Narrow-linewidth short-pulse III-V-on-silicon mode-locked lasers based on a linear and ring cavity geometry

Narrow-linewidth short-pulse III-V-on-silicon mode-locked lasers based on a linear and ring cavity geometry

Picosecond-pulse III-V-on-silicon mode-locked lasers based on linear and ring extended cavity geometries are presented. In passive mode-locked operation a 12 kHz -3dB linewidth of the fundamental RF tone at 4.7 GHz is obtained for the linear cavity geometry and 16 kHz for the ring cavity geometry. S...

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Veröffentlicht in:Optics express 2015-02, Vol.23 (3), p.3221-3229
Hauptverfasser: Keyvaninia, S, Uvin, S, Tassaert, M, Fu, X, Latkowski, S, Mariën, J, Thomassen, L, Lelarge, F, Duan, G, Verheyen, P, Lepage, G, Van Campenhout, J, Bente, E, Roelkens, G
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container_issue 3
container_start_page 3221
container_title Optics express
container_volume 23
creator Keyvaninia, S
Uvin, S
Tassaert, M
Fu, X
Latkowski, S
Mariën, J
Thomassen, L
Lelarge, F
Duan, G
Verheyen, P
Lepage, G
Van Campenhout, J
Bente, E
Roelkens, G
description Picosecond-pulse III-V-on-silicon mode-locked lasers based on linear and ring extended cavity geometries are presented. In passive mode-locked operation a 12 kHz -3dB linewidth of the fundamental RF tone at 4.7 GHz is obtained for the linear cavity geometry and 16 kHz for the ring cavity geometry. Stabilization of the repetition rate of these devices using hybrid mode-locking is also demonstrated.
doi_str_mv 10.1364/OE.23.003221
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title Narrow-linewidth short-pulse III-V-on-silicon mode-locked lasers based on a linear and ring cavity geometry
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