Gamma-ray irradiation effects on electrical properties of ferroelectric PbTiO3 and Pb(Zr0.52Ti0.48)O3 thin films
We investigated gamma-ray irradiation effects on electrical properties of ferroelectric PbTiO3 (PTO) and Pb(Zr0.52Ti0.48)O3 (PZT) thin films. PTO and PZT thin films were prepared on the Pt/Ti/SiO2/Si substrates by using a sol–gel method with a spin-coating process. The prepared PTO and PZT thin film...
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| Veröffentlicht in: | Thin solid films 2014-07, Vol.562, p.185-189 |
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| creator | Yang, Sun A Kim, Byung Hoon Lee, Min Ku Lee, Gyoung Ja Lee, Nam-Ho Bu, Sang Don |
| description | We investigated gamma-ray irradiation effects on electrical properties of ferroelectric PbTiO3 (PTO) and Pb(Zr0.52Ti0.48)O3 (PZT) thin films. PTO and PZT thin films were prepared on the Pt/Ti/SiO2/Si substrates by using a sol–gel method with a spin-coating process. The prepared PTO and PZT thin films were subjected to gamma radiation with various total doses from 0kGy to 300kGy. There were no noticeable morphological and structural changes in PTO and PZT films before and after irradiation. As a total dose increases up to 300kGy, a larger degradation behavior of electrical properties was observed in the PZT films rather than in the PTO films. About 35% of remanent polarization value decreased for the PZT films, while just 10% of that decreased for the PTO films. Dielectric constant of PZT films decreased much from 850 to 580, but that of the PTO films decreased just a little from 400 to 340. This degradation behavior of polarization and dielectric properties can be explained by the pinning of domain walls by some radiation-induced defects. These results suggest that the PTO films have higher radiation hardness properties than the PZT films.
•Gamma-ray irradiation effects on electrical properties of PbTiO3 and Pb(Zr0.52Ti0.48)O3 films•Radiation-induced defects and degradation of electrical properties•Radiation hardness of PbTiO3 and Pb(Zr0.52Ti0.48)O3 films |
| doi_str_mv | 10.1016/j.tsf.2014.04.038 |
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•Gamma-ray irradiation effects on electrical properties of PbTiO3 and Pb(Zr0.52Ti0.48)O3 films•Radiation-induced defects and degradation of electrical properties•Radiation hardness of PbTiO3 and Pb(Zr0.52Ti0.48)O3 films</description><identifier>ISSN: 0040-6090</identifier><identifier>EISSN: 1879-2731</identifier><identifier>DOI: 10.1016/j.tsf.2014.04.038</identifier><identifier>CODEN: THSFAP</identifier><language>eng</language><publisher>Amsterdam: Elsevier B.V</publisher><subject>Condensed matter: electronic structure, electrical, magnetic, and optical properties ; Condensed matter: structure, mechanical and thermal properties ; Cross-disciplinary physics: materials science; rheology ; Degradation ; Dielectric constant ; Dielectric thin films ; Dielectrics, piezoelectrics, and ferroelectrics and their properties ; Electrical properties ; Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures ; Electronic transport phenomena in thin films and low-dimensional structures ; Exact sciences and technology ; Ferroelectric materials ; Ferroelectricity ; Gamma-ray ; Irradiation ; Lead zirconate titanates ; Liquid phase epitaxy; deposition from liquid phases (melts, solutions, and surface layers on liquids) ; Materials science ; Methods of deposition of films and coatings; film growth and epitaxy ; Pb(Zr,Ti)O3 ; PbTiO3 ; Physical radiation effects, radiation damage ; Physics ; Polarization ; Structure of solids and liquids; crystallography ; Thin films</subject><ispartof>Thin solid films, 2014-07, Vol.562, p.185-189</ispartof><rights>2014 Elsevier B.V.</rights><rights>2015 INIST-CNRS</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c275t-c65ed498a8dfb5e24e77a64e3d9612190001bfcfe2fae2135e9c81dd65a96f943</citedby><cites>FETCH-LOGICAL-c275t-c65ed498a8dfb5e24e77a64e3d9612190001bfcfe2fae2135e9c81dd65a96f943</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://dx.doi.org/10.1016/j.tsf.2014.04.038$$EHTML$$P50$$Gelsevier$$H</linktohtml><link.rule.ids>314,780,784,3550,27924,27925,45995</link.rule.ids><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=28538614$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>Yang, Sun A</creatorcontrib><creatorcontrib>Kim, Byung Hoon</creatorcontrib><creatorcontrib>Lee, Min Ku</creatorcontrib><creatorcontrib>Lee, Gyoung Ja</creatorcontrib><creatorcontrib>Lee, Nam-Ho</creatorcontrib><creatorcontrib>Bu, Sang Don</creatorcontrib><title>Gamma-ray irradiation effects on electrical properties of ferroelectric PbTiO3 and Pb(Zr0.52Ti0.48)O3 thin films</title><title>Thin solid films</title><description>We investigated gamma-ray irradiation effects on electrical properties of ferroelectric PbTiO3 (PTO) and Pb(Zr0.52Ti0.48)O3 (PZT) thin films. PTO and PZT thin films were prepared on the Pt/Ti/SiO2/Si substrates by using a sol–gel method with a spin-coating process. The prepared PTO and PZT thin films were subjected to gamma radiation with various total doses from 0kGy to 300kGy. There were no noticeable morphological and structural changes in PTO and PZT films before and after irradiation. As a total dose increases up to 300kGy, a larger degradation behavior of electrical properties was observed in the PZT films rather than in the PTO films. About 35% of remanent polarization value decreased for the PZT films, while just 10% of that decreased for the PTO films. Dielectric constant of PZT films decreased much from 850 to 580, but that of the PTO films decreased just a little from 400 to 340. This degradation behavior of polarization and dielectric properties can be explained by the pinning of domain walls by some radiation-induced defects. These results suggest that the PTO films have higher radiation hardness properties than the PZT films.
•Gamma-ray irradiation effects on electrical properties of PbTiO3 and Pb(Zr0.52Ti0.48)O3 films•Radiation-induced defects and degradation of electrical properties•Radiation hardness of PbTiO3 and Pb(Zr0.52Ti0.48)O3 films</description><subject>Condensed matter: electronic structure, electrical, magnetic, and optical properties</subject><subject>Condensed matter: structure, mechanical and thermal properties</subject><subject>Cross-disciplinary physics: materials science; rheology</subject><subject>Degradation</subject><subject>Dielectric constant</subject><subject>Dielectric thin films</subject><subject>Dielectrics, piezoelectrics, and ferroelectrics and their properties</subject><subject>Electrical properties</subject><subject>Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures</subject><subject>Electronic transport phenomena in thin films and low-dimensional structures</subject><subject>Exact sciences and technology</subject><subject>Ferroelectric materials</subject><subject>Ferroelectricity</subject><subject>Gamma-ray</subject><subject>Irradiation</subject><subject>Lead zirconate titanates</subject><subject>Liquid phase epitaxy; deposition from liquid phases (melts, solutions, and surface layers on liquids)</subject><subject>Materials science</subject><subject>Methods of deposition of films and coatings; film growth and epitaxy</subject><subject>Pb(Zr,Ti)O3</subject><subject>PbTiO3</subject><subject>Physical radiation effects, radiation damage</subject><subject>Physics</subject><subject>Polarization</subject><subject>Structure of solids and liquids; crystallography</subject><subject>Thin films</subject><issn>0040-6090</issn><issn>1879-2731</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2014</creationdate><recordtype>article</recordtype><recordid>eNp9kMlKBDEQhoMoOC4P4K0vgh66rSydTuNJxA0EPYwXLyGTVDBDL2PSCr69aUY9CgX5Sf21fYScUKgoUHmxrqbkKwZUVJCDqx2yoKppS9ZwuksWAAJKCS3sk4OU1gBAGeMLsrkzfW_KaL6KEKNxwUxhHAr0Hu2Uill2WcVgTVds4rjBOAXMCV94jHH8zRbPq2V44oUZXJZnrxGqmi0DVEKd5-_pLQyFD12fjsieN13C45_3kLzc3iyv78vHp7uH66vH0rKmnkora3SiVUY5v6qRCWwaIwVy10rKaDsfsPLWI_MGGeU1tlZR52RtWulbwQ_J2bZvXvr9A9Ok-5Asdp0ZcPxImkoJ0AgqVLbSrdXGMaWIXm9i6E380hT0TFevdaarZ7oacvC55vSnvUkZjY9msCH9FTJVcyXpvMbl1of51s-AUScbcLDoQszktBvDP1O-ARU5jrY</recordid><startdate>20140701</startdate><enddate>20140701</enddate><creator>Yang, Sun A</creator><creator>Kim, Byung Hoon</creator><creator>Lee, Min Ku</creator><creator>Lee, Gyoung Ja</creator><creator>Lee, Nam-Ho</creator><creator>Bu, Sang Don</creator><general>Elsevier B.V</general><general>Elsevier</general><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7SR</scope><scope>7U5</scope><scope>8BQ</scope><scope>8FD</scope><scope>JG9</scope><scope>L7M</scope></search><sort><creationdate>20140701</creationdate><title>Gamma-ray irradiation effects on electrical properties of ferroelectric PbTiO3 and Pb(Zr0.52Ti0.48)O3 thin films</title><author>Yang, Sun A ; Kim, Byung Hoon ; Lee, Min Ku ; Lee, Gyoung Ja ; Lee, Nam-Ho ; Bu, Sang Don</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c275t-c65ed498a8dfb5e24e77a64e3d9612190001bfcfe2fae2135e9c81dd65a96f943</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2014</creationdate><topic>Condensed matter: electronic structure, electrical, magnetic, and optical properties</topic><topic>Condensed matter: structure, mechanical and thermal properties</topic><topic>Cross-disciplinary physics: materials science; rheology</topic><topic>Degradation</topic><topic>Dielectric constant</topic><topic>Dielectric thin films</topic><topic>Dielectrics, piezoelectrics, and ferroelectrics and their properties</topic><topic>Electrical properties</topic><topic>Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures</topic><topic>Electronic transport phenomena in thin films and low-dimensional structures</topic><topic>Exact sciences and technology</topic><topic>Ferroelectric materials</topic><topic>Ferroelectricity</topic><topic>Gamma-ray</topic><topic>Irradiation</topic><topic>Lead zirconate titanates</topic><topic>Liquid phase epitaxy; deposition from liquid phases (melts, solutions, and surface layers on liquids)</topic><topic>Materials science</topic><topic>Methods of deposition of films and coatings; film growth and epitaxy</topic><topic>Pb(Zr,Ti)O3</topic><topic>PbTiO3</topic><topic>Physical radiation effects, radiation damage</topic><topic>Physics</topic><topic>Polarization</topic><topic>Structure of solids and liquids; crystallography</topic><topic>Thin films</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Yang, Sun A</creatorcontrib><creatorcontrib>Kim, Byung Hoon</creatorcontrib><creatorcontrib>Lee, Min Ku</creatorcontrib><creatorcontrib>Lee, Gyoung Ja</creatorcontrib><creatorcontrib>Lee, Nam-Ho</creatorcontrib><creatorcontrib>Bu, Sang Don</creatorcontrib><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>Engineered Materials Abstracts</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>METADEX</collection><collection>Technology Research Database</collection><collection>Materials Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Thin solid films</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Yang, Sun A</au><au>Kim, Byung Hoon</au><au>Lee, Min Ku</au><au>Lee, Gyoung Ja</au><au>Lee, Nam-Ho</au><au>Bu, Sang Don</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Gamma-ray irradiation effects on electrical properties of ferroelectric PbTiO3 and Pb(Zr0.52Ti0.48)O3 thin films</atitle><jtitle>Thin solid films</jtitle><date>2014-07-01</date><risdate>2014</risdate><volume>562</volume><spage>185</spage><epage>189</epage><pages>185-189</pages><issn>0040-6090</issn><eissn>1879-2731</eissn><coden>THSFAP</coden><abstract>We investigated gamma-ray irradiation effects on electrical properties of ferroelectric PbTiO3 (PTO) and Pb(Zr0.52Ti0.48)O3 (PZT) thin films. PTO and PZT thin films were prepared on the Pt/Ti/SiO2/Si substrates by using a sol–gel method with a spin-coating process. The prepared PTO and PZT thin films were subjected to gamma radiation with various total doses from 0kGy to 300kGy. There were no noticeable morphological and structural changes in PTO and PZT films before and after irradiation. As a total dose increases up to 300kGy, a larger degradation behavior of electrical properties was observed in the PZT films rather than in the PTO films. About 35% of remanent polarization value decreased for the PZT films, while just 10% of that decreased for the PTO films. Dielectric constant of PZT films decreased much from 850 to 580, but that of the PTO films decreased just a little from 400 to 340. This degradation behavior of polarization and dielectric properties can be explained by the pinning of domain walls by some radiation-induced defects. These results suggest that the PTO films have higher radiation hardness properties than the PZT films.
•Gamma-ray irradiation effects on electrical properties of PbTiO3 and Pb(Zr0.52Ti0.48)O3 films•Radiation-induced defects and degradation of electrical properties•Radiation hardness of PbTiO3 and Pb(Zr0.52Ti0.48)O3 films</abstract><cop>Amsterdam</cop><pub>Elsevier B.V</pub><doi>10.1016/j.tsf.2014.04.038</doi><tpages>5</tpages></addata></record> |
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| subjects | Condensed matter: electronic structure, electrical, magnetic, and optical properties Condensed matter: structure, mechanical and thermal properties Cross-disciplinary physics: materials science rheology Degradation Dielectric constant Dielectric thin films Dielectrics, piezoelectrics, and ferroelectrics and their properties Electrical properties Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures Electronic transport phenomena in thin films and low-dimensional structures Exact sciences and technology Ferroelectric materials Ferroelectricity Gamma-ray Irradiation Lead zirconate titanates Liquid phase epitaxy deposition from liquid phases (melts, solutions, and surface layers on liquids) Materials science Methods of deposition of films and coatings film growth and epitaxy Pb(Zr,Ti)O3 PbTiO3 Physical radiation effects, radiation damage Physics Polarization Structure of solids and liquids crystallography Thin films |
| title | Gamma-ray irradiation effects on electrical properties of ferroelectric PbTiO3 and Pb(Zr0.52Ti0.48)O3 thin films |
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