SnO2 thin films grown by atomic layer deposition using a novel Sn precursor

•We developed a new ALD process for SnO2 films using dimethylamino-2-methyl-2-propoxy-tin(II) as a novel Sn precursor.•The SnO2 films grown from Sn(dmamp)2 has negligible impurity contents.•Sn ions in the films had a single binding state corresponding to Sn4+ in SnO2. SnO2 thin films were grown by a...

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Veröffentlicht in:	Applied surface science 2014-11, Vol.320, p.188-194
Hauptverfasser:	Choi, Min-Jung, Cho, Cheol Jin, Kim, Kwang-Chon, Pyeon, Jung Joon, Park, Hyung-Ho, Kim, Hyo-Suk, Han, Jeong Hwan, Kim, Chang Gyoun, Chung, Taek-Mo, Park, Tae Joo, Kwon, Beomjin, Jeong, Doo Seok, Baek, Seung-Hyub, Kang, Chong-Yun, Kim, Jin-Sang, Kim, Seong Keun
Format:	Artikel
Sprache:	eng
Schlagworte:	Atomic layer deposition Carbon Condensed matter: electronic structure, electrical, magnetic, and optical properties Condensed matter: structure, mechanical and thermal properties Cross-disciplinary physics: materials science rheology Density Deposition Exact sciences and technology Physics Precursors Self-limiting growth Sn(dmamp)2 SnO2 Thin films Tin Tin dioxide Tin oxides
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