Photoemission investigation of the Schottky barrier at the Sc/3C-SiC (111) interface
The Schottky barrier and interfacial chemistry for interfaces formed by evaporation of Sc onto 3C‐SiC (111)‐(1x1) surfaces at 600 °C has been investigated using in situ X‐ray and ultra‐violet photoelectron spectroscopy (XPS and UPS) and low energy electron diffraction (LEED). Sc was observed to grow...
Gespeichert in:
| Veröffentlicht in: | Physica Status Solidi. B: Basic Solid State Physics 2015-02, Vol.252 (2), p.391-396 |
|---|---|
| Hauptverfasser: | , , |
| Format: | Artikel |
| Sprache: | eng |
| Schlagworte: | |
| Online-Zugang: | Volltext |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| container_end_page | 396 |
|---|---|
| container_issue | 2 |
| container_start_page | 391 |
| container_title | Physica Status Solidi. B: Basic Solid State Physics |
| container_volume | 252 |
| creator | King, Sean W. Nemanich, Robert J. Davis, Robert F. |
| description | The Schottky barrier and interfacial chemistry for interfaces formed by evaporation of Sc onto 3C‐SiC (111)‐(1x1) surfaces at 600 °C has been investigated using in situ X‐ray and ultra‐violet photoelectron spectroscopy (XPS and UPS) and low energy electron diffraction (LEED). Sc was observed to grow in a two‐dimensional manner and exhibit a (1x1) LEED pattern up to thicknesses of ∼2 nm beyond which diffraction patterns were no longer observable. XPS measurements of these same films showed a clear reaction of Sc with the 3C‐SiC (111)‐(1x1) surface to form a ScSix and ScCx interfacial layer in addition to the formation of a metallic Sc film. XPS measurements also showed the deposition of Sc induced ∼0.5 eV of upward band bending resulting in a Schottky barrier of 0.65 ± 0.15 eV. |
| doi_str_mv | 10.1002/pssb.201451340 |
| format | Article |
| fullrecord | <record><control><sourceid>proquest_wiley</sourceid><recordid>TN_cdi_proquest_miscellaneous_1669856311</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>1669856311</sourcerecordid><originalsourceid>FETCH-LOGICAL-c3490-8e0bb53de3a420c3f564668ad4d6c5c0514efa54bdb8b318a14c050a57661be53</originalsourceid><addsrcrecordid>eNo9kM1PwkAQxTdGExG9eu4RD4WZ7kfbozSKH6CYYjxutu1WVgrF7qLy31sC4TR5L-83mXmEXCP0ESAYrK3N-gEg40gZnJAO8gB9GnM8JR2gIfgYh8E5ubD2CwBCpNghs-m8drVeGmtNvfLM6kdbZz6V26m69Nxce2neZtxi62WqaYxuPOUO_oAmfmoSr4eINy3sdFOqXF-Ss1JVVl8dZpe839_Nkgd__Dp6TG7Hfk5ZDH6kIcs4LTRVLICcllwwISJVsELkPAeOTJeKs6zIooxipJC1JigeCoGZ5rRLevu966b-3rSHy_aPXFeVWul6YyUKEUdcUMQ2Gu-jv6bSW7luzFI1W4kgd93JXXfy2J2cpunwqFrW37PGOv13ZFWzkCKkIZcfLyM5ieHtefIUyCH9B_H-cxs</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>1669856311</pqid></control><display><type>article</type><title>Photoemission investigation of the Schottky barrier at the Sc/3C-SiC (111) interface</title><source>Access via Wiley Online Library</source><creator>King, Sean W. ; Nemanich, Robert J. ; Davis, Robert F.</creator><creatorcontrib>King, Sean W. ; Nemanich, Robert J. ; Davis, Robert F.</creatorcontrib><description>The Schottky barrier and interfacial chemistry for interfaces formed by evaporation of Sc onto 3C‐SiC (111)‐(1x1) surfaces at 600 °C has been investigated using in situ X‐ray and ultra‐violet photoelectron spectroscopy (XPS and UPS) and low energy electron diffraction (LEED). Sc was observed to grow in a two‐dimensional manner and exhibit a (1x1) LEED pattern up to thicknesses of ∼2 nm beyond which diffraction patterns were no longer observable. XPS measurements of these same films showed a clear reaction of Sc with the 3C‐SiC (111)‐(1x1) surface to form a ScSix and ScCx interfacial layer in addition to the formation of a metallic Sc film. XPS measurements also showed the deposition of Sc induced ∼0.5 eV of upward band bending resulting in a Schottky barrier of 0.65 ± 0.15 eV.</description><identifier>ISSN: 0370-1972</identifier><identifier>EISSN: 1521-3951</identifier><identifier>DOI: 10.1002/pssb.201451340</identifier><language>eng</language><publisher>Blackwell Publishing Ltd</publisher><subject>Barriers ; Bend tests ; Deposition ; Evaporation ; Scandium ; Schottky barrier ; silicon carbide ; Solid state physics ; UPS ; X-ray photoelectron spectroscopy ; X-rays ; XPS</subject><ispartof>Physica Status Solidi. B: Basic Solid State Physics, 2015-02, Vol.252 (2), p.391-396</ispartof><rights>2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c3490-8e0bb53de3a420c3f564668ad4d6c5c0514efa54bdb8b318a14c050a57661be53</citedby></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://onlinelibrary.wiley.com/doi/pdf/10.1002%2Fpssb.201451340$$EPDF$$P50$$Gwiley$$H</linktopdf><linktohtml>$$Uhttps://onlinelibrary.wiley.com/doi/full/10.1002%2Fpssb.201451340$$EHTML$$P50$$Gwiley$$H</linktohtml><link.rule.ids>315,782,786,1419,27931,27932,45581,45582</link.rule.ids></links><search><creatorcontrib>King, Sean W.</creatorcontrib><creatorcontrib>Nemanich, Robert J.</creatorcontrib><creatorcontrib>Davis, Robert F.</creatorcontrib><title>Photoemission investigation of the Schottky barrier at the Sc/3C-SiC (111) interface</title><title>Physica Status Solidi. B: Basic Solid State Physics</title><addtitle>Phys. Status Solidi B</addtitle><description>The Schottky barrier and interfacial chemistry for interfaces formed by evaporation of Sc onto 3C‐SiC (111)‐(1x1) surfaces at 600 °C has been investigated using in situ X‐ray and ultra‐violet photoelectron spectroscopy (XPS and UPS) and low energy electron diffraction (LEED). Sc was observed to grow in a two‐dimensional manner and exhibit a (1x1) LEED pattern up to thicknesses of ∼2 nm beyond which diffraction patterns were no longer observable. XPS measurements of these same films showed a clear reaction of Sc with the 3C‐SiC (111)‐(1x1) surface to form a ScSix and ScCx interfacial layer in addition to the formation of a metallic Sc film. XPS measurements also showed the deposition of Sc induced ∼0.5 eV of upward band bending resulting in a Schottky barrier of 0.65 ± 0.15 eV.</description><subject>Barriers</subject><subject>Bend tests</subject><subject>Deposition</subject><subject>Evaporation</subject><subject>Scandium</subject><subject>Schottky barrier</subject><subject>silicon carbide</subject><subject>Solid state physics</subject><subject>UPS</subject><subject>X-ray photoelectron spectroscopy</subject><subject>X-rays</subject><subject>XPS</subject><issn>0370-1972</issn><issn>1521-3951</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2015</creationdate><recordtype>article</recordtype><recordid>eNo9kM1PwkAQxTdGExG9eu4RD4WZ7kfbozSKH6CYYjxutu1WVgrF7qLy31sC4TR5L-83mXmEXCP0ESAYrK3N-gEg40gZnJAO8gB9GnM8JR2gIfgYh8E5ubD2CwBCpNghs-m8drVeGmtNvfLM6kdbZz6V26m69Nxce2neZtxi62WqaYxuPOUO_oAmfmoSr4eINy3sdFOqXF-Ss1JVVl8dZpe839_Nkgd__Dp6TG7Hfk5ZDH6kIcs4LTRVLICcllwwISJVsELkPAeOTJeKs6zIooxipJC1JigeCoGZ5rRLevu966b-3rSHy_aPXFeVWul6YyUKEUdcUMQ2Gu-jv6bSW7luzFI1W4kgd93JXXfy2J2cpunwqFrW37PGOv13ZFWzkCKkIZcfLyM5ieHtefIUyCH9B_H-cxs</recordid><startdate>201502</startdate><enddate>201502</enddate><creator>King, Sean W.</creator><creator>Nemanich, Robert J.</creator><creator>Davis, Robert F.</creator><general>Blackwell Publishing Ltd</general><scope>BSCLL</scope><scope>7U5</scope><scope>8FD</scope><scope>L7M</scope></search><sort><creationdate>201502</creationdate><title>Photoemission investigation of the Schottky barrier at the Sc/3C-SiC (111) interface</title><author>King, Sean W. ; Nemanich, Robert J. ; Davis, Robert F.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c3490-8e0bb53de3a420c3f564668ad4d6c5c0514efa54bdb8b318a14c050a57661be53</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2015</creationdate><topic>Barriers</topic><topic>Bend tests</topic><topic>Deposition</topic><topic>Evaporation</topic><topic>Scandium</topic><topic>Schottky barrier</topic><topic>silicon carbide</topic><topic>Solid state physics</topic><topic>UPS</topic><topic>X-ray photoelectron spectroscopy</topic><topic>X-rays</topic><topic>XPS</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>King, Sean W.</creatorcontrib><creatorcontrib>Nemanich, Robert J.</creatorcontrib><creatorcontrib>Davis, Robert F.</creatorcontrib><collection>Istex</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Physica Status Solidi. B: Basic Solid State Physics</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>King, Sean W.</au><au>Nemanich, Robert J.</au><au>Davis, Robert F.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Photoemission investigation of the Schottky barrier at the Sc/3C-SiC (111) interface</atitle><jtitle>Physica Status Solidi. B: Basic Solid State Physics</jtitle><addtitle>Phys. Status Solidi B</addtitle><date>2015-02</date><risdate>2015</risdate><volume>252</volume><issue>2</issue><spage>391</spage><epage>396</epage><pages>391-396</pages><issn>0370-1972</issn><eissn>1521-3951</eissn><abstract>The Schottky barrier and interfacial chemistry for interfaces formed by evaporation of Sc onto 3C‐SiC (111)‐(1x1) surfaces at 600 °C has been investigated using in situ X‐ray and ultra‐violet photoelectron spectroscopy (XPS and UPS) and low energy electron diffraction (LEED). Sc was observed to grow in a two‐dimensional manner and exhibit a (1x1) LEED pattern up to thicknesses of ∼2 nm beyond which diffraction patterns were no longer observable. XPS measurements of these same films showed a clear reaction of Sc with the 3C‐SiC (111)‐(1x1) surface to form a ScSix and ScCx interfacial layer in addition to the formation of a metallic Sc film. XPS measurements also showed the deposition of Sc induced ∼0.5 eV of upward band bending resulting in a Schottky barrier of 0.65 ± 0.15 eV.</abstract><pub>Blackwell Publishing Ltd</pub><doi>10.1002/pssb.201451340</doi><tpages>6</tpages></addata></record> |
| fulltext | fulltext |
| identifier | ISSN: 0370-1972 |
| ispartof | Physica Status Solidi. B: Basic Solid State Physics, 2015-02, Vol.252 (2), p.391-396 |
| issn | 0370-1972 1521-3951 |
| language | eng |
| recordid | cdi_proquest_miscellaneous_1669856311 |
| source | Access via Wiley Online Library |
| subjects | Barriers Bend tests Deposition Evaporation Scandium Schottky barrier silicon carbide Solid state physics UPS X-ray photoelectron spectroscopy X-rays XPS |
| title | Photoemission investigation of the Schottky barrier at the Sc/3C-SiC (111) interface |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2024-12-04T16%3A55%3A40IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_wiley&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Photoemission%20investigation%20of%20the%20Schottky%20barrier%20at%20the%20Sc/3C-SiC%20(111)%20interface&rft.jtitle=Physica%20Status%20Solidi.%20B:%20Basic%20Solid%20State%20Physics&rft.au=King,%20Sean%20W.&rft.date=2015-02&rft.volume=252&rft.issue=2&rft.spage=391&rft.epage=396&rft.pages=391-396&rft.issn=0370-1972&rft.eissn=1521-3951&rft_id=info:doi/10.1002/pssb.201451340&rft_dat=%3Cproquest_wiley%3E1669856311%3C/proquest_wiley%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_pqid=1669856311&rft_id=info:pmid/&rfr_iscdi=true |