Fully patterned and low temperature transparent ZnO-based inverters
The fabrication and characterization of transparent logic inverters based on zinc oxide (ZnO) thin film transistors (TFTs) is reported. The inverters are fabricated using standard photolithographic techniques on glass substrates, and the entire fabrication process temperature is maintained 80% in th...
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Veröffentlicht in: | Thin solid films 2013-10, Vol.545, p.458-461 |
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Hauptverfasser: | , , , , , , |
Format: | Artikel |
Sprache: | eng |
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Zusammenfassung: | The fabrication and characterization of transparent logic inverters based on zinc oxide (ZnO) thin film transistors (TFTs) is reported. The inverters are fabricated using standard photolithographic techniques on glass substrates, and the entire fabrication process temperature is maintained 80% in the visible spectrum. The inverters are analyzed with AC input signals at frequencies of 100 and 500Hz. The AC response shows an average rise and fall time transitions of 0.65 and 0.44ms, respectively. Measured inverters delay is in the order of 0.21ms.
•Logic inverters based on zinc oxide thin film transistors.•Inverters fabricated using temperatures below 100°C and standard photolithography.•Transparent aluminum-doped zinc oxide as gate, drain and source electrodes.•Devices with total transmittance in the visible range above 80%.•AC inverter response up to 500Hz. |
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ISSN: | 0040-6090 1879-2731 |
DOI: | 10.1016/j.tsf.2013.07.069 |