P.14: Distinguished Poster Paper: Separate Extraction Technique for Intrinsic Donor- and Acceptor-like Density-of-States over Full-Energy Range Sub-Bandgap in Amorphous Oxide Semiconductor Thin Film Transistors by Using One-Shot Monochromatic Photonic Capacitance-Voltage Characteristics

We report an extraction technique based on experimental data for intrinsic donor‐ and acceptor‐like subgap density‐of‐states (DOS) over the full‐energy range (EC

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Bibliographische Detailangaben
Veröffentlicht in:	SID International Symposium Digest of technical papers 2013-06, Vol.44 (1), p.1033-1036
Hauptverfasser:	Bae, Hagyoul, Jun, Sungwoo, Choi, Hyunjun, Jo, Chunhyung, Kim, Yun Hyeok, Hwang, Jun Seok, Ahn, Jaeyeop, Choi, Sung-Jin, Kim, Dae Hwan, Kim, Dong Myong
Format:	Artikel
Sprache:	eng
Schlagworte:	Amorphous oxide semiconductor thin-film transistors Amorphous semiconductors Density of states density-of-states (DOS) donor- and acceptor-like DOS Extraction indium-gallium-zinc-oxide Oxides photonic capacitance-voltage measurement Photonics Semiconductor devices Semiconductors Thin film transistors Thin films
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Beschreibung
Zusammenfassung:	We report an extraction technique based on experimental data for intrinsic donor‐ and acceptor‐like subgap density‐of‐states (DOS) over the full‐energy range (EC
ISSN:	0097-966X 2168-0159
DOI:	10.1002/j.2168-0159.2013.tb06399.x