Active resonance wavelength stabilization for silicon microring resonators with an in-resonator defect-state-absorption-based photodetector

We propose and demonstrate active resonance wavelength stabilization for silicon microring resonators with an in-resonator defect-state-absorption (DSA)-based photodetector (PD) for optical interconnects. We integrate an electro-optic (EO) tuner and a thermo-optic (TO) tuner on the microring, which are both feedback-controlled following a photocurrent threshold-detection method. Our BF(2)-ion-implanted DSA-based PIN PD exhibits a cavity-enhanced sub-bandgap responsivity at 1550 nm of 3.3 mA/W upon -2 V, which is 550-fold higher than that exhibited by an unimplanted PIN diode integrated on the same microring. Our experiment reveals active stabilization of the resonance wavelength within a tolerance of 0.07 nm upon a step increment of the stage temperature by 7 °C. Upon temperature modulations between 23 °C and 32 °C and between 18 °C and 23 °C, the actively stabilized resonance exhibits a transmission power fluctuation within 2 dB. We observe open eye diagrams at a data transmission rate of up to 30 Gb/s under the temperature modulations.