Photoemission investigation of the Schottky barrier at the Sc/3C-SiC (111) interface

The Schottky barrier and interfacial chemistry for interfaces formed by evaporation of Sc onto 3C‐SiC (111)‐(1x1) surfaces at 600 °C has been investigated using in situ X‐ray and ultra‐violet photoelectron spectroscopy (XPS and UPS) and low energy electron diffraction (LEED). Sc was observed to grow...

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Veröffentlicht in:	Physica Status Solidi. B: Basic Solid State Physics 2015-02, Vol.252 (2), p.391-396
Hauptverfasser:	King, Sean W., Nemanich, Robert J., Davis, Robert F.
Format:	Artikel
Sprache:	eng
Schlagworte:	Barriers Bend tests Deposition Evaporation Scandium Schottky barrier silicon carbide Solid state physics UPS X-ray photoelectron spectroscopy X-rays XPS
Online-Zugang:	Volltext
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