THz emission from argon implanted silicon surfaces

THz emission from semiconductor surfaces is influenced by the sign and strength of the surface field as well as the relaxation dynamics of the photoinduced carriers. In this paper, an experimental study on argon implanted silicon surfaces is presented. Moderately doped silicon wafers were implanted...

Ausführliche Beschreibung

Bibliographische Detailangaben

Veröffentlicht in:	Physica Status Solidi. B: Basic Solid State Physics 2015-01, Vol.252 (1), p.105-111
Hauptverfasser:	Blumröder, Ulrike, Steglich, Martin, Schrempel, Frank, Hoyer, Patrick, Nolte, Stefan
Format:	Artikel
Sprache:	eng
Schlagworte:	Amplitudes Argon Damage Emission Fermi level Fermi level pinning ion implantation Semiconductors Silicon Stems surface field THz emission
Online-Zugang:	Volltext
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!