Polaron activation energy of nano porphyrin nickel(II) thin films
5,10,15,20-Tetraphenyl-21 H , 23 H -porphyrin nickel(II), NiTPP films were prepared by thermal evaporation method of mother powder material. Electrical as well as thermo-electric properties were investigated for the as-deposited and annealed NiTPP films. The effect of NiTPP film thickness (160–460 n...
Gespeichert in:
| Veröffentlicht in: | Applied physics. A, Materials science & processing Materials science & processing, 2015-01, Vol.118 (1), p.345-351 |
|---|---|
| Hauptverfasser: | , , , |
| Format: | Artikel |
| Sprache: | eng |
| Schlagworte: | |
| Online-Zugang: | Volltext |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| container_end_page | 351 |
|---|---|
| container_issue | 1 |
| container_start_page | 345 |
| container_title | Applied physics. A, Materials science & processing |
| container_volume | 118 |
| creator | Dongol, M. El-Denglawey, A. Elhady, A. F. Abuelwafa, A. A. |
| description | 5,10,15,20-Tetraphenyl-21
H
, 23
H
-porphyrin nickel(II), NiTPP films were prepared by thermal evaporation method of mother powder material. Electrical as well as thermo-electric properties were investigated for the as-deposited and annealed NiTPP films. The effect of NiTPP film thickness (160–460 nm) and isochronal annealing in temperature range (300–348 K) on DC electrical properties were studied. Both bulk resistivity and the mean free path were determined; their values are 1.38 × 10
5
Ω cm and 0.433 nm, respectively. The electrical conductivity exhibits intrinsic and extrinsic conduction. The values of activation energy in extrinsic and intrinsic regions are 0.204 and 1.12 eV, respectively. Mott’s parameters were determined at low temperature. Seebeck coefficient indicates
p
-type conduction of NiTPP films. Carrier density, mobility and holes concentration were determined. Seebeck coefficient decreases with the increasing of temperature, while the conductivity increases with the increasing of temperature. The difference between the conductivity and the thermoelectric power activation energies was attributed to the potential barrier grain boundaries. |
| doi_str_mv | 10.1007/s00339-014-8737-0 |
| format | Article |
| fullrecord | <record><control><sourceid>proquest_cross</sourceid><recordid>TN_cdi_proquest_miscellaneous_1660083324</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>1660083324</sourcerecordid><originalsourceid>FETCH-LOGICAL-c387t-3875c3ba98b4a4457b87ec3ae84aa8c5e04781293b51f51c6302949a992429593</originalsourceid><addsrcrecordid>eNp9kE1LAzEQhoMoWKs_wNse6yE6-dhNcizFj0JBD3oO2ZBtU7fJmmyF_nsj69k5zAe87zDzIHRL4J4AiIcMwJjCQDiWggkMZ2hGOKMYGgbnaAaKCyyZai7RVc57KMEpnaHlW-xNiqEydvTfZvSldcGl7amKXRVMiNUQ07A7JR-q4O2n6xfr9V017src-f6Qr9FFZ_rsbv7qHH08Pb6vXvDm9Xm9Wm6wZVKMuKTastYo2XLDeS1aKZxlxklujLS1Ay4koYq1NelqYsvZVHFllKKcqlqxOVpMe4cUv44uj_rgs3V9b4KLx6xJ0wBIxigvUjJJbYo5J9fpIfmDSSdNQP_i0hMuXXDpX1waiodOnly0YeuS3sdjCuWjf0w_oixrbQ</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>1660083324</pqid></control><display><type>article</type><title>Polaron activation energy of nano porphyrin nickel(II) thin films</title><source>SpringerLink Journals - AutoHoldings</source><creator>Dongol, M. ; El-Denglawey, A. ; Elhady, A. F. ; Abuelwafa, A. A.</creator><creatorcontrib>Dongol, M. ; El-Denglawey, A. ; Elhady, A. F. ; Abuelwafa, A. A.</creatorcontrib><description>5,10,15,20-Tetraphenyl-21
H
, 23
H
-porphyrin nickel(II), NiTPP films were prepared by thermal evaporation method of mother powder material. Electrical as well as thermo-electric properties were investigated for the as-deposited and annealed NiTPP films. The effect of NiTPP film thickness (160–460 nm) and isochronal annealing in temperature range (300–348 K) on DC electrical properties were studied. Both bulk resistivity and the mean free path were determined; their values are 1.38 × 10
5
Ω cm and 0.433 nm, respectively. The electrical conductivity exhibits intrinsic and extrinsic conduction. The values of activation energy in extrinsic and intrinsic regions are 0.204 and 1.12 eV, respectively. Mott’s parameters were determined at low temperature. Seebeck coefficient indicates
p
-type conduction of NiTPP films. Carrier density, mobility and holes concentration were determined. Seebeck coefficient decreases with the increasing of temperature, while the conductivity increases with the increasing of temperature. The difference between the conductivity and the thermoelectric power activation energies was attributed to the potential barrier grain boundaries.</description><identifier>ISSN: 0947-8396</identifier><identifier>EISSN: 1432-0630</identifier><identifier>DOI: 10.1007/s00339-014-8737-0</identifier><language>eng</language><publisher>Berlin/Heidelberg: Springer Berlin Heidelberg</publisher><subject>Activation energy ; Annealing ; Carrier density ; Characterization and Evaluation of Materials ; Condensed Matter Physics ; Electric power generation ; Grain boundaries ; Machines ; Manufacturing ; Materials science ; Nanostructure ; Nanotechnology ; Optical and Electronic Materials ; Physics ; Physics and Astronomy ; Processes ; Surfaces and Interfaces ; Thermoelectricity ; Thin Films</subject><ispartof>Applied physics. A, Materials science & processing, 2015-01, Vol.118 (1), p.345-351</ispartof><rights>Springer-Verlag Berlin Heidelberg 2014</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c387t-3875c3ba98b4a4457b87ec3ae84aa8c5e04781293b51f51c6302949a992429593</citedby><cites>FETCH-LOGICAL-c387t-3875c3ba98b4a4457b87ec3ae84aa8c5e04781293b51f51c6302949a992429593</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://link.springer.com/content/pdf/10.1007/s00339-014-8737-0$$EPDF$$P50$$Gspringer$$H</linktopdf><linktohtml>$$Uhttps://link.springer.com/10.1007/s00339-014-8737-0$$EHTML$$P50$$Gspringer$$H</linktohtml><link.rule.ids>314,780,784,27923,27924,41487,42556,51318</link.rule.ids></links><search><creatorcontrib>Dongol, M.</creatorcontrib><creatorcontrib>El-Denglawey, A.</creatorcontrib><creatorcontrib>Elhady, A. F.</creatorcontrib><creatorcontrib>Abuelwafa, A. A.</creatorcontrib><title>Polaron activation energy of nano porphyrin nickel(II) thin films</title><title>Applied physics. A, Materials science & processing</title><addtitle>Appl. Phys. A</addtitle><description>5,10,15,20-Tetraphenyl-21
H
, 23
H
-porphyrin nickel(II), NiTPP films were prepared by thermal evaporation method of mother powder material. Electrical as well as thermo-electric properties were investigated for the as-deposited and annealed NiTPP films. The effect of NiTPP film thickness (160–460 nm) and isochronal annealing in temperature range (300–348 K) on DC electrical properties were studied. Both bulk resistivity and the mean free path were determined; their values are 1.38 × 10
5
Ω cm and 0.433 nm, respectively. The electrical conductivity exhibits intrinsic and extrinsic conduction. The values of activation energy in extrinsic and intrinsic regions are 0.204 and 1.12 eV, respectively. Mott’s parameters were determined at low temperature. Seebeck coefficient indicates
p
-type conduction of NiTPP films. Carrier density, mobility and holes concentration were determined. Seebeck coefficient decreases with the increasing of temperature, while the conductivity increases with the increasing of temperature. The difference between the conductivity and the thermoelectric power activation energies was attributed to the potential barrier grain boundaries.</description><subject>Activation energy</subject><subject>Annealing</subject><subject>Carrier density</subject><subject>Characterization and Evaluation of Materials</subject><subject>Condensed Matter Physics</subject><subject>Electric power generation</subject><subject>Grain boundaries</subject><subject>Machines</subject><subject>Manufacturing</subject><subject>Materials science</subject><subject>Nanostructure</subject><subject>Nanotechnology</subject><subject>Optical and Electronic Materials</subject><subject>Physics</subject><subject>Physics and Astronomy</subject><subject>Processes</subject><subject>Surfaces and Interfaces</subject><subject>Thermoelectricity</subject><subject>Thin Films</subject><issn>0947-8396</issn><issn>1432-0630</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2015</creationdate><recordtype>article</recordtype><recordid>eNp9kE1LAzEQhoMoWKs_wNse6yE6-dhNcizFj0JBD3oO2ZBtU7fJmmyF_nsj69k5zAe87zDzIHRL4J4AiIcMwJjCQDiWggkMZ2hGOKMYGgbnaAaKCyyZai7RVc57KMEpnaHlW-xNiqEydvTfZvSldcGl7amKXRVMiNUQ07A7JR-q4O2n6xfr9V017src-f6Qr9FFZ_rsbv7qHH08Pb6vXvDm9Xm9Wm6wZVKMuKTastYo2XLDeS1aKZxlxklujLS1Ay4koYq1NelqYsvZVHFllKKcqlqxOVpMe4cUv44uj_rgs3V9b4KLx6xJ0wBIxigvUjJJbYo5J9fpIfmDSSdNQP_i0hMuXXDpX1waiodOnly0YeuS3sdjCuWjf0w_oixrbQ</recordid><startdate>20150101</startdate><enddate>20150101</enddate><creator>Dongol, M.</creator><creator>El-Denglawey, A.</creator><creator>Elhady, A. F.</creator><creator>Abuelwafa, A. A.</creator><general>Springer Berlin Heidelberg</general><scope>AAYXX</scope><scope>CITATION</scope><scope>7U5</scope><scope>8BQ</scope><scope>8FD</scope><scope>H8D</scope><scope>JG9</scope><scope>L7M</scope></search><sort><creationdate>20150101</creationdate><title>Polaron activation energy of nano porphyrin nickel(II) thin films</title><author>Dongol, M. ; El-Denglawey, A. ; Elhady, A. F. ; Abuelwafa, A. A.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c387t-3875c3ba98b4a4457b87ec3ae84aa8c5e04781293b51f51c6302949a992429593</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2015</creationdate><topic>Activation energy</topic><topic>Annealing</topic><topic>Carrier density</topic><topic>Characterization and Evaluation of Materials</topic><topic>Condensed Matter Physics</topic><topic>Electric power generation</topic><topic>Grain boundaries</topic><topic>Machines</topic><topic>Manufacturing</topic><topic>Materials science</topic><topic>Nanostructure</topic><topic>Nanotechnology</topic><topic>Optical and Electronic Materials</topic><topic>Physics</topic><topic>Physics and Astronomy</topic><topic>Processes</topic><topic>Surfaces and Interfaces</topic><topic>Thermoelectricity</topic><topic>Thin Films</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Dongol, M.</creatorcontrib><creatorcontrib>El-Denglawey, A.</creatorcontrib><creatorcontrib>Elhady, A. F.</creatorcontrib><creatorcontrib>Abuelwafa, A. A.</creatorcontrib><collection>CrossRef</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>METADEX</collection><collection>Technology Research Database</collection><collection>Aerospace Database</collection><collection>Materials Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Applied physics. A, Materials science & processing</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Dongol, M.</au><au>El-Denglawey, A.</au><au>Elhady, A. F.</au><au>Abuelwafa, A. A.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Polaron activation energy of nano porphyrin nickel(II) thin films</atitle><jtitle>Applied physics. A, Materials science & processing</jtitle><stitle>Appl. Phys. A</stitle><date>2015-01-01</date><risdate>2015</risdate><volume>118</volume><issue>1</issue><spage>345</spage><epage>351</epage><pages>345-351</pages><issn>0947-8396</issn><eissn>1432-0630</eissn><abstract>5,10,15,20-Tetraphenyl-21
H
, 23
H
-porphyrin nickel(II), NiTPP films were prepared by thermal evaporation method of mother powder material. Electrical as well as thermo-electric properties were investigated for the as-deposited and annealed NiTPP films. The effect of NiTPP film thickness (160–460 nm) and isochronal annealing in temperature range (300–348 K) on DC electrical properties were studied. Both bulk resistivity and the mean free path were determined; their values are 1.38 × 10
5
Ω cm and 0.433 nm, respectively. The electrical conductivity exhibits intrinsic and extrinsic conduction. The values of activation energy in extrinsic and intrinsic regions are 0.204 and 1.12 eV, respectively. Mott’s parameters were determined at low temperature. Seebeck coefficient indicates
p
-type conduction of NiTPP films. Carrier density, mobility and holes concentration were determined. Seebeck coefficient decreases with the increasing of temperature, while the conductivity increases with the increasing of temperature. The difference between the conductivity and the thermoelectric power activation energies was attributed to the potential barrier grain boundaries.</abstract><cop>Berlin/Heidelberg</cop><pub>Springer Berlin Heidelberg</pub><doi>10.1007/s00339-014-8737-0</doi><tpages>7</tpages></addata></record> |
| fulltext | fulltext |
| identifier | ISSN: 0947-8396 |
| ispartof | Applied physics. A, Materials science & processing, 2015-01, Vol.118 (1), p.345-351 |
| issn | 0947-8396 1432-0630 |
| language | eng |
| recordid | cdi_proquest_miscellaneous_1660083324 |
| source | SpringerLink Journals - AutoHoldings |
| subjects | Activation energy Annealing Carrier density Characterization and Evaluation of Materials Condensed Matter Physics Electric power generation Grain boundaries Machines Manufacturing Materials science Nanostructure Nanotechnology Optical and Electronic Materials Physics Physics and Astronomy Processes Surfaces and Interfaces Thermoelectricity Thin Films |
| title | Polaron activation energy of nano porphyrin nickel(II) thin films |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-10T12%3A57%3A48IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_cross&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Polaron%20activation%20energy%20of%20nano%20porphyrin%20nickel(II)%20thin%20films&rft.jtitle=Applied%20physics.%20A,%20Materials%20science%20&%20processing&rft.au=Dongol,%20M.&rft.date=2015-01-01&rft.volume=118&rft.issue=1&rft.spage=345&rft.epage=351&rft.pages=345-351&rft.issn=0947-8396&rft.eissn=1432-0630&rft_id=info:doi/10.1007/s00339-014-8737-0&rft_dat=%3Cproquest_cross%3E1660083324%3C/proquest_cross%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_pqid=1660083324&rft_id=info:pmid/&rfr_iscdi=true |