiNFruk9Gf5JAcpfTGmKyUYSPyfIMIvk-0Q_owl9S1LbgmtCvatTS0PUR0HvK4ptBkYQzeNXQduzXEPsCP764u6tzXdI5LMXkMNPXOv5-QA3RNgtPfekyebm-eZvNisby7n10vCl_Ksi_qqlQanUQujHpxtUAGTqGqNHrujPNOGQceAKeVQcE5ILh8uxcoUGp5TMa72HzTZguptx8heWga10K3TZZrbaY5rRqkaif1sUspAtp1DB8uflnO7EDSPg6Y7IDJcmF_SFqRfVc7H-Q3PgNEm3yA1kMdYkZi6y78m3D-u_m1a1ebjPdvdamUMkZK-Q0dyYYp</recordid><startdate>20130401</startdate><enddate>20130401</enddate><creator>杨萌萌 屠海令 杜军 魏峰 熊玉华 赵鸿斌</creator><general>Elsevier B.V</general><scope>2RA</scope><scope>92L</scope><scope>CQIGP</scope><scope>W92</scope><scope>~WA</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7U5</scope><scope>8BQ</scope><scope>8FD</scope><scope>JG9</scope><scope>L7M</scope></search><sort><creationdate>20130401</creationdate><title>Effects of NH3 annealing on interface and electrical properties of Gd-doped HfO2/Si stack</title><author>杨萌萌 屠海令 杜军 魏峰 熊玉华 赵鸿斌</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c434t-d7456fa3f1295bad2f0ea5f576fc1a9aca59aeceef879f211efea759c2f2f363</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2013</creationdate><topic>Annealing</topic><topic>Density</topic><topic>Electrical properties</topic><topic>Gd-doped HfO2</topic><topic>Hafnium oxide</topic><topic>high-k</topic><topic>interface</topic><topic>Leakage current</topic><topic>MOS电容器</topic><topic>NH3</topic><topic>NH3 annealing</topic><topic>Rare earth metals</topic><topic>rare earths</topic><topic>Silicon</topic><topic>Stacks</topic><topic>堆栈</topic><topic>快速热退火</topic><topic>接口特性</topic><topic>掺钆</topic><topic>漏电流密度</topic><topic>电气性能</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>杨萌萌 屠海令 杜军 魏峰 熊玉华 赵鸿斌</creatorcontrib><collection>中文科技期刊数据库</collection><collection>中文科技期刊数据库-CALIS站点</collection><collection>中文科技期刊数据库-7.0平台</collection><collection>中文科技期刊数据库-工程技术</collection><collection>中文科技期刊数据库- 镜像站点</collection><collection>CrossRef</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>METADEX</collection><collection>Technology Research Database</collection><collection>Materials Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Journal of rare earths</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>杨萌萌 屠海令 杜军 魏峰 熊玉华 赵鸿斌</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Effects of NH3 annealing on interface and electrical properties of Gd-doped HfO2/Si stack</atitle><jtitle>Journal of rare earths</jtitle><addtitle>Journal of Rare Earths</addtitle><date>2013-04-01</date><risdate>2013</risdate><volume>31</volume><issue>4</issue><spage>395</spage><epage>399</epage><pages>395-399</pages><issn>1002-0721</issn><eissn>2509-4963</eissn><abstract>Effects of NH3 rapid thermal annealing （RTA） on the interface and electrical properties of Gd-doped HfO2 （GDH）/Si stack were investigated. The process of NH3 annealing could significantly affect the crystallization, stoichiometric properties of GDH film and the interface characteristic of GDH/Si system. NH3 annealing also led to the decrease of interface layer thickness. The leakage current density of Pt/GDH/p-Si MOS capacitor without RTA was 2× 10-3 A/cm2. After NH3 annealing, the leakage current density was about one order of magnitude lower （3.9× 104 A/cm2）. The effective permittivity extracted from the C-V curves was -14.1 and 13.1 for samples without and with RTA, respectively.</abstract><pub>Elsevier B.V</pub><doi>10.1016/s1002-0721(12)60293-2</doi><tpages>5</tpages></addata></record> |
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| ispartof | Journal of rare earths, 2013-04, Vol.31 (4), p.395-399 |
| issn | 1002-0721 2509-4963 |
| language | eng |
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| source | Elsevier ScienceDirect Journals Complete; Alma/SFX Local Collection |
| subjects | Annealing Density Electrical properties Gd-doped HfO2 Hafnium oxide high-k interface Leakage current MOS电容器 NH3 NH3 annealing Rare earth metals rare earths Silicon Stacks 堆栈 快速热退火 接口特性 掺钆 漏电流密度 电气性能 |
| title | Effects of NH3 annealing on interface and electrical properties of Gd-doped HfO2/Si stack |
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