P.123: Electroluminescence Properties of WOLED with a New Yellow Fluorescent Material

A new yellow fluorescent material, (2Z)‐3‐[4,4“‐bis(dimethylamino)‐1,1‘:4’,1”‐terphenyl‐2‘‐yl]‐2‐phenylacrylonitrile (BDAT‐P), have been synthesized for use in organic light‐emitting diodes. Optoelectronic properties of device with the structure of ITO (180 nm) / NPB (50 nm) / MADN: PFVtPh(SYB‐41) 8...

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Veröffentlicht in:SID International Symposium Digest of technical papers 2013-06, Vol.44 (1), p.1445-1448
Hauptverfasser: Lee, Sungnam, Kim, Htungtak, Shin, Dongmyung
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description A new yellow fluorescent material, (2Z)‐3‐[4,4“‐bis(dimethylamino)‐1,1‘:4’,1”‐terphenyl‐2‘‐yl]‐2‐phenylacrylonitrile (BDAT‐P), have been synthesized for use in organic light‐emitting diodes. Optoelectronic properties of device with the structure of ITO (180 nm) / NPB (50 nm) / MADN: PFVtPh(SYB‐41) 8 % (17 nm) / CBP (5 nm) / CBP:Ir(pq)2acac 8 % (3 nm) / CBP (5 nm) / MADN:BDAT‐P 8 % (3 nm) / CBP (5 nm) / MADN:SYB‐41 8 % (17 nm) / TPBi (40 nm) / Liq (2 nm) / Al (100 nm) was measured and revealed that BDAT‐P was sufficiently applicable as a dopant of one of emitting layers in white light‐emitting diodes. Maximum luminance of device was measured to be 26950 cd/m2. Maximum luminous and quantum efficiency were observed to be 14.22 cd/A and 6.58 %, respectively. The device emitted warm white light corresponding to Commission Internationale de I'Eclairage (CIExy) coordinates of (0.372, 0.424) at 11 V, (0.375, 0.417) at 12 V, (0.372, 0.409) at 13 V, (0.366, 0.401) at 14 V, and (0.360, 0.393) at 15 V, respectively.
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Optoelectronic properties of device with the structure of ITO (180 nm) / NPB (50 nm) / MADN: PFVtPh(SYB‐41) 8 % (17 nm) / CBP (5 nm) / CBP:Ir(pq)2acac 8 % (3 nm) / CBP (5 nm) / MADN:BDAT‐P 8 % (3 nm) / CBP (5 nm) / MADN:SYB‐41 8 % (17 nm) / TPBi (40 nm) / Liq (2 nm) / Al (100 nm) was measured and revealed that BDAT‐P was sufficiently applicable as a dopant of one of emitting layers in white light‐emitting diodes. Maximum luminance of device was measured to be 26950 cd/m2. Maximum luminous and quantum efficiency were observed to be 14.22 cd/A and 6.58 %, respectively. The device emitted warm white light corresponding to Commission Internationale de I'Eclairage (CIExy) coordinates of (0.372, 0.424) at 11 V, (0.375, 0.417) at 12 V, (0.372, 0.409) at 13 V, (0.366, 0.401) at 14 V, and (0.360, 0.393) at 15 V, respectively.</description><identifier>ISSN: 0097-966X</identifier><identifier>EISSN: 2168-0159</identifier><identifier>DOI: 10.1002/j.2168-0159.2013.tb06517.x</identifier><language>eng</language><publisher>Oxford, UK: Blackwell Publishing Ltd</publisher><subject>Aluminum ; BDAT-P ; Devices ; Dopants ; Electroluminescence ; Emittance ; Light emitting diodes ; Luminance ; Optoelectronic devices ; White light ; white organic light-emitting diodes ; yellow fluorescent dopant</subject><ispartof>SID International Symposium Digest of technical papers, 2013-06, Vol.44 (1), p.1445-1448</ispartof><rights>2013 Society for Information Display</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><cites>FETCH-LOGICAL-c2077-761d79c897cf4c0f03584b3800cfe3df9c4b2506311f0780d7157b214aa0b4f73</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://onlinelibrary.wiley.com/doi/pdf/10.1002%2Fj.2168-0159.2013.tb06517.x$$EPDF$$P50$$Gwiley$$H</linktopdf><linktohtml>$$Uhttps://onlinelibrary.wiley.com/doi/full/10.1002%2Fj.2168-0159.2013.tb06517.x$$EHTML$$P50$$Gwiley$$H</linktohtml><link.rule.ids>314,780,784,1417,27924,27925,45574,45575</link.rule.ids></links><search><creatorcontrib>Lee, Sungnam</creatorcontrib><creatorcontrib>Kim, Htungtak</creatorcontrib><creatorcontrib>Shin, Dongmyung</creatorcontrib><title>P.123: Electroluminescence Properties of WOLED with a New Yellow Fluorescent Material</title><title>SID International Symposium Digest of technical papers</title><description>A new yellow fluorescent material, (2Z)‐3‐[4,4“‐bis(dimethylamino)‐1,1‘:4’,1”‐terphenyl‐2‘‐yl]‐2‐phenylacrylonitrile (BDAT‐P), have been synthesized for use in organic light‐emitting diodes. Optoelectronic properties of device with the structure of ITO (180 nm) / NPB (50 nm) / MADN: PFVtPh(SYB‐41) 8 % (17 nm) / CBP (5 nm) / CBP:Ir(pq)2acac 8 % (3 nm) / CBP (5 nm) / MADN:BDAT‐P 8 % (3 nm) / CBP (5 nm) / MADN:SYB‐41 8 % (17 nm) / TPBi (40 nm) / Liq (2 nm) / Al (100 nm) was measured and revealed that BDAT‐P was sufficiently applicable as a dopant of one of emitting layers in white light‐emitting diodes. Maximum luminance of device was measured to be 26950 cd/m2. Maximum luminous and quantum efficiency were observed to be 14.22 cd/A and 6.58 %, respectively. The device emitted warm white light corresponding to Commission Internationale de I'Eclairage (CIExy) coordinates of (0.372, 0.424) at 11 V, (0.375, 0.417) at 12 V, (0.372, 0.409) at 13 V, (0.366, 0.401) at 14 V, and (0.360, 0.393) at 15 V, respectively.</description><subject>Aluminum</subject><subject>BDAT-P</subject><subject>Devices</subject><subject>Dopants</subject><subject>Electroluminescence</subject><subject>Emittance</subject><subject>Light emitting diodes</subject><subject>Luminance</subject><subject>Optoelectronic devices</subject><subject>White light</subject><subject>white organic light-emitting diodes</subject><subject>yellow fluorescent dopant</subject><issn>0097-966X</issn><issn>2168-0159</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2013</creationdate><recordtype>article</recordtype><recordid>eNqVkMGO0zAQhi0EEmXhHSy4cEmYiR072ROo2y5IpVtBVwsny3FtkeLWXTtRu29PQld74MZpRprv_zX6CHmLkCNA8WGbFyiqDLCs8wKQ5V0DokSZn56RydPpOZkA1DKrhfjxkrxKaQvAGOf1hNyucizYJZ15a7oYfL9r9zYZuzeWrmI42Ni1NtHg6N3NYnZFj233i2q6tEf603ofjnTu-xD_Rjr6VXc2ttq_Ji-c9sm-eZwX5HY-W08_Z4ub6y_TT4vMFCBlJgVuZG2qWhrHDThgZcUbVgEYZ9nG1YY3RQmCITqQFWwklrIpkGsNDXeSXZD3595DDPe9TZ3atcMn3uu9DX1SKARAVaGsB_TdP-g29HE_fDdQrOIlAo7U5ZkyMaQUrVOH2O50fFAIajSutmrUqkatajSuHo2r0xD-eA4fW28f_iOpvl-tV-M6VGTnijZ19vRUoeNvJSSTpbpbXqvlupwjnxbqG_sDoZuVlA</recordid><startdate>201306</startdate><enddate>201306</enddate><creator>Lee, Sungnam</creator><creator>Kim, Htungtak</creator><creator>Shin, Dongmyung</creator><general>Blackwell Publishing Ltd</general><general>Wiley Subscription Services, Inc</general><scope>BSCLL</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7SC</scope><scope>7SP</scope><scope>8FD</scope><scope>JQ2</scope><scope>L7M</scope><scope>L~C</scope><scope>L~D</scope></search><sort><creationdate>201306</creationdate><title>P.123: Electroluminescence Properties of WOLED with a New Yellow Fluorescent Material</title><author>Lee, Sungnam ; Kim, Htungtak ; Shin, Dongmyung</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c2077-761d79c897cf4c0f03584b3800cfe3df9c4b2506311f0780d7157b214aa0b4f73</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2013</creationdate><topic>Aluminum</topic><topic>BDAT-P</topic><topic>Devices</topic><topic>Dopants</topic><topic>Electroluminescence</topic><topic>Emittance</topic><topic>Light emitting diodes</topic><topic>Luminance</topic><topic>Optoelectronic devices</topic><topic>White light</topic><topic>white organic light-emitting diodes</topic><topic>yellow fluorescent dopant</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Lee, Sungnam</creatorcontrib><creatorcontrib>Kim, Htungtak</creatorcontrib><creatorcontrib>Shin, Dongmyung</creatorcontrib><collection>Istex</collection><collection>CrossRef</collection><collection>Computer and Information Systems Abstracts</collection><collection>Electronics &amp; Communications Abstracts</collection><collection>Technology Research Database</collection><collection>ProQuest Computer Science Collection</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>Computer and Information Systems Abstracts – Academic</collection><collection>Computer and Information Systems Abstracts Professional</collection><jtitle>SID International Symposium Digest of technical papers</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Lee, Sungnam</au><au>Kim, Htungtak</au><au>Shin, Dongmyung</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>P.123: Electroluminescence Properties of WOLED with a New Yellow Fluorescent Material</atitle><jtitle>SID International Symposium Digest of technical papers</jtitle><date>2013-06</date><risdate>2013</risdate><volume>44</volume><issue>1</issue><spage>1445</spage><epage>1448</epage><pages>1445-1448</pages><issn>0097-966X</issn><eissn>2168-0159</eissn><abstract>A new yellow fluorescent material, (2Z)‐3‐[4,4“‐bis(dimethylamino)‐1,1‘:4’,1”‐terphenyl‐2‘‐yl]‐2‐phenylacrylonitrile (BDAT‐P), have been synthesized for use in organic light‐emitting diodes. 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subjects Aluminum
BDAT-P
Devices
Dopants
Electroluminescence
Emittance
Light emitting diodes
Luminance
Optoelectronic devices
White light
white organic light-emitting diodes
yellow fluorescent dopant
title P.123: Electroluminescence Properties of WOLED with a New Yellow Fluorescent Material
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