Polymer–Fullerene Bulk Heterojunction-Based Strain-Sensitive Flexible Organic Field-Effect Transistor

In this work, we have fabricated organic field-effect transistor using the blend of poly(3-hexylthiophene) and [6,6]-phenyl C61-butyric acid methylester as active layer. Transistor was fabricated in MESFET-type configuration with top gate and bottom drain/source contacts on flexible PET substrate. D...

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Veröffentlicht in:	Arabian Journal for Science and Engineering 2015-01, Vol.40 (1), p.257-262
Hauptverfasser:	Yasin, Muhammad, Tauqeer, T., Rahman, Hamood Ur, Karimov, Kh. S., San, Sait E., Tunc, Ali V.
Format:	Artikel
Sprache:	eng
Schlagworte:	Aluminum Devices Drains Electrodes Engineering Field effect transistors Gates Humanities and Social Sciences multidisciplinary Research Article - Physics Science Semiconductor devices Silver Strain
Online-Zugang:	Volltext
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