4.2: Invited Paper: Development of High Mobility Zinc Oxynitride Thin Film Transistors
Possible mechanisms to achieve high mobility in zinc oxynitride (ZnON) have been investigated by comparison with other thin film semiconductors. Integrated processes to fabricate ZnON TFTs have been developed. Issues and challenges encountered at current stage will be discussed.
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| Veröffentlicht in: | SID International Symposium Digest of technical papers 2013-06, Vol.44 (1), p.14-17 |
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| container_issue | 1 |
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| container_title | SID International Symposium Digest of technical papers |
| container_volume | 44 |
| creator | Ye, Yan Lim, Rodney You, Harvey Scheer, Evelyn Gaur, Anshu Hsu, Hao-chien Liu, Jian Yim, Dong Kil Hosokawa, Aki White, John M. |
| description | Possible mechanisms to achieve high mobility in zinc oxynitride (ZnON) have been investigated by comparison with other thin film semiconductors. Integrated processes to fabricate ZnON TFTs have been developed. Issues and challenges encountered at current stage will be discussed. |
| doi_str_mv | 10.1002/j.2168-0159.2013.tb06127.x |
| format | Article |
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| identifier | ISSN: 0097-966X |
| ispartof | SID International Symposium Digest of technical papers, 2013-06, Vol.44 (1), p.14-17 |
| issn | 0097-966X 2168-0159 |
| language | eng |
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| source | Wiley Journals |
| subjects | electron carrier transport Oxynitrides potential barrier Semiconductor devices Semiconductors Technical papers TFT Thin film transistors Thin films Zinc Zinc oxynitride |
| title | 4.2: Invited Paper: Development of High Mobility Zinc Oxynitride Thin Film Transistors |
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