Effect of Stress in GaN/AlInGaN Grown on GaN Templates with Different Stress States
We clarify the effect of the stress in GaN templates on the subsequent AlInGaN deposition by simply growing 150nm AlInGaN on a 30 mu m GaN template (sample 1) prepared by hydride vapor phase epitaxy and a 2.3 mu m thin control GaN template (sample 2) prepared by metalorganic chemical vapor depositio...
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| Veröffentlicht in: | Chinese physics letters 2014-05, Vol.31 (5), p.56801-1-056801-4 |
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| container_end_page | 1-056801-4 |
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| container_issue | 5 |
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| container_title | Chinese physics letters |
| container_volume | 31 |
| creator | Feng, Xiang-Xu Liu, Nai-Xin Zhang, Ning Wei, Tong-Bo Wang, Jun-Xi Li, Jin-Min |
| description | We clarify the effect of the stress in GaN templates on the subsequent AlInGaN deposition by simply growing 150nm AlInGaN on a 30 mu m GaN template (sample 1) prepared by hydride vapor phase epitaxy and a 2.3 mu m thin control GaN template (sample 2) prepared by metalorganic chemical vapor deposition. X-ray diffraction and secondary iron mass spectroscopy measurements reveal the stress states (tensile stress and full relaxed for samples 1 and 2, respectively) and compositions (Al sub(0.169)In sub(0.01) Ga sub(0.821)N, Al sub(0.171)In sub(0.006)Ga sub(0.823)N for samples 1 and 2, respectively) of AlInGaN. By carefully elimina ting other possible factor, as template surface roughness, it is concluded that different stress states of AlInGaN should stem from different stress states of GaN templates. |
| doi_str_mv | 10.1088/0256-307X/31/5/056801 |
| format | Article |
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X-ray diffraction and secondary iron mass spectroscopy measurements reveal the stress states (tensile stress and full relaxed for samples 1 and 2, respectively) and compositions (Al sub(0.169)In sub(0.01) Ga sub(0.821)N, Al sub(0.171)In sub(0.006)Ga sub(0.823)N for samples 1 and 2, respectively) of AlInGaN. By carefully elimina ting other possible factor, as template surface roughness, it is concluded that different stress states of AlInGaN should stem from different stress states of GaN templates.</description><identifier>ISSN: 0256-307X</identifier><identifier>EISSN: 1741-3540</identifier><identifier>DOI: 10.1088/0256-307X/31/5/056801</identifier><language>eng</language><subject>Deposition ; Diffraction ; Gallium nitrides ; Mass spectroscopy ; Stresses ; Surface roughness ; Tensile stress ; Vapor phase epitaxy</subject><ispartof>Chinese physics letters, 2014-05, Vol.31 (5), p.56801-1-056801-4</ispartof><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c286t-104ff8b7cbe0761e2342bfbdc9a6edc3c791a700a9795310f9881e1cc5b9f60b3</citedby><cites>FETCH-LOGICAL-c286t-104ff8b7cbe0761e2342bfbdc9a6edc3c791a700a9795310f9881e1cc5b9f60b3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,780,784,27924,27925</link.rule.ids></links><search><creatorcontrib>Feng, Xiang-Xu</creatorcontrib><creatorcontrib>Liu, Nai-Xin</creatorcontrib><creatorcontrib>Zhang, Ning</creatorcontrib><creatorcontrib>Wei, Tong-Bo</creatorcontrib><creatorcontrib>Wang, Jun-Xi</creatorcontrib><creatorcontrib>Li, Jin-Min</creatorcontrib><title>Effect of Stress in GaN/AlInGaN Grown on GaN Templates with Different Stress States</title><title>Chinese physics letters</title><description>We clarify the effect of the stress in GaN templates on the subsequent AlInGaN deposition by simply growing 150nm AlInGaN on a 30 mu m GaN template (sample 1) prepared by hydride vapor phase epitaxy and a 2.3 mu m thin control GaN template (sample 2) prepared by metalorganic chemical vapor deposition. X-ray diffraction and secondary iron mass spectroscopy measurements reveal the stress states (tensile stress and full relaxed for samples 1 and 2, respectively) and compositions (Al sub(0.169)In sub(0.01) Ga sub(0.821)N, Al sub(0.171)In sub(0.006)Ga sub(0.823)N for samples 1 and 2, respectively) of AlInGaN. By carefully elimina ting other possible factor, as template surface roughness, it is concluded that different stress states of AlInGaN should stem from different stress states of GaN templates.</description><subject>Deposition</subject><subject>Diffraction</subject><subject>Gallium nitrides</subject><subject>Mass spectroscopy</subject><subject>Stresses</subject><subject>Surface roughness</subject><subject>Tensile stress</subject><subject>Vapor phase epitaxy</subject><issn>0256-307X</issn><issn>1741-3540</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2014</creationdate><recordtype>article</recordtype><recordid>eNo9kE1LAzEURYMoWKs_QcjSzTjvTSYfsyy11kLRRSu4C5k0wZHpTE1Siv_ejlVXF-479y0OIbcI9whK5VBwkTGQbznDnOfAhQI8IyOUJWaMl3BORv_MJbmK8QMAUSGOyGrmvbOJ9p6uUnAx0qajc_OcT9pFd0w6D_2ho_1PSdduu2tNcpEemvROH5rjOLgu_W1XaThekwtv2uhufnNMXh9n6-lTtnyZL6aTZWYLJVKGUHqvamlrB1KgK1hZ1L7e2MoIt7HMygqNBDCVrDhD8JVS6NBaXldeQM3G5O70dxf6z72LSW-baF3bms71-6hRCADFBRdHlJ9QG_oYg_N6F5qtCV8aQQ8S9SBID4I0Q831SSL7BrHsZCc</recordid><startdate>201405</startdate><enddate>201405</enddate><creator>Feng, Xiang-Xu</creator><creator>Liu, Nai-Xin</creator><creator>Zhang, Ning</creator><creator>Wei, Tong-Bo</creator><creator>Wang, Jun-Xi</creator><creator>Li, Jin-Min</creator><scope>AAYXX</scope><scope>CITATION</scope><scope>7QQ</scope><scope>7SR</scope><scope>7U5</scope><scope>8FD</scope><scope>H8D</scope><scope>JG9</scope><scope>L7M</scope></search><sort><creationdate>201405</creationdate><title>Effect of Stress in GaN/AlInGaN Grown on GaN Templates with Different Stress States</title><author>Feng, Xiang-Xu ; Liu, Nai-Xin ; Zhang, Ning ; Wei, Tong-Bo ; Wang, Jun-Xi ; Li, Jin-Min</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c286t-104ff8b7cbe0761e2342bfbdc9a6edc3c791a700a9795310f9881e1cc5b9f60b3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2014</creationdate><topic>Deposition</topic><topic>Diffraction</topic><topic>Gallium nitrides</topic><topic>Mass spectroscopy</topic><topic>Stresses</topic><topic>Surface roughness</topic><topic>Tensile stress</topic><topic>Vapor phase epitaxy</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Feng, Xiang-Xu</creatorcontrib><creatorcontrib>Liu, Nai-Xin</creatorcontrib><creatorcontrib>Zhang, Ning</creatorcontrib><creatorcontrib>Wei, Tong-Bo</creatorcontrib><creatorcontrib>Wang, Jun-Xi</creatorcontrib><creatorcontrib>Li, Jin-Min</creatorcontrib><collection>CrossRef</collection><collection>Ceramic Abstracts</collection><collection>Engineered Materials Abstracts</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>Technology Research Database</collection><collection>Aerospace Database</collection><collection>Materials Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Chinese physics letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Feng, Xiang-Xu</au><au>Liu, Nai-Xin</au><au>Zhang, Ning</au><au>Wei, Tong-Bo</au><au>Wang, Jun-Xi</au><au>Li, Jin-Min</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Effect of Stress in GaN/AlInGaN Grown on GaN Templates with Different Stress States</atitle><jtitle>Chinese physics letters</jtitle><date>2014-05</date><risdate>2014</risdate><volume>31</volume><issue>5</issue><spage>56801</spage><epage>1-056801-4</epage><pages>56801-1-056801-4</pages><issn>0256-307X</issn><eissn>1741-3540</eissn><abstract>We clarify the effect of the stress in GaN templates on the subsequent AlInGaN deposition by simply growing 150nm AlInGaN on a 30 mu m GaN template (sample 1) prepared by hydride vapor phase epitaxy and a 2.3 mu m thin control GaN template (sample 2) prepared by metalorganic chemical vapor deposition. X-ray diffraction and secondary iron mass spectroscopy measurements reveal the stress states (tensile stress and full relaxed for samples 1 and 2, respectively) and compositions (Al sub(0.169)In sub(0.01) Ga sub(0.821)N, Al sub(0.171)In sub(0.006)Ga sub(0.823)N for samples 1 and 2, respectively) of AlInGaN. By carefully elimina ting other possible factor, as template surface roughness, it is concluded that different stress states of AlInGaN should stem from different stress states of GaN templates.</abstract><doi>10.1088/0256-307X/31/5/056801</doi></addata></record> |
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| ispartof | Chinese physics letters, 2014-05, Vol.31 (5), p.56801-1-056801-4 |
| issn | 0256-307X 1741-3540 |
| language | eng |
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| source | Institute of Physics Journals |
| subjects | Deposition Diffraction Gallium nitrides Mass spectroscopy Stresses Surface roughness Tensile stress Vapor phase epitaxy |
| title | Effect of Stress in GaN/AlInGaN Grown on GaN Templates with Different Stress States |
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