P-8: High Resolution a-IGZO TFT LCD Panel Fabricated with Lower Annealing Temperature

In this paper, a‐IGZO TFT fabricated with sputtered process and annealed with low temperature is investigated. For all the prcoess, the maximum process temperature is as low as 300°C In addition, a 3.8 inch WVGA AM‐LCD driven by a‐IGZO TFTs is successfully demonstrated.

Bibliographische Detailangaben

Veröffentlicht in:	SID International Symposium Digest of technical papers 2014-06, Vol.45 (1), p.972-974
Hauptverfasser:	Chiang, Shin-Chuan, Chen, Yu-Hsien, LU, Ya-Ju, WU, Der-Chun, Chen, Po-Lung, Tseng, Kuo-Hsing, Lu, Wen-Cheng, Lin, Yi-Hsien, Chen, Ying-Hui, Lid, En-Chih, Wang, Chi-Young, Chang, Hsi-Ming, Kang, Li-Hsin, Huang, Yen-Yu
Format:	Artikel
Sprache:	eng
Schlagworte:	Annealing High resolution IGZO TFT Liquid crystal displays Panels Semiconductor devices Technical papers Thin film transistors
Online-Zugang:	Volltext
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