Performance enhancement of triisopropylsilylethynyl pentacene organic field effect transistors with inkjet-printed silver source/drain electrodes achieved via dispersible reduced graphene oxide
We report a performance enhancement of triisopropylsilylethynyl (TIPS) pentacene organic field effect transistors (OFETs) obtained by treating the surface of SiO2/Si substrate with dispersible reduced graphene oxide (rGO). The source and drain electrodes were patterned with inkjet-printed highly con...
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| Veröffentlicht in: | Thin solid films 2013-09, Vol.542, p.327-331 |
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| creator | Jang, Jingon Yoon, Yeoheung Jeong, Hyunhak Lee, Hyungwoo Song, Younggul Cho, Kyungjune Hong, Seunghun Lee, Hyoyoung Lee, Takhee |
| description | We report a performance enhancement of triisopropylsilylethynyl (TIPS) pentacene organic field effect transistors (OFETs) obtained by treating the surface of SiO2/Si substrate with dispersible reduced graphene oxide (rGO). The source and drain electrodes were patterned with inkjet-printed highly conductive silver. The sheet resistance of inkjet-patterned silver electrodes has found to be ~1 Ω/□, which is comparable to that of typical vacuum-evaporated silver electrodes. The electrical performance has improved by rGO treatment, with a morphology improved for the active TIPS pentacene layer. The rGO treatment increased the morphological grain size of TIPS pentacene, resulting in a decreased number of interfacial trapping sites in the carrier transport paths. The field effect mobility of the TIPS pentacene OFETs, following the rGO surface treatment, was improved from 0.082cm2/V∙s to 0.141cm2/V∙s.
•We made triisopropylsilylethynyl pentacene transistor on reduced graphene oxide (rGO).•The electrical performance of the device was improved with the rGO layer.•The source and drain electrodes were patterned by inkjet-printed silver.•The conductivity of inkjet-printed silver was comparable to that of evaporated silver. |
| doi_str_mv | 10.1016/j.tsf.2013.07.008 |
| format | Article |
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•We made triisopropylsilylethynyl pentacene transistor on reduced graphene oxide (rGO).•The electrical performance of the device was improved with the rGO layer.•The source and drain electrodes were patterned by inkjet-printed silver.•The conductivity of inkjet-printed silver was comparable to that of evaporated silver.</description><identifier>ISSN: 0040-6090</identifier><identifier>EISSN: 1879-2731</identifier><identifier>DOI: 10.1016/j.tsf.2013.07.008</identifier><identifier>CODEN: THSFAP</identifier><language>eng</language><publisher>Amsterdam: Elsevier B.V</publisher><subject>Applied sciences ; Condensed matter: structure, mechanical and thermal properties ; Drains ; Electrodes ; Electronics ; Exact sciences and technology ; Graphene ; Inkjet printing ; Organic field effect transistor ; Oxides ; Pentacene ; Performance enhancement ; Physics ; Reduced graphene oxide ; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices ; Silver ; Structure and morphology; thickness ; Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties) ; Thin film structure and morphology ; Tips ; Transistors ; triisopropylsilylethynyl (TIPS) pentacene</subject><ispartof>Thin solid films, 2013-09, Vol.542, p.327-331</ispartof><rights>2013 Elsevier B.V.</rights><rights>2014 INIST-CNRS</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c360t-46079d50f53e8a557e19895ea1454b7473ea53f2c0c65a6cc3c16fb79b600f53</citedby><cites>FETCH-LOGICAL-c360t-46079d50f53e8a557e19895ea1454b7473ea53f2c0c65a6cc3c16fb79b600f53</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://dx.doi.org/10.1016/j.tsf.2013.07.008$$EHTML$$P50$$Gelsevier$$H</linktohtml><link.rule.ids>314,780,784,3548,27923,27924,45994</link.rule.ids><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=27659533$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>Jang, Jingon</creatorcontrib><creatorcontrib>Yoon, Yeoheung</creatorcontrib><creatorcontrib>Jeong, Hyunhak</creatorcontrib><creatorcontrib>Lee, Hyungwoo</creatorcontrib><creatorcontrib>Song, Younggul</creatorcontrib><creatorcontrib>Cho, Kyungjune</creatorcontrib><creatorcontrib>Hong, Seunghun</creatorcontrib><creatorcontrib>Lee, Hyoyoung</creatorcontrib><creatorcontrib>Lee, Takhee</creatorcontrib><title>Performance enhancement of triisopropylsilylethynyl pentacene organic field effect transistors with inkjet-printed silver source/drain electrodes achieved via dispersible reduced graphene oxide</title><title>Thin solid films</title><description>We report a performance enhancement of triisopropylsilylethynyl (TIPS) pentacene organic field effect transistors (OFETs) obtained by treating the surface of SiO2/Si substrate with dispersible reduced graphene oxide (rGO). The source and drain electrodes were patterned with inkjet-printed highly conductive silver. The sheet resistance of inkjet-patterned silver electrodes has found to be ~1 Ω/□, which is comparable to that of typical vacuum-evaporated silver electrodes. The electrical performance has improved by rGO treatment, with a morphology improved for the active TIPS pentacene layer. The rGO treatment increased the morphological grain size of TIPS pentacene, resulting in a decreased number of interfacial trapping sites in the carrier transport paths. The field effect mobility of the TIPS pentacene OFETs, following the rGO surface treatment, was improved from 0.082cm2/V∙s to 0.141cm2/V∙s.
•We made triisopropylsilylethynyl pentacene transistor on reduced graphene oxide (rGO).•The electrical performance of the device was improved with the rGO layer.•The source and drain electrodes were patterned by inkjet-printed silver.•The conductivity of inkjet-printed silver was comparable to that of evaporated silver.</description><subject>Applied sciences</subject><subject>Condensed matter: structure, mechanical and thermal properties</subject><subject>Drains</subject><subject>Electrodes</subject><subject>Electronics</subject><subject>Exact sciences and technology</subject><subject>Graphene</subject><subject>Inkjet printing</subject><subject>Organic field effect transistor</subject><subject>Oxides</subject><subject>Pentacene</subject><subject>Performance enhancement</subject><subject>Physics</subject><subject>Reduced graphene oxide</subject><subject>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</subject><subject>Silver</subject><subject>Structure and morphology; thickness</subject><subject>Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties)</subject><subject>Thin film structure and morphology</subject><subject>Tips</subject><subject>Transistors</subject><subject>triisopropylsilylethynyl (TIPS) pentacene</subject><issn>0040-6090</issn><issn>1879-2731</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2013</creationdate><recordtype>article</recordtype><recordid>eNp9kc2OEzEQhEcIJMLCA3DzBYnLZNvz54w4oRV_0kpw2LvleNqbDo49uJ2w83i8GQ5Z7ZFTS62vqtVVVfVWwlqCHK7368xu3YBs16DWAJtn1Upu1Fg3qpXPqxVAB_UAI7ysXjHvAUA2Tbuq_vzA5GI6mGBRYNid5wFDFtGJnIg4zinOi2fyi8e8W8LixVwAYzGgiOneBLLCEfpJoHNoc9GZwMQ5Jha_Ke8EhZ97zPWcKGScRPE6YRIcj8ni9ZQMBYG-KFOckIWxO8JT4U5kxEQ8Y2LaehQJp6Mt-_tk5t2_6w804evqhTOe8c3jvKruPn-6u_la337_8u3m421t2wFy3Q2gxqkH17e4MX2vUI6bsUcju77bqk61aPrWNRbs0JvB2tbKwW3VuB3gLLqq3l9sSx6_jshZH4gtem8CxiNrORROqbGDgsoLalNkTuh0-fxg0qIl6HNbeq9LW_rclgalS1tF8-7R3rA13pUILfGTsFFDP_ZtW7gPFw7LqyfCpNkSltImSiVBPUX6z5W_MrCxMQ</recordid><startdate>20130902</startdate><enddate>20130902</enddate><creator>Jang, Jingon</creator><creator>Yoon, Yeoheung</creator><creator>Jeong, Hyunhak</creator><creator>Lee, Hyungwoo</creator><creator>Song, Younggul</creator><creator>Cho, Kyungjune</creator><creator>Hong, Seunghun</creator><creator>Lee, Hyoyoung</creator><creator>Lee, Takhee</creator><general>Elsevier B.V</general><general>Elsevier</general><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>7SR</scope><scope>7U5</scope><scope>8BQ</scope><scope>8FD</scope><scope>JG9</scope><scope>L7M</scope></search><sort><creationdate>20130902</creationdate><title>Performance enhancement of triisopropylsilylethynyl pentacene organic field effect transistors with inkjet-printed silver source/drain electrodes achieved via dispersible reduced graphene oxide</title><author>Jang, Jingon ; Yoon, Yeoheung ; Jeong, Hyunhak ; Lee, Hyungwoo ; Song, Younggul ; Cho, Kyungjune ; Hong, Seunghun ; Lee, Hyoyoung ; Lee, Takhee</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c360t-46079d50f53e8a557e19895ea1454b7473ea53f2c0c65a6cc3c16fb79b600f53</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2013</creationdate><topic>Applied sciences</topic><topic>Condensed matter: structure, mechanical and thermal properties</topic><topic>Drains</topic><topic>Electrodes</topic><topic>Electronics</topic><topic>Exact sciences and technology</topic><topic>Graphene</topic><topic>Inkjet printing</topic><topic>Organic field effect transistor</topic><topic>Oxides</topic><topic>Pentacene</topic><topic>Performance enhancement</topic><topic>Physics</topic><topic>Reduced graphene oxide</topic><topic>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</topic><topic>Silver</topic><topic>Structure and morphology; thickness</topic><topic>Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties)</topic><topic>Thin film structure and morphology</topic><topic>Tips</topic><topic>Transistors</topic><topic>triisopropylsilylethynyl (TIPS) pentacene</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Jang, Jingon</creatorcontrib><creatorcontrib>Yoon, Yeoheung</creatorcontrib><creatorcontrib>Jeong, Hyunhak</creatorcontrib><creatorcontrib>Lee, Hyungwoo</creatorcontrib><creatorcontrib>Song, Younggul</creatorcontrib><creatorcontrib>Cho, Kyungjune</creatorcontrib><creatorcontrib>Hong, Seunghun</creatorcontrib><creatorcontrib>Lee, Hyoyoung</creatorcontrib><creatorcontrib>Lee, Takhee</creatorcontrib><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Engineered Materials Abstracts</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>METADEX</collection><collection>Technology Research Database</collection><collection>Materials Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Thin solid films</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Jang, Jingon</au><au>Yoon, Yeoheung</au><au>Jeong, Hyunhak</au><au>Lee, Hyungwoo</au><au>Song, Younggul</au><au>Cho, Kyungjune</au><au>Hong, Seunghun</au><au>Lee, Hyoyoung</au><au>Lee, Takhee</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Performance enhancement of triisopropylsilylethynyl pentacene organic field effect transistors with inkjet-printed silver source/drain electrodes achieved via dispersible reduced graphene oxide</atitle><jtitle>Thin solid films</jtitle><date>2013-09-02</date><risdate>2013</risdate><volume>542</volume><spage>327</spage><epage>331</epage><pages>327-331</pages><issn>0040-6090</issn><eissn>1879-2731</eissn><coden>THSFAP</coden><abstract>We report a performance enhancement of triisopropylsilylethynyl (TIPS) pentacene organic field effect transistors (OFETs) obtained by treating the surface of SiO2/Si substrate with dispersible reduced graphene oxide (rGO). The source and drain electrodes were patterned with inkjet-printed highly conductive silver. The sheet resistance of inkjet-patterned silver electrodes has found to be ~1 Ω/□, which is comparable to that of typical vacuum-evaporated silver electrodes. The electrical performance has improved by rGO treatment, with a morphology improved for the active TIPS pentacene layer. The rGO treatment increased the morphological grain size of TIPS pentacene, resulting in a decreased number of interfacial trapping sites in the carrier transport paths. The field effect mobility of the TIPS pentacene OFETs, following the rGO surface treatment, was improved from 0.082cm2/V∙s to 0.141cm2/V∙s.
•We made triisopropylsilylethynyl pentacene transistor on reduced graphene oxide (rGO).•The electrical performance of the device was improved with the rGO layer.•The source and drain electrodes were patterned by inkjet-printed silver.•The conductivity of inkjet-printed silver was comparable to that of evaporated silver.</abstract><cop>Amsterdam</cop><pub>Elsevier B.V</pub><doi>10.1016/j.tsf.2013.07.008</doi><tpages>5</tpages></addata></record> |
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| subjects | Applied sciences Condensed matter: structure, mechanical and thermal properties Drains Electrodes Electronics Exact sciences and technology Graphene Inkjet printing Organic field effect transistor Oxides Pentacene Performance enhancement Physics Reduced graphene oxide Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Silver Structure and morphology thickness Surfaces and interfaces thin films and whiskers (structure and nonelectronic properties) Thin film structure and morphology Tips Transistors triisopropylsilylethynyl (TIPS) pentacene |
| title | Performance enhancement of triisopropylsilylethynyl pentacene organic field effect transistors with inkjet-printed silver source/drain electrodes achieved via dispersible reduced graphene oxide |
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