Fully patterned and low temperature transparent ZnO-based inverters

The fabrication and characterization of transparent logic inverters based on zinc oxide (ZnO) thin film transistors (TFTs) is reported. The inverters are fabricated using standard photolithographic techniques on glass substrates, and the entire fabrication process temperature is maintained 80% in th...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Veröffentlicht in:Thin solid films 2013-10, Vol.545, p.458-461
Hauptverfasser: Gutierrez-Heredia, G., Mejia, I., Rivas-Aguilar, M.E., Hernandez-Como, N., Martinez-Landeros, V.H., Aguirre-Tostado, F.S., Quevedo-Lopez, M.A.
Format: Artikel
Sprache:eng
Schlagworte:
Online-Zugang:Volltext
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:The fabrication and characterization of transparent logic inverters based on zinc oxide (ZnO) thin film transistors (TFTs) is reported. The inverters are fabricated using standard photolithographic techniques on glass substrates, and the entire fabrication process temperature is maintained 80% in the visible spectrum. The inverters are analyzed with AC input signals at frequencies of 100 and 500Hz. The AC response shows an average rise and fall time transitions of 0.65 and 0.44ms, respectively. Measured inverters delay is in the order of 0.21ms. •Logic inverters based on zinc oxide thin film transistors.•Inverters fabricated using temperatures below 100°C and standard photolithography.•Transparent aluminum-doped zinc oxide as gate, drain and source electrodes.•Devices with total transmittance in the visible range above 80%.•AC inverter response up to 500Hz.
ISSN:0040-6090
1879-2731
DOI:10.1016/j.tsf.2013.07.069